loadpatents
Patent applications and USPTO patent grants for SEI; Hiroaki.The latest application filed is for "sputtering target and method of manufacturing the same, and memory device manufacturing method".
Patent | Date |
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Sputtering Target And Method Of Manufacturing The Same, And Memory Device Manufacturing Method App 20220162742 - OHBA; Kazuhiro ;   et al. | 2022-05-26 |
Switch device, storage apparatus, and memory system Grant 11,183,633 - Sei , et al. November 23, 2 | 2021-11-23 |
Selection device and storage apparatus Grant 11,152,428 - Ikarashi , et al. October 19, 2 | 2021-10-19 |
Circuit element, storage device, electronic equipment, method of writing information into circuit element, and method of reading information from circuit element Grant 11,004,902 - Ikarashi , et al. May 11, 2 | 2021-05-11 |
Switching Device And Storage Unit, And Memory System App 20210036221 - OHBA; KAZUHIRO ;   et al. | 2021-02-04 |
Switch Device, Storage Apparatus, And Memory System App 20200411759 - SEI; Hiroaki ;   et al. | 2020-12-31 |
Memory device and memory unit Grant 10,879,312 - Sei , et al. December 29, 2 | 2020-12-29 |
Storage Device And Storage Unit App 20200350498 - OHBA; Kazuhiro ;   et al. | 2020-11-05 |
Switch device and storage unit Grant 10,804,321 - Ohba , et al. October 13, 2 | 2020-10-13 |
Selection Device And Storage Apparatus App 20200052036 - IKARASHI; MINORU ;   et al. | 2020-02-13 |
Switch device and storage unit Grant 10,529,777 - Sei , et al. J | 2020-01-07 |
Memory Device And Memory Unit App 20190371859 - SEI; HIROAKI ;   et al. | 2019-12-05 |
Switch Device And Storage Unit App 20190363134 - OHBA; Kazuhiro ;   et al. | 2019-11-28 |
Circuit Element, Storage Device, Electronic Equipment, Method Of Writing Information Into Circuit Element, And Method Of Reading App 20190296083 - IKARASHI; MINORU ;   et al. | 2019-09-26 |
Memory device and memory unit Grant 10,418,416 - Sei , et al. Sept | 2019-09-17 |
Switch device and storage unit Grant 10,403,680 - Ohba , et al. Sep | 2019-09-03 |
Switch Device, Storage Apparatus, And Memory System App 20190252609 - SEI; HIROAKI ;   et al. | 2019-08-15 |
Switch device and storage unit having a switch layer between first and second electrodes Grant 10,084,017 - Ohba , et al. September 25, 2 | 2018-09-25 |
Switch Device And Storage Unit App 20180204881 - SEI; Hiroaki ;   et al. | 2018-07-19 |
Switch Device And Storage Unit App 20180047784 - OHBA; Kazuhiro ;   et al. | 2018-02-15 |
Switch Device And Storage Unit App 20170316822 - SEI; Hiroaki ;   et al. | 2017-11-02 |
Storage device and storage unit with ion source layer and resistance change layer Grant 9,761,796 - Ohba , et al. September 12, 2 | 2017-09-12 |
Storage Device And Storage Unit App 20170125672 - OHBA; Kazuhiro ;   et al. | 2017-05-04 |
Switch Device And Storage Unit App 20170098684 - Ohba; Kazuhiro ;   et al. | 2017-04-06 |
Switch Device And Storage Unit App 20170098683 - Ohba; Kazuhiro ;   et al. | 2017-04-06 |
Switch device and storage unit Grant 9,543,512 - Ohba , et al. January 10, 2 | 2017-01-10 |
Switch Device And Storage Unit App 20160336378 - OHBA; Kazuhiro ;   et al. | 2016-11-17 |
Storage device and storage unit Grant 9,466,791 - Sei , et al. October 11, 2 | 2016-10-11 |
Storage Device And Storage Unit App 20160079526 - SEI; HIROAKI ;   et al. | 2016-03-17 |
Memory element and memory device Grant 9,263,670 - Yasuda , et al. February 16, 2 | 2016-02-16 |
Storage device and storage unit Grant 9,246,090 - Sei , et al. January 26, 2 | 2016-01-26 |
Memory Device And Memory Unit App 20150349025 - SEI; Hiroaki ;   et al. | 2015-12-03 |
Memory element and memory device with ion source layer and resistance change layer Grant 9,202,560 - Mizuguchi , et al. December 1, 2 | 2015-12-01 |
Storage Device And Storage Unit App 20150318471 - OHBA; Kazuhiro ;   et al. | 2015-11-05 |
Memory element and method of manufacturing the same, and memory device Grant 9,112,149 - Sei , et al. August 18, 2 | 2015-08-18 |
Switch Device And Storage Unit App 20150207066 - Ohba; Kazuhiro ;   et al. | 2015-07-23 |
Memory component including an ion source layer and a resistance change layer, and a memory device using the same Grant 8,847,194 - Yasuda , et al. September 30, 2 | 2014-09-30 |
Memory component and memory device Grant 8,710,482 - Yasuda , et al. April 29, 2 | 2014-04-29 |
Memory Component And Memory Device App 20140084235 - Yasuda; Shuichiro ;   et al. | 2014-03-27 |
Memory Element And Memory Device App 20140021434 - Yasuda; Shuichiro ;   et al. | 2014-01-23 |
Storage Device And Storage Unit App 20130334489 - SEI; HIROAKI ;   et al. | 2013-12-19 |
Storage Device And Storage Unit App 20130256622 - Sei; Hiroaki ;   et al. | 2013-10-03 |
Memory element and memory device Grant 8,546,782 - Yasuda , et al. October 1, 2 | 2013-10-01 |
Memory Element And Memory Device App 20120294063 - Mizuguchi; Tetsuya ;   et al. | 2012-11-22 |
Memory Element And Method Of Manufacturing The Same, And Memory Device App 20120145987 - SEI; Hiroaki ;   et al. | 2012-06-14 |
Memory Element And Memory Device App 20120008370 - Yasuda; Shuichiro ;   et al. | 2012-01-12 |
Memory Component And Memory Device App 20110175049 - Yasuda; Shuichiro ;   et al. | 2011-07-21 |
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