Sheppard; Scott Thomas

Patent Applications and Registrations

Patent applications and USPTO patent grants for Sheppard; Scott Thomas.The latest application filed is for "semiconductor die with improved ruggedness".

Company Profile

4.14.12

Sheppard; Scott Thomas - Chapel Hill NC
Sheppard; Scott Thomas - Carrboro NC

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor Die With Improved Ruggedness App 20210043530 - Hardiman; Chris ; et al.	2021-02-11
Semiconductor die with improved ruggedness Grant 10,886,189 - Hardiman , et al. January 5, 2	2021-01-05
Semiconductor die with improved ruggedness Grant 10,840,162 - Hardiman , et al. November 17, 2	2020-11-17
Semiconductor Die With Improved Ruggedness App 20190259682 - Hardiman; Chris ; et al.	2019-08-22
Method of forming vias in silicon carbide and resulting devices and circuits Grant 10,367,074 - Ring , et al. July 30, 2	2019-07-30
Semiconductor die with improved ruggedness Grant 10,332,817 - Hardiman , et al.	2019-06-25
Semiconductor Die With Improved Ruggedness App 20190172769 - Hardiman; Chris ; et al.	2019-06-06
Stress mitigation for thin and thick films used in semiconductor circuitry Grant 9,934,983 - Ring , et al. April 3, 2	2018-04-03
Method Of Forming Vias In Silicon Carbide And Resulting Devices And Circuits App 20170012106 - Ring; Zoltan ; et al.	2017-01-12
Method of forming vias in silicon carbide and resulting devices and circuits Grant 9,490,169 - Ring , et al. November 8, 2	2016-11-08
Stress Mitigation For Thin And Thick Films Used In Semiconductor Circuitry App 20150221574 - Ring; Zoltan ; et al.	2015-08-06
Method of forming vias in silicon carbide and resulting devices and circuits Grant 8,202,796 - Ring , et al. June 19, 2	2012-06-19
Method Of Forming Vias In Silicon Carbide And Resulting Devices And Circuits App 20110165771 - Ring; Zoltan ; et al.	2011-07-07
Method Of Forming Vias In Silicon Carbide And Resulting Devices And Circuits App 20110108855 - Ring; Zoltan ; et al.	2011-05-12
Method of forming vias in silicon carbide and resulting devices and circuits Grant 7,892,974 - Ring , et al. February 22, 2	2011-02-22
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides Grant 7,858,460 - Ring , et al. December 28, 2	2010-12-28
Passivation of Wide Band-Gap Based Semiconductor Devices with Hydrogen-Free Sputtered Nitrides App 20090215280 - Ring; Zoltan ; et al.	2009-08-27
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides Grant 7,525,122 - Ring , et al. April 28, 2	2009-04-28
Method of Forming Vias in Silicon Carbide and Resulting Devices and Circuits App 20090104738 - Ring; Zoltan ; et al.	2009-04-23
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides App 20070001174 - Ring; Zoltan ; et al.	2007-01-04
Nitride based transistors on semi-insulating silicon carbide substrates App 20030201459 - Sheppard, Scott Thomas ; et al.	2003-10-30
Nitride based transistors on semi-insulating silicon carbide substrates Grant 6,583,454 - Sheppard , et al. June 24, 2	2003-06-24
Nitride based transistors on semi-insulating silicon carbide substrates Grant 6,486,502 - Sheppard , et al. November 26, 2	2002-11-26
Nitride based transistors on semi-insulating silicon carbide substrates Grant 6,316,793 - Sheppard , et al. November 13, 2	2001-11-13
Nitride based transistors on semi-insulating silicon carbide substrates App 20010017370 - Sheppard, Scott Thomas ; et al.	2001-08-30

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