SHEALY; James R.

Patent Applications and Registrations

Patent applications and USPTO patent grants for SHEALY; James R..The latest application filed is for "vertical field effect transistor device and method of fabrication".

Company Profile

0.16.7

SHEALY; James R. - Ithaca NY
Shealy; James R. - Clifton Park NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Vertical Field Effect Transistor Device And Method Of Fabrication App 20220140130 - SHEALY; James R. ; et al.	2022-05-05
Vertical field effect transistor device and method of fabrication Grant 11,251,295 - Shealy , et al. February 15, 2	2022-02-15
Method for forming III-V semiconductor structures including aluminum-silicon nitride passivation Grant 9,991,360 - Shealy , et al. June 5, 2	2018-06-05
III-V semiconductor structures including aluminum-silicon nitride passivation Grant 9,306,050 - Shealy , et al. April 5, 2	2016-04-05
Gated III-V semiconductor structure and method Grant 9,299,821 - Shealy , et al. March 29, 2	2016-03-29
Chemical vapor deposition process for aluminum silicon nitride Grant 8,791,034 - Shealy , et al. July 29, 2	2014-07-29
Gated Iii-v Semiconductor Structure And Method App 20130153963 - Shealy; James R. ; et al.	2013-06-20
Method For Forming Iii-v Semiconductor Structures Including Aluminum-silicon Nitride Passivation App 20120156836 - Shealy; James R. ; et al.	2012-06-21
Iii-v Semiconductor Structures Including Aluminum-silicon Nitride Passivation App 20120153301 - Shealy; James R. ; et al.	2012-06-21
Chemical Vapor Deposition Process For Aluminum Silicon Nitride App 20120156895 - Shealy; James R. ; et al.	2012-06-21
Single step, high temperature nucleation process for a lattice mismatched substrate Grant 7,250,360 - Shealy , et al. July 31, 2	2007-07-31
Single step, high temperature nucleation process for a lattice mismatched substrate App 20060199364 - Shealy; James R. ; et al.	2006-09-07
Single step process for epitaxial lateral overgrowth of nitride based materials Grant 6,478,871 - Shealy , et al. November 12, 2	2002-11-12
Process for synthesis of cubic GaN on GaAs using NH.sub.3 in an RF plasma process Grant 5,834,379 - Shealy , et al. November 10, 1	1998-11-10
High power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (.lambda.-658 nm) laser Grant 5,003,548 - Bour , et al. March 26, 1	1991-03-26
Method and apparatus for improved gettering for reactant gases Grant 4,564,509 - Shealy , et al. January 14, 1	1986-01-14
Vertical channel field effect transistor Grant 4,343,015 - Baliga , et al. August 3, 1	1982-08-03
Vertical field effect transistor with improved gate and channel structure Grant 4,262,296 - Shealy , et al. April 14, 1	1981-04-14

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