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name:-0.043025016784668
name:-0.053483009338379
name:-0.13061213493347
Shen; Dongna Patent Filings

Shen; Dongna

Patent Applications and Registrations

Patent applications and USPTO patent grants for Shen; Dongna.The latest application filed is for "mtj cd variation by hm trimming".

Company Profile
54.46.44
  • Shen; Dongna - San Jose CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-deposition
Grant 11,444,241 - Yang , et al. September 13, 2
2022-09-13
Sub 60nm etchless MRAM devices by ion beam etching fabricated t-shaped bottom electrode
Grant 11,430,947 - Yang , et al. August 30, 2
2022-08-30
Post treatment to reduce shunting devices for physical etching process
Grant 11,424,405 - Wang , et al. August 23, 2
2022-08-23
Silicon oxynitride based encapsulation layer for magnetic tunnel junctions
Grant 11,411,174 - Sundar , et al. August 9, 2
2022-08-09
Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage
Grant 11,316,103 - Shen , et al. April 26, 2
2022-04-26
Method to integrate MRAM devices to the interconnects of 30nm and beyond CMOS technologies
Grant 11,289,645 - Yang , et al. March 29, 2
2022-03-29
Ion beam etching fabricated sub 30nm Vias to reduce conductive material re-deposition for sub 60nm MRAM devices
Grant 11,217,746 - Yang , et al. January 4, 2
2022-01-04
MTJ CD Variation By HM Trimming
App 20210359202 - Shen; Dongna ;   et al.
2021-11-18
Multiple spacer assisted physical etching of sub 60nm MRAM devices
Grant 11,145,809 - Yang , et al. October 12, 2
2021-10-12
Under-Cut Via Electrode for Sub 60nm Etchless MRAM Devices by Decoupling the Via Etch Process
App 20210288241 - Yang; Yi ;   et al.
2021-09-16
Large height tree-like sub 30nm vias to reduce conductive material re-deposition for sub 60nm MRAM devices
Grant 11,121,314 - Yang , et al. September 14, 2
2021-09-14
Highly selective ion beam etch hard mask for sub 60nm MRAM devices
Grant 11,088,321 - Yang , et al. August 10, 2
2021-08-10
MTJ CD variation by HM trimming
Grant 11,081,642 - Shen , et al. August 3, 2
2021-08-03
Highly Physical Ion Resistive Spacer to Define Chemical Damage Free Sub 60nm MRAM Devices
App 20210217951 - Yang; Yi ;   et al.
2021-07-15
Ion beam etching process design to minimize sidewall re-deposition
Grant 11,043,632 - Sundar , et al. June 22, 2
2021-06-22
Reduce intermixing on MTJ sidewall by oxidation
Grant 11,031,548 - Shen , et al. June 8, 2
2021-06-08
Under-cut via electrode for sub 60 nm etchless MRAM devices by decoupling the via etch process
Grant 11,024,797 - Yang , et al. June 1, 2
2021-06-01
Highly Physical Etch Resistive Photoresist Mask To Define Large Height Sub 30nm Via And Metal Hard Mask For Mram Devices
App 20210151668 - YANG; Yi ;   et al.
2021-05-20
Etching and Encapsulation Scheme for Magnetic Tunnel Junction Fabrication
App 20210143322 - Sundar; Vignesh ;   et al.
2021-05-13
Sub 60nm Etchless MRAM Devices by Ion Beam Etching Fabricated T-Shaped Bottom Electrode
App 20210135099 - Yang; Yi ;   et al.
2021-05-06
Reduce Intermixing on MTJ Sidewall by Oxidation
App 20210135097 - Shen; Dongna ;   et al.
2021-05-06
Novel Integration Scheme for Three Terminal Spin-Orbit-Torque (SOT) Switching Devices
App 20210104663 - Haq; Jesmin ;   et al.
2021-04-08
Self-Aligned Encapsulation Hard Mask To Separate Physically Under-Etched MTJ Cells To Reduce Conductive R-Deposition
App 20210098696 - Yang; Yi ;   et al.
2021-04-01
Highly physical ion resistive spacer to define chemical damage free sub 60nm MRAM devices
Grant 10,964,887 - Yang , et al. March 30, 2
2021-03-30
Ion Beam Etching Process Design to Minimize Sidewall Re-Deposition
App 20210083180 - Sundar; Vignesh ;   et al.
2021-03-18
Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformity
Grant 10,921,707 - Yang , et al. February 16, 2
2021-02-16
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Magnetic Tunnel Junctions
App 20210020831 - Patel; Sahil ;   et al.
2021-01-21
Highly physical etch resistive photoresist mask to define large height sub 30nm via and metal hard mask for MRAM devices
Grant 10,886,461 - Yang , et al. January 5, 2
2021-01-05
