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Grant 8,326,244 - Maruhashi , et al. December 4, 2 | 2012-12-04 |
Radio communication device
Grant 7,924,799 - Maruhashi , et al. April 12, 2 | 2011-04-12 |
Field effect transistor
Grant 7,863,648 - Miyamoto , et al. January 4, 2 | 2011-01-04 |
Field effect transistor
Grant 7,800,131 - Miyamoto , et al. September 21, 2 | 2010-09-21 |
Power Amplifier, And Method Of Controlling Power Amplifier
App 20100225399 - Maruhashi; Kenichi ; et al. | 2010-09-09 |
Field effect transistor
App 20090230430 - Miyamoto; Hironobu ; et al. | 2009-09-17 |
Field effect transistor
App 20090230429 - Miyamoto; Hironobu ; et al. | 2009-09-17 |
Radio communication device
App 20070133493 - Maruhashi; Kenichi ; et al. | 2007-06-14 |
Semiconductor device and method of manufacturing the same
Grant 7,038,244 - Ishigaki , et al. May 2, 2 | 2006-05-02 |
Heterojunction bipolar transistor and method of producing the same
Grant 6,924,201 - Tanomura , et al. August 2, 2 | 2005-08-02 |
Semiconductor device and method of manufacturing the same
App 20050110045 - Ishigaki, Takashi ; et al. | 2005-05-26 |
Heterojunction bipolar transistor and semiconductor integrated circuit device using the same
Grant 6,881,988 - Niwa , et al. April 19, 2 | 2005-04-19 |
Semiconductor device and method of producing the same
Grant 6,661,038 - Azuma , et al. December 9, 2 | 2003-12-09 |
Heterojunction bipolar transistor and method of producing the same
App 20030218187 - Tanomura, Masahiro ; et al. | 2003-11-27 |
Heterojunction bipolar transistor and semiconductor integrated circuit device using the same
App 20030136956 - Niwa, Takaki ; et al. | 2003-07-24 |
Compound semiconductor device having diode connected between emitter and collector of bipolar transistor
Grant 6,525,388 - Shimawaki February 25, 2 | 2003-02-25 |
Compound semiconductor device having heterojunction bipolar transister and other component integrated together and process for fabrication thereof
App 20020195620 - Tanomura, Masahiro ; et al. | 2002-12-26 |
Compound semiconductor device having heterojunction bipolar transistor reduced in collector contact resistance by delta-doped region and process for fabrication thereof
App 20020139997 - Tanomura, Masahiro ; et al. | 2002-10-03 |
Semiconductor device and method of producing the same
App 20020121675 - Azuma, Kouji ; et al. | 2002-09-05 |
Heterojunction bipolar transistor and method of producing the same
App 20020066909 - Tanomura, Masahiro ; et al. | 2002-06-06 |
Heterojunction bipolar transistor composed of emitter layer which includes orderly structured layer and disorderly structured layer
App 20010048120 - Shimawaki, Hidenori | 2001-12-06 |
Bipolar transistor including a compound semiconductor
Grant 5,903,018 - Shimawaki May 11, 1 | 1999-05-11 |
Heterojunction bipolar transistor having base structure for improving both cut-off frequency and maximum oscillation frequency
Grant 5,321,302 - Shimawaki June 14, 1 | 1994-06-14 |
Method of selective epitaxial growth for compound semiconductors
Grant 4,902,643 - Shimawaki February 20, 1 | 1990-02-20 |
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