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Patent applications and USPTO patent grants for Seshadri; Indira Priyavarshini.The latest application filed is for "structure and method for equal substrate to channel height between n and p fin-fets".
Patent | Date |
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Structure and method for equal substrate to channel height between N and P fin-FETs Grant 11,043,494 - Clevenger , et al. June 22, 2 | 2021-06-22 |
Structure And Method For Equal Substrate To Channel Height Between N And P Fin-fets App 20190326289 - CLEVENGER; Lawrence A. ;   et al. | 2019-10-24 |
Structure and method for equal substrate to channel height between N and P fin-FETs Grant 10,381,348 - Clevenger , et al. A | 2019-08-13 |
Structure And Method For Equal Substrate To Channel Height Between N And P Fin-fets App 20180197858 - CLEVENGER; Lawrence A. ;   et al. | 2018-07-12 |
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