Shamanna; Vinayak

Patent Applications and Registrations

Patent applications and USPTO patent grants for Shamanna; Vinayak.The latest application filed is for "integrated assemblies, and methods of forming integrated assemblies".

Company Profile

7.8.12

Shamanna; Vinayak - Boise ID

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Integrated Assemblies, and Methods of Forming Integrated Assemblies App 20220293631 - Shamanna; Vinayak ; et al.	2022-09-15
Integrated assemblies, and methods of forming integrated assemblies Grant 11,380,705 - Shamanna , et al. July 5, 2	2022-07-05
Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells App 20220157844 - Barclay; M. Jared ; et al.	2022-05-19
Integrated Structures Including Material Containing Silicon, Nitrogen, and at Least One of Carbon, Oxygen, Boron and Phosphorus App 20220115401 - Dorhout; Justin B. ; et al.	2022-04-14
Methods used in forming a memory array comprising strings of memory cells Grant 11,271,002 - Barclay , et al. March 8, 2	2022-03-08
Integrated Assemblies and Methods of Forming Integrated Assemblies App 20220045075 - Greenlee; Jordan D. ; et al.	2022-02-10
Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus Grant 11,239,252 - Dorhout , et al. February 1, 2	2022-02-01
Integrated Assemblies, and Methods of Forming Integrated Assemblies App 20210249433 - Shamanna; Vinayak ; et al.	2021-08-12
Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells App 20200328222 - Barclay; M. Jared ; et al.	2020-10-15
Integrated Structures Including Material Containing Silicon, Nitrogen, and at Least One of Carbon, Oxygen, Boron and Phosphorus App 20200321352 - Dorhout; Justin B. ; et al.	2020-10-08
Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor Grant 10,727,242 - Dorhout , et al.	2020-07-28
Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus Grant 10,720,446 - Dorhout , et al.	2020-07-21
Methods Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells Comprising A Programmable Charge Storage Transist App 20190229127 - Dorhout; Justin B. ; et al.	2019-07-25
Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor Grant 10,263,007 - Dorhout , et al.	2019-04-16
Integrated Structures Including Material Containing Silicon, Nitrogen, and at Least One of Carbon, Oxygen, Boron and Phosphorus App 20190043890 - Dorhout; Justin B. ; et al.	2019-02-07
Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus Grant 10,157,933 - Dorhout , et al. Dec	2018-12-18
Methods Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells Comprising A Programmable Charge Storage Transistor And Arrays Of Elevationally-Extending Strings Of Memory Cells Comprising A Programmable Charge Storage Transistor App 20180286879 - Dorhout; Justin B. ; et al.	2018-10-04
Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor Grant 10,014,309 - Dorhout , et al. July 3, 2	2018-07-03
Methods Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells Comprising A Programmable Charge Storage Transistor And Arrays Of Elevationally-Extending Strings Of Memory Cells Comprising A Programmable Charge Storage Transistor App 20180047739 - Dorhout; Justin B. ; et al.	2018-02-15
Integrated Structures Including Material Containing Silicon, Nitrogen, and at Least One of Carbon, Oxygen, Boron and Phosphorus App 20170301685 - Dorhout; Justin B. ; et al.	2017-10-19

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