Multiple Spacer Assisted Physical Etching of Sub 60nm MRAM Devices
App 20200411753 - Yang; Yi ;   et al.
2020-12-31
Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-deposition
Grant 10,868,237 - Yang , et al. December 15, 2
2020-12-15
Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode
Grant 10,868,242 - Yang , et al. December 15, 2
2020-12-15
Large Height Tree-Like Sub 30nm Vias to Reduce Conductive Material Re-Deposition for Sub 60nm MRAM Devices
App 20200343443 - Yang; Yi ;   et al.
2020-10-29
Post Treatment to Reduce Shunting Devices for Physical Etching Process
App 20200328345 - Wang; Yu-Jen ;   et al.
2020-10-15
Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions
Grant 10,797,232 - Patel , et al. October 6, 2
2020-10-06
Ion Beam Etching Fabricated Sub 30nm Vias to Reduce Conductive Material Re-Deposition for Sub 60nm MRAM Devices
App 20200303636 - Yang; Yi ;   et al.
2020-09-24
Multiple spacer assisted physical etching of sub 60nm MRAM devices
Grant 10,770,654 - Yang , et al. Sep
2020-09-08
MTJ patterning without etch induced device degradation assisted by hard mask trimming
Grant 10,756,137 - Yang , et al. A
2020-08-25
Large height tree-like sub 30nm vias to reduce conductive material re-deposition for sub 60nm MRAM devices
Grant 10,714,680 - Yang , et al.
2020-07-14
Method to Integrate MRAM Devices to the Interconnects of 30nm and Beyond CMOS Technologies
App 20200212297 - Yang; Yi ;   et al.
2020-07-02
Post treatment to reduce shunting devices for physical etching process
Grant 10,700,269 - Wang , et al.
2020-06-30
MTJ Patterning without Etch Induced Device Degradation Assisted by Hard Mask Trimming
App 20200185454 - Yang; Yi ;   et al.
2020-06-11
Ion beam etching fabricated sub 30nm vias to reduce conductive material re-deposition for sub 60nm MRAM devices
Grant 10,680,168 - Yang , et al.
2020-06-09
Mtj Cd Variation By Hm Trimming
App 20200144493 - Shen; Dongna ;   et al.
2020-05-07
Combined Physical And Chemical Etch To Reduce Magnetic Tunnel Junction (mtj) Sidewall Damage
App 20200144492 - Shen; Dongna ;   et al.
2020-05-07
Highly Selective Ion Beam Etch Hard Mask for Sub 60nm MRAM Devices
App 20200136031 - Yang; Yi ;   et al.
2020-04-30
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Magnetic Tunnel Junctions
App 20200136025 - Patel; Sahil ;   et al.
2020-04-30
Under-Cut Via Electrode for Sub 60nm Etchless MRAM Devices by Decoupling the Via Etch Process
App 20200136021 - Yang; Yi ;   et al.
2020-04-30
Silicon Oxynitride Based Encapsulation Layer for Magnetic Tunnel Junctions
App 20200127192 - Sundar; Vignesh ;   et al.
2020-04-23
Multiple Spacer Assisted Physical Etching of Sub 60nm MRAM Devices
App 20200119264 - Yang; Yi ;   et al.
2020-04-16
Highly Physical Etch Resistive Photoresist Mask to Define Large Height Sub 30nm Via and Metal Hard Mask for MRAM Devices
App 20200091419 - Yang; Yi ;   et al.
2020-03-19
Self-Aligned Encapsulation Hard Mask to Separate Physically Under-Etched MTJ Cells to Reduce Conductive R-Deposition
App 20200066972 - Yang; Yi ;   et al.
2020-02-27
Large Height Tree-Like Sub 30nm Vias to Reduce Conductive Material Re-Deposition for Sub 60nm MRAM Devices
App 20200066973 - Yang; Yi ;   et al.
2020-02-27
Avoiding Oxygen Plasma Damage During Hard Mask Etching in Magnetic Tunnel Junction (MTJ) Fabrication Process
App 20200052196 - Shen; Dongna ;   et al.
2020-02-13
Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage
Grant 10,522,749 - Shen , et al. Dec
2019-12-31
MTJ CD variation by HM trimming
Grant 10,522,751 - Shen , et al. Dec
2019-12-31
Highly selective ion beam etch hard mask for sub 60nm MRAM devices
Grant 10,522,753 - Yang , et al. Dec
2019-12-31
Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions
Grant 10,522,745 - Patel , et al. Dec
2019-12-31
Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch process
Grant 10,522,741 - Yang , et al. Dec
2019-12-31
Multiple spacer assisted physical etching of sub 60nm MRAM devices
Grant 10,516,102 - Yang , et al. Dec
2019-12-24
Silicon oxynitride based encapsulation layer for magnetic tunnel junctions
Grant 10,516,100 - Sundar , et al. Dec
