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Patent applications and USPTO patent grants for Senoh; Masayuki.The latest application filed is for "nitride semiconductor device".
Patent | Date |
---|---|
Nitride semiconductor light-emitting devices Grant 8,541,794 - Nagahama , et al. September 24, 2 | 2013-09-24 |
Nitride Semiconductor Device App 20100025657 - NAGAHAMA; Shinichi ;   et al. | 2010-02-04 |
Superlattice nitride semiconductor LD device Grant 7,615,804 - Nagahama , et al. November 10, 2 | 2009-11-10 |
Gallium nitride based III-V group compound semiconductor device and method of producing the same Grant 7,375,383 - Nakamura , et al. May 20, 2 | 2008-05-20 |
Gallium nitride based III-V group compund semiconductor device and method of producing the same App 20070178689 - Nakamura; Shuji ;   et al. | 2007-08-02 |
Nitride semiconductor device Grant 7,211,822 - Nagahama , et al. May 1, 2 | 2007-05-01 |
Gallium nitride based III-V group compound semiconductor device and method of producing the same Grant 7,205,220 - Nakamura , et al. April 17, 2 | 2007-04-17 |
Semiconductor laser device and its manufacturing method Grant 7,149,233 - Furukawa , et al. December 12, 2 | 2006-12-12 |
Gallium nitride based III-V group compound semiconductor device and method of producing the same Grant 6,998,690 - Nakamura , et al. February 14, 2 | 2006-02-14 |
Gallium nitride based Ill-V group compound semiconductor device and method of producing the same App 20060006399 - Nakamura; Shuji ;   et al. | 2006-01-12 |
Nitride semiconductor device App 20050127394 - Nagahama, Shinichi ;   et al. | 2005-06-16 |
Nitride semiconductor device App 20050121679 - Nagahama, Shinichi ;   et al. | 2005-06-09 |
Nitride semiconductor device Grant 6,849,864 - Nagahama , et al. February 1, 2 | 2005-02-01 |
Semicondutor laser device and its manufacturing method App 20040233950 - Furukawa, Yoshihiko ;   et al. | 2004-11-25 |
Gallium nitride based III-V group compound semiconductor device and method of producing the same App 20040095977 - Nakamura, Shuji ;   et al. | 2004-05-20 |
Nitride semiconductor device Grant 6,677,619 - Nagahama , et al. January 13, 2 | 2004-01-13 |
Nitride semiconductor device App 20040004223 - Nagahama, Shinichi ;   et al. | 2004-01-08 |
Gallium nitride-based III-V group compound semiconductor Grant 6,610,995 - Nakamura , et al. August 26, 2 | 2003-08-26 |
Gallium nitride-based III-V group compound semiconductor App 20030094620 - Nakamura, Shuji ;   et al. | 2003-05-22 |
Gallium nitride-based III-V group compound semiconductor Grant 6,507,041 - Nakamura , et al. January 14, 2 | 2003-01-14 |
Gallium nitride-based III-V group compound semiconductor App 20010022367 - Nakamura, Shuji ;   et al. | 2001-09-20 |
Gallium nitride-based III-V group compound semiconductor device and method of producing the same Grant 6,204,512 - Nakamura , et al. March 20, 2 | 2001-03-20 |
Nitride semiconductor light-emitting and light-receiving devices Grant 6,172,382 - Nagahama , et al. January 9, 2 | 2001-01-09 |
Gallium nitride-based III-V group compound semiconductor Grant 6,093,965 - Nakamura , et al. July 25, 2 | 2000-07-25 |
Gallium nitride-based III-V group compound semiconductor Grant 5,877,558 - Nakamura , et al. March 2, 1 | 1999-03-02 |
Gallium nitride-based III-V group compound semiconductor Grant 5,767,581 - Nakamura , et al. June 16, 1 | 1998-06-16 |
Gallium nitride-based III-V group compound semiconductor Grant 5,652,434 - Nakamura , et al. July 29, 1 | 1997-07-29 |
Gallium nitride-based III-V group compound semiconductor device and method of producing the same Grant 5,563,422 - Nakamura , et al. October 8, 1 | 1996-10-08 |
Method of manufacturing P-type compound semiconductor Grant 5,468,678 - Nakamura , et al. November 21, 1 | 1995-11-21 |
Method of manufacturing P-type compound semiconductor Grant 5,306,662 - Nakamura , et al. April 26, 1 | 1994-04-26 |
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