Schricker; April D

Patent Applications and Registrations

Patent applications and USPTO patent grants for Schricker; April D.The latest application filed is for "non-volatile storage system using opposite polarity programming signals for mim memory cell".

Company Profile

0.35.22

Schricker; April D - Palo Alto CA
Schricker; April D. - Palo Alto CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Non-volatile storage system using opposite polarity programming signals for MIM memory cell Grant 9,047,949 - Zhang , et al. June 2, 2	2015-06-02
Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same Grant 8,878,235 - Schricker , et al. November 4, 2	2014-11-04
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same Grant 8,816,315 - Schricker , et al. August 26, 2	2014-08-26
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same Grant 8,809,114 - Schricker , et al. August 19, 2	2014-08-19
Non-Volatile Storage System Using Opposite Polarity Programming Signals For MIM Memory Cell App 20140198558 - Zhang; Jingyan ; et al.	2014-07-17
Non-volatile storage system using opposite polarity programming signals for MIM memory cell Grant 8,699,259 - Zhang , et al. April 15, 2	2014-04-15
Carbon nano-film reversible resistance-switchable elements and methods of forming the same Grant 8,680,503 - Li , et al. March 25, 2	2014-03-25
Memory Cell That Employs A Selectively Grown Reversible Resistance-switching Element And Methods Of Forming The Same App 20130320287 - Schricker; April D. ; et al.	2013-12-05
Carbon-based interface layer for a memory device and methods of forming the same Grant 8,569,730 - Xu , et al. October 29, 2	2013-10-29
Memory cell that includes a carbon-based memory element and methods of forming the same Grant 8,536,015 - Scheuerlein , et al. September 17, 2	2013-09-17
Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same Grant 8,530,318 - Schricker September 10, 2	2013-09-10
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same Grant 8,507,315 - Schricker , et al. August 13, 2	2013-08-13
Memory cell that includes a carbon-based memory element and methods of forming the same Grant 8,481,394 - Chan , et al. July 9, 2	2013-07-09
Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom Grant 8,467,224 - Schricker , et al. June 18, 2	2013-06-18
Memory Cell That Employs A Selectively Grown Reversible Resistance-switching Element And Methods Of Forming The Same App 20130146832 - Schricker; April D. ; et al.	2013-06-13
Methods for etching carbon nano-tube films for use in non-volatile memories Grant 8,445,385 - Schricker , et al. May 21, 2	2013-05-21
Methods for increasing carbon nano-tube (CNT) yield in memory devices Grant 8,431,417 - Schricker April 30, 2	2013-04-30
Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same Grant 8,421,050 - Ping , et al. April 16, 2	2013-04-16
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same Grant 8,373,150 - Schricker , et al. February 12, 2	2013-02-12
Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices Grant 8,309,407 - Schricker November 13, 2	2012-11-13
Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same Grant 8,304,284 - Schricker November 6, 2	2012-11-06
Non-Volatile Storage System Using Opposite Polarity Programming Signals For MIM Memory Cell App 20120224413 - Zhang; Jingyan ; et al.	2012-09-06
Methods For Increasing Bottom Electrode Performance In Carbon-based Memory Devices App 20120223414 - Schricker; April D. ; et al.	2012-09-06
Carbon Nano-film Reversible Resistance-switchable Elements And Methods Of Forming The Same App 20120168707 - Li; Yubao ; et al.	2012-07-05
Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance Grant 8,183,121 - Schricker , et al. May 22, 2	2012-05-22
Memory Cell That Includes A Carbon-based Memory Element And Methods Of Forming The Same App 20120119178 - Scheuerlein; Roy E. ; et al.	2012-05-17
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same Grant 8,173,486 - Schricker , et al. May 8, 2	2012-05-08
Carbon nano-film reversible resistance-switchable elements and methods of forming the same Grant 8,133,793 - Li , et al. March 13, 2	2012-03-13
Memory Cell That Employs A Selectively Fabricated Carbon Nano-tube Reversible Resistance-switching Element And Methods Of Forming The Same App 20120001150 - Schricker; April D. ; et al.	2012-01-05
Memory Cell That Includes A Carbon-based Memory Element And Methods Of Forming The Same App 20110215320 - Chan; Michael Y. ; et al.	2011-09-08
Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same Grant 7,977,667 - Schricker , et al. July 12, 2	2011-07-12
Carbon-based Films, And Methods Of Forming The Same, Having Dielectric Filler Material And Exhibiting Reduced Thermal Resistance App 20100245029 - Schricker; April D. ; et al.	2010-09-30
Electronic Devices Including Carbon Nano-tube Films Having Carbon-based Liners, And Methods Of Forming The Same App 20100108982 - Ping; Er-Xuan ; et al.	2010-05-06
Electronic Devices Including Carbon-based Films, And Methods Of Forming Such Devices App 20100108976 - Jayasekara; Wipul Pemsiri ; et al.	2010-05-06
Memory Cell That Includes A Carbon Nano-tube Reversible Resistance-switching Element And Methods Of Forming The Same App 20100072445 - Schricker; April D. ; et al.	2010-03-25
Methods For Increasing Carbon Nano-tube (cnt) Yield In Memory Devices App 20100044671 - Schricker; April D.	2010-02-25
Electronic Devices Including Carbon-based Films Having Sidewall Liners, And Methods