SHI; Yongjun

Patent Applications and Registrations

Patent applications and USPTO patent grants for SHI; Yongjun.The latest application filed is for "three-stage tubular t-shaped degassing device with microbubble axial flow and spiral flow fields".

Company Profile

20.13.12

SHI; Yongjun - Qingdao City CN
Shi; Yongjun - Clifton Park NY
Shi; Yongjun - Shanghai CN

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Three-stage Tubular T-shaped Degassing Device With Microbubble Axial Flow And Spiral Flow Fields App 20220219100 - LIU; Xinfu ; et al.	2022-07-14
Preventing dielectric void over trench isolation region Grant 11,171,036 - Shi , et al. November 9, 2	2021-11-09
Microservice update system Grant 11,093,232 - Marechal , et al. August 17, 2	2021-08-17
Preventing Dielectric Void Over Trench Isolation Region App 20210111065 - Shi; Yongjun ; et al.	2021-04-15
STI structure with liner along lower portion of longitudinal sides of active region, and related FET and method Grant 10,910,276 - Shi , et al. February 2, 2	2021-02-02
Microservice Update System App 20200348921 - Marechal; Marc Marcel Rene ; et al.	2020-11-05
Self-aligned chamferless interconnect structures of semiconductor devices Grant 10,804,199 - Shi , et al. October 13, 2	2020-10-13
Apparatus and method for improving messaging system reliability Grant 10,742,359 - Tang , et al. A	2020-08-11
Method, device and computer program product for storing data Grant 10,712,959 - Shi , et al.	2020-07-14
Fin-type transistors with spacers on the gates Grant 10,636,894 - Shen , et al.	2020-04-28
Self-aligned Chamferless Interconnect Structures Of Semiconductor Devices App 20200098688 - SHI; YONGJUN ; et al.	2020-03-26
Apparatus And Method For Improving Messaging System Reliability App 20200076539 - Tang; Wenyu ; et al.	2020-03-05
Field-effect Transistors With Improved Dielectric Gap Fill App 20200043779 - Hong; Wei ; et al.	2020-02-06
Field-effect transistors with improved dielectric gap fill Grant 10,546,775 - Hong , et al. Ja	2020-01-28
Epitaxial region for embedded source/drain region having uniform thickness Grant 10,461,155 - Yong , et al. Oc	2019-10-29
Fin-type Transistors With Spacers On The Gates App 20190280105 - Shen; Yanping ; et al.	2019-09-12
Method, Device And Computer Program Product For Storing Data App 20190220208 - Shi; Yongjun ; et al.	2019-07-18
Dual-curvature Cavity For Epitaxial Semiconductor Growth App 20190181243 - Vinslava; Alina ; et al.	2019-06-13
Dual-curvature cavity for epitaxial semiconductor growth Grant 10,297,675 - Vinslava , et al.	2019-05-21
Epitaxial Region For Embedded Source/drain Region Having Uniform Thickness App 20190148492 - Yong; Yoong Hooi ; et al.	2019-05-16
Dual-curvature Cavity For Epitaxial Semiconductor Growth App 20190131433 - Vinslava; Alina ; et al.	2019-05-02
Method Of Forming Vertical Field Effect Transistors With Different Gate Lengths And A Resulting Structure App 20190103319 - Qi; Yi ; et al.	2019-04-04
Method of forming vertical field effect transistors with different gate lengths and a resulting structure Grant 10,249,538 - Qi , et al.	2019-04-02
Finfet diffusion break having protective liner in fin insulator Grant 10,164,010 - Hong , et al. Dec	2018-12-25
Integrated circuit structure incorporating non-planar field effect transistors with different channel region heights and method Grant 10,068,902 - Shen , et al. September 4, 2	2018-09-04

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