2019-12-24
Under-Cut Via Electrode for Sub 60nm Etchless MRAM Devices by Decoupling the Via Etch Process
App 20190386201 - Yang; Yi ;   et al.
2019-12-19
Sub 60nm Etchless MRAM Devices by Ion Beam Etching Fabricated T-Shaped Bottom Electrode
App 20190386211 - Yang; Yi ;   et al.
2019-12-19
Highly Physical Ion Resistive Spacer to Define Chemical Damage Free Sub 60nm MRAM Devices
App 20190363249 - Yang; Yi ;   et al.
2019-11-28
Mtj Cd Variation By Hm Trimming
App 20190363248 - Shen; Dongna ;   et al.
2019-11-28
Highly Selective Ion Beam Etch Hard Mask for Sub 60nm MRAM Devices
App 20190348601 - Yang; Yi ;   et al.
2019-11-14
Self-Adaptive Halogen Treatment to Improve Photoresist Pattern and Magnetoresistive Random Access Memory (MRAM) Device Uniformit
App 20190339616 - Yang; Yi ;   et al.
2019-11-07
Ion Beam Etching Fabricated Sub 30nm Vias to Reduce Conductive Material Re-Deposition for Sub 60nm MRAM Devices
App 20190312197 - Yang; Yi ;   et al.
2019-10-10
Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode
Grant 10,418,547 - Yang , et al. Sept
2019-09-17
Post Treatment to Reduce Shunting Devices for Physical Etching Process
App 20190280197 - Wang; Yu-Jen ;   et al.
2019-09-12
Highly selective ion beam etch hard mask for sub 60nm MRAM devices
Grant 10,388,862 - Yang , et al. A
2019-08-20
Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformity
Grant 10,359,699 - Yang , et al.
2019-07-23
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Magnetic Tunnel Junctions
App 20190189910 - Patel; Sahil ;   et al.
2019-06-20
Post treatment to reduce shunting devices for physical etching process
Grant 10,297,746 - Wang , et al.
2019-05-21
Self-Adaptive Halogen Treatment to Improve Photoresist Pattern and Magnetoresistive Random Access Memory (MRAM) Device Uniformity
App 20190064661 - Yang; Yi ;   et al.
2019-02-28
Silicon Oxynitride Based Encapsulation Layer for Magnetic Tunnel Junctions
App 20180358545 - Sundar; Vignesh ;   et al.
2018-12-13
Magnetic tunnel junction (MTJ) performance by introducing oxidants to methanol with or without noble gas during MTJ etch
Grant 10,153,427 - Shen , et al. Dec
2018-12-11
Free layer sidewall oxidation and spacer assisted magnetic tunnel junction (MTJ) etch for high performance magnetoresistive random access memory (MRAM) devices
Grant 10,134,981 - Yang , et al. November 20, 2
2018-11-20
Combined Physical and Chemical Etch to Reduce Magnetic Tunnel Junction (MTJ) Sidewall Damage
App 20180331279 - Shen; Dongna ;   et al.
2018-11-15
Post Treatment to Reduce Shunting Devices for Physical Etching Process
App 20180294405 - Wang; Yu-Jen ;   et al.
2018-10-11
Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching
Grant 10,043,851 - Shen , et al. August 7, 2
2018-08-07
High temperature volatilization of sidewall materials from patterned magnetic tunnel junctions
Grant 10,038,138 - Patel , et al. July 31, 2
2018-07-31
MTJ device process/integration method with pre-patterned seed layer
Grant 9,972,777 - Haq , et al. May 15, 2
2018-05-15
Dielectric encapsulation layer for magnetic tunnel junction (MTJ) devices using radio frequency (RF) sputtering
Grant 9,935,261 - Patel , et al. April 3, 2
2018-04-03
MTJ etching with improved uniformity and profile by adding passivation step
Grant 9,887,350 - Shen , et al. February 6, 2
2018-02-06
Spacer assisted ion beam etching of spin torque magnetic random access memory
Grant 9,871,195 - Yang , et al. January 16, 2
2018-01-16
Method to minimize MTJ sidewall damage and bottom electrode redeposition using IBE trimming
Grant 9,660,177 - Annapragada , et al. May 23, 2
2017-05-23
Hybrid metallic hard mask stack for MTJ etching
Grant 9,608,200 - Shen , et al. March 28, 2
2017-03-28
Method to Minimize MTJ Sidewall Damage and Bottom Electrode Redeposition Using IBE Trimming
App 20170069834 - Annapragada; Rao ;   et al.
2017-03-09
MTJ Etching with Improved Uniformity and Profile by Adding Passivation Step
App 20160351798 - Shen; Dongna ;   et al.
2016-12-01
Hybrid Metallic Hard Mask Stack for MTJ Etching
App 20160284985 - Shen; Dongna ;   et al.
2016-09-29

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