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Patent applications and USPTO patent grants for Shi; Erwei.The latest application filed is for "crucible for crystal growth as well as method for releasing thermal stress in silicon carbide crystal".
Patent | Date |
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Crucible for crystal growth as well as method for releasing thermal stress in silicon carbide crystal Grant 11,384,451 - Gao , et al. July 12, 2 | 2022-07-12 |
Crucible For Crystal Growth As Well As Method For Releasing Thermal Stress In Silicon Carbide Crystal App 20200354856 - GAO; Pan ;   et al. | 2020-11-12 |
Controllable splitting method for high current pulse and apparatus therefor Grant 10,651,833 - Huang , et al. | 2020-05-12 |
Controllable Splitting Method For High Current Pulse And Apparatus Therefor App 20190296721 - Huang; Wei ;   et al. | 2019-09-26 |
High-temperature test fixture Grant 10,215,798 - Tu , et al. Feb | 2019-02-26 |
High-Temperature Test Fixture App 20170160336 - Tu; Xiaoniu ;   et al. | 2017-06-08 |
Apparatus with two-chamber structure for growing silicon carbide crystals Grant 9,228,275 - Chen , et al. January 5, 2 | 2016-01-05 |
Apparatus with Two-Chamber Structure for Growing Silicon Carbide Crystals App 20120192790 - Chen; Zhizhan ;   et al. | 2012-08-02 |
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