Patent | Date |
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Method For Operation Of A Field Effect Transistor Arrangement App 20180076323 - SCHWALKE; Udo ;   et al. | 2018-03-15 |
Field Effect Transistor Arrangement App 20160218212 - SCHWALKE; Udo ;   et al. | 2016-07-28 |
Integrated circuit arrangement and method for the manufacture thereof Grant 6,913,983 - Schwalke , et al. July 5, 2 | 2005-07-05 |
Method for manufacturing an integrated circuit arrangement Grant 6,057,211 - Schwalke May 2, 2 | 2000-05-02 |
Method of producing an MOS transistor Grant 5,998,271 - Schwalke December 7, 1 | 1999-12-07 |
Circuit structure having at least one MOS transistor and method for its production Grant 5,965,926 - Schwalke October 12, 1 | 1999-10-12 |
MOSFETs with improved short channel effects Grant 5,932,919 - Schwalke August 3, 1 | 1999-08-03 |
Process for the production of an integrated CMOS circuit Grant 5,882,964 - Schwalke March 16, 1 | 1999-03-16 |
Formation of silicided junctions in deep submicron MOSFETS by defect enhanced CoSi2 formation Grant 5,780,929 - Zeininger , et al. July 14, 1 | 1998-07-14 |
Process for producing a diffusion region adjacent to a recess in a substrate Grant 5,726,094 - Schwalke , et al. March 10, 1 | 1998-03-10 |
Method for manufacturing an insulating trench in an SOI substrate for smartpower technologies Grant 5,700,712 - Schwalke December 23, 1 | 1997-12-23 |
Thin-film transistor and method for the manufacture thereof Grant 5,528,053 - Schwalke June 18, 1 | 1996-06-18 |
Method for manufacturing an insulating trench in a substrate for smart-power technologies Grant 5,496,765 - Schwalke March 5, 1 | 1996-03-05 |
Integrated circuit arrangement having at least one power component and low-voltage components Grant 5,473,181 - Schwalke , et al. December 5, 1 | 1995-12-05 |
Method for manufacturing an integrated circuit arrangement Grant 5,470,782 - Schwalke , et al. November 28, 1 | 1995-11-28 |
Method for manufacturing a trench in a substrate for use in smart-power technology Grant 5,445,988 - Schwalke August 29, 1 | 1995-08-29 |
Low junction leakage MOSFETs Grant 5,439,831 - Schwalke , et al. * August 8, 1 | 1995-08-08 |
Method for producing an insulating trench in an SOI substrate Grant 5,416,041 - Schwalke May 16, 1 | 1995-05-16 |
Formation of silicided junctions in deep sub-micron MOSFETs by defect enhanced CoSi2 formation Grant 5,344,793 - Zeininger , et al. September 6, 1 | 1994-09-06 |
Method of forming shallow junctions in field effect transistors Grant 5,268,317 - Schwalke , et al. December 7, 1 | 1993-12-07 |
Method for manufacturing a multi-layer gate electrode for a MOS transistor Grant 5,164,333 - Schwalke , et al. November 17, 1 | 1992-11-17 |