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name:-0.021795988082886
name:-0.018071174621582
name:-0.0017120838165283
Schuehrer; Holger Patent Filings

Schuehrer; Holger

Patent Applications and Registrations

Patent applications and USPTO patent grants for Schuehrer; Holger.The latest application filed is for "semiconductor devices having through-contacts and related fabrication methods".

Company Profile
1.18.17
  • Schuehrer; Holger - Dresden N/A DE
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor devices having through-contacts and related fabrication methods
Grant 8,951,907 - Richter , et al. February 10, 2
2015-02-10
Method of reducing contamination by providing an etch stop layer at the substrate edge
Grant 8,426,312 - Richter , et al. April 23, 2
2013-04-23
Contact optimization for enhancing stress transfer in closely spaced transistors
Grant 8,384,161 - Richter , et al. February 26, 2
2013-02-26
Method and apparatus for reducing semiconductor package tensile stress
Grant 8,212,346 - Ryan , et al. July 3, 2
2012-07-03
Semiconductor Devices Having Through-contacts And Related Fabrication Methods
App 20120146106 - RICHTER; Ralf ;   et al.
2012-06-14
Void sealing in a dielectric material of a contact level of a semiconductor device comprising closely spaced transistors
Grant 8,129,276 - Richter , et al. March 6, 2
2012-03-06
Reducing metal voids in a metallization layer stack of a semiconductor device by providing a dielectric barrier layer
Grant 8,097,536 - Schuehrer , et al. January 17, 2
2012-01-17
Reducing contamination of semiconductor substrates during BEOL processing by performing a deposition/etch cycle during barrier deposition
Grant 8,039,400 - Koschinsky , et al. October 18, 2
2011-10-18
Contact Optimization For Enhancing Stress Transfer In Closely Spaced Transistors
App 20100327367 - Richter; Ralf ;   et al.
2010-12-30
Method for removing a passivation layer prior to depositing a barrier layer in a copper metallization layer
Grant 7,820,536 - Schuehrer , et al. October 26, 2
2010-10-26
Semiconductor substrate having a protection layer at the substrate back side
Grant 7,781,343 - Letz , et al. August 24, 2
2010-08-24
Void Sealing In A Dielectric Material Of A Contact Level Of A Semiconductor Device Comprising Closely Spaced Transistors
App 20100193963 - Richter; Ralf ;   et al.
2010-08-05
Test structure for determining characteristics of semiconductor alloys in SOI transistors by x-ray diffraction
Grant 7,763,476 - Frohberg , et al. July 27, 2
2010-07-27
Reducing Metal Voids In A Metallization Layer Stack Of A Semiconductor Device By Providing A Dielectric Barrier Layer
App 20100109161 - Schuehrer; Holger ;   et al.
2010-05-06
Method And Apparatus For Reducing Semiconductor Package Tensile Stress
App 20100102435 - RYAN; E. Todd ;   et al.
2010-04-29
Reducing Contamination Of Semiconductor Substrates During Beol Processing By Performing A Deposition/etch Cycle During Barrier Deposition
App 20090325378 - Koschinsky; Frank ;   et al.
2009-12-31
Technique for non-destructive metal delamination monitoring in semiconductor devices
Grant 7,638,424 - Richter , et al. December 29, 2
2009-12-29
Method and semiconductor structure for monitoring the fabrication of interconnect structures and contacts in a semiconductor device
Grant 7,491,555 - Lehr , et al. February 17, 2
2009-02-17
Method of reducing contamination by removing an interlayer dielectric from the substrate edge
Grant 7,410,885 - Schuehrer , et al. August 12, 2
2008-08-12
Technique for creating different mechanical strain in different channel regions by forming an etch stop layer stack having differently modified intrinsic stress
Grant 7,396,718 - Frohberg , et al. July 8, 2
2008-07-08
Semiconductor Substrate Having A Protection Layer At The Substrate Back Side
App 20080132072 - Letz; Tobias ;   et al.
2008-06-05
Test Structure For Determining Characteristics Of Semiconductor Alloys In Soi Transistors By X-ray Diffraction
App 20080012073 - Frohberg; Kai ;   et al.
2008-01-17
Technique for forming a passivation layer prior to depositing a barrier layer in a copper metallization layer
Grant 7,259,091 - Schuehrer , et al. August 21, 2
2007-08-21
Technique For Non-destructive Metal Delamination Monitoring In Semiconductor Devices
App 20070178691 - Richter; Ralf ;   et al.
2007-08-02
Method Of Reducing Contamination By Providing An Etch Stop Layer At The Substrate Edge
App 20070155133 - Richter; Ralf ;   et al.
2007-07-05
Method For Removing A Passivation Layer Prior To Depositing A Barrier Layer In A Copper Metallization Layer
App 20070123034 - Schuehrer; Holger ;   et al.
2007-05-31
Method And Semiconductor Structure For Monitoring The Fabrication Of Interconnect Structures And Contacts In A Semiconductor Device
App 20070048883 - LEHR; MATTHIAS ;   et al.
2007-03-01
Method Of Reducing Contamination By Removing An Interlayer Dielectric From The Substrate Edge
App 20070026670 - Schuehrer; Holger ;   et al.
2007-02-01
Technique for forming self-aligned vias in a metallization layer
App 20060246718 - Frohberg; Kai ;   et al.
2006-11-02
Method of forming electrical connections in a semiconductor structure
App 20060141775 - Schuehrer; Holger ;   et al.
2006-06-29
Technique for creating different mechanical strain in different channel regions by forming an etch stop layer stack having differently modified intrinsic stress
App 20060091471 - Frohberg; Kai ;   et al.
2006-05-04
Technique for forming a passivation layer prior to depositing a barrier layer in a copper metallization layer
App 20060024951 - Schuehrer; Holger ;   et al.
2006-02-02

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