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Shi; Erwei Patent Filings

Shi; Erwei

Patent Applications and Registrations

Patent applications and USPTO patent grants for Shi; Erwei.The latest application filed is for "crucible for crystal growth as well as method for releasing thermal stress in silicon carbide crystal".

Company Profile
2.5.4
  • Shi; Erwei - Shanghai CN
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Crucible for crystal growth as well as method for releasing thermal stress in silicon carbide crystal
Grant 11,384,451 - Gao , et al. July 12, 2
2022-07-12
Crucible For Crystal Growth As Well As Method For Releasing Thermal Stress In Silicon Carbide Crystal
App 20200354856 - GAO; Pan ;   et al.
2020-11-12
Controllable splitting method for high current pulse and apparatus therefor
Grant 10,651,833 - Huang , et al.
2020-05-12
Controllable Splitting Method For High Current Pulse And Apparatus Therefor
App 20190296721 - Huang; Wei ;   et al.
2019-09-26
High-temperature test fixture
Grant 10,215,798 - Tu , et al. Feb
2019-02-26
High-Temperature Test Fixture
App 20170160336 - Tu; Xiaoniu ;   et al.
2017-06-08
Apparatus with two-chamber structure for growing silicon carbide crystals
Grant 9,228,275 - Chen , et al. January 5, 2
2016-01-05
Apparatus with Two-Chamber Structure for Growing Silicon Carbide Crystals
App 20120192790 - Chen; Zhizhan ;   et al.
2012-08-02

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