loadpatents
name:-0.011398077011108
name:-0.024508953094482
name:-0.0017478466033936
Shen; Chi-Cheong Patent Filings

Shen; Chi-Cheong

Patent Applications and Registrations

Patent applications and USPTO patent grants for Shen; Chi-Cheong.The latest application filed is for "semiconductor varactor with reduced parasitic resistance".

Company Profile
0.11.6
  • Shen; Chi-Cheong - Richardson TX
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor Varactor With Reduced Parasitic Resistance
App 20100244138 - Benaissa; Kamel ;   et al.
2010-09-30
Semiconductor varactor with reduced parasitic resistance
App 20060192268 - Benaissa; Kamel ;   et al.
2006-08-31
Semiconductor varactor with reduced parasitic resistance
Grant 7,053,465 - Benaissa , et al. May 30, 2
2006-05-30
Integrated circuit with bonding layer over active circuitry
Grant 6,683,380 - Efland , et al. January 27, 2
2004-01-27
Integrated circuit with bonding layer over active circuitry
App 20030036256 - Efland, Taylor R. ;   et al.
2003-02-20
Method for making high gain bipolar transistors in CMOS process
App 20020084494 - Benaissa, Kamel ;   et al.
2002-07-04
Semiconductor varactor with reduced parasitic resistance
App 20020074589 - Benaissa, Kamel ;   et al.
2002-06-20
High gain bipolar junction transistor with counterdoped base in CMOS technology
App 20020058373 - Shen, Chi-Cheong ;   et al.
2002-05-16
Integrated circuit with bonding layer over active circuitry
Grant 6,144,100 - Shen , et al. November 7, 2
2000-11-07
Method of forming a lift-off layer having controlled adhesion strength
Grant 5,944,975 - Wilson , et al. August 31, 1
1999-08-31
Method for fabricating field emission device metallization
Grant 5,601,466 - Shen , et al. February 11, 1
1997-02-11
Field emission device metallization including titanium tungsten and aluminum
Grant 5,594,297 - Shen , et al. January 14, 1
1997-01-14
Method for fabricating a field emission device having black matrix SOG as an interlevel dielectric
Grant 5,577,943 - Vickers , et al. November 26, 1
1996-11-26
Method of making a field emission device anode plate having an integrated getter
Grant 5,520,563 - Wallace , et al. May 28, 1
1996-05-28
Monolithic integration of microwave silicon devices and low loss transmission lines
Grant 5,457,068 - Malhi , et al. October 10, 1
1995-10-10
Anode plate for flat panel display having integrated getter
Grant 5,453,659 - Wallace , et al. September 26, 1
1995-09-26
Silicon-on-insulator integrated circuits and method
Grant 4,875,086 - Malhi , et al. October 17, 1
1989-10-17

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