Sedlmaier; Stefan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Sedlmaier; Stefan.The latest application filed is for "method for forming a stress-reduced field-effect semiconductor device".

Company Profile

0.21.20

Sedlmaier; Stefan - Munich DE
Sedlmaier; Stefan - Muenchen DE
Sedlmaier; Stefan - Muchen DE
Sedlmaier; Stefan - Munchen DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for forming a stress-reduced field-effect semiconductor device Grant 9,941,365 - Sedlmaier , et al. April 10, 2	2018-04-10
Method for Forming a Stress-Reduced Field-Effect Semiconductor Device App 20160300914 - Sedlmaier; Stefan ; et al.	2016-10-13
Stress-reduced field-effect semiconductor device and method for forming therefor Grant 9,406,763 - Sedlmaier , et al. August 2, 2	2016-08-02
Semiconductor component with a drift region and a drift control region Grant 9,190,511 - Pfirsch , et al. November 17, 2	2015-11-17
Stress-Reduced Field-Effect Semiconductor Device and Method for Forming Therefor App 20150137222 - Sedlmaier; Stefan ; et al.	2015-05-21
Stress-reduced field-effect semiconductor device and method for forming therefor Grant 8,907,408 - Sedlmaier , et al. December 9, 2	2014-12-09
Semiconductor component with high breakthrough tension and low forward resistance Grant 8,643,086 - Pfirsch , et al. February 4, 2	2014-02-04
Semiconductor Component With A Drift Region And A Drift Control Region App 20140001528 - Pfirsch; Frank ; et al.	2014-01-02
Stress-Reduced Field-Effect Semiconductor Device and Method for Forming Therefor App 20130248993 - Sedlmaier; Stefan ; et al.	2013-09-26
Semiconductor component with a drift region and a drift control region Grant 8,461,648 - Pfirsch , et al. June 11, 2	2013-06-11
Semiconductor component structure with vertical dielectric layers Grant 8,319,261 - Mauder , et al. November 27, 2	2012-11-27
Power semiconductor component with charge compensation structure and method for the fabrication thereof Grant 8,263,450 - Sedlmaier , et al. September 11, 2	2012-09-11
Semiconductor component including a drift zone and a drift control zone Grant 8,193,584 - Mauder , et al. June 5, 2	2012-06-05
Semiconductor Component With High Breakthrough Tension And Low Forward Resistance App 20120132956 - Pfirsch; Frank Dieter ; et al.	2012-05-31
Power semiconductor component with a low on-state resistance Grant 8,110,868 - Pfirsch , et al. February 7, 2	2012-02-07
Integrated circuit including a charge compensation component Grant 7,968,919 - Willmeroth , et al. June 28, 2	2011-06-28
Method for producing a semiconductor including a foreign material layer Grant 7,947,569 - Mauder , et al. May 24, 2	2011-05-24
Semiconductor component with a drift zone and a drift control zone Grant 7,943,987 - Willmeroth , et al. May 17, 2	2011-05-17
Semiconductor component structure with vertical dielectric layers Grant 7,943,449 - Mauder , et al. May 17, 2	2011-05-17
Semiconductor Component Structure With Vertical Dielectric Layers App 20110101451 - Mauder; Anton ; et al.	2011-05-05
Method Of Making A Device Including A Capacitive Structure App 20100273307 - Sedlmaier; Stefan ; et al.	2010-10-28
Semiconductor component comprising a drift zone and a drift control zone Grant 7,821,033 - Sedlmaier , et al. October 26, 2	2010-10-26
Component arrangement including a power semiconductor component having a drift control zone Grant 7,709,891 - Mauder , et al. May 4, 2	2010-05-04
Semiconductor component with a drift zone and a drift control zone App 20100078710 - Willmeroth; Armin ; et al.	2010-04-01
Semiconductor Component Structure With Vertical Dielectric Layers App 20100078713 - Mauder; Anton ; et al.	2010-04-01
Semiconductor Component Including A Drift Zone And A Drift Control Zone App 20090321804 - Mauder; Anton ; et al.	2009-12-31
Method For Producing A Semiconductor Including A Material Layer App 20090325361 - Mauder; Anton ; et al.	2009-12-31
Semiconductor Component With A Drift Region And A Drift Control Region App 20090218621 - Pfirsch; Frank ; et al.	2009-09-03
Power semiconductor component with charge compensation structure and method for the fabrication thereof Grant 7,554,137 - Sedlmaier , et al. June 30, 2	2009-06-30
Power Semiconductor Component With Charge Compensation Structure And Method For The Fabrication Thereof App 20090130806 - Sedlmaier; Stefan ; et al.	2009-05-21
Method for fabricating a semiconductor component Grant 7,459,365 - Rub , et al. December 2, 2	2008-12-02
Component Arrangement Including A Power Semiconductor Component Having A Drift Control Zone App 20080265320 - Mauder; Anton ; et al.	2008-10-30
Semiconductor component comprising a drift zone and a drift control zone App 20080197380 - Sedlmaier; Stefan ; et al.	2008-08-21
Integrated Circuit Including A Charge Compensation Component App 20080150073 - Willmeroth; Armin ; et al.	2008-06-26
Method for fabricating a semiconductor component App 20070108513 - Rub; Michael ; et al.	2007-05-17
Power Semiconductor Component With Charge Compensation Structure And Method For The Fabrication Thereof App 20070108512 - Sedlmaier; Stefan ; et al.	2007-05-17
Semiconductor component with a low on-state resistance App 20070023830 - Pfirsch; Frank Dieter ; et al.	2007-02-01

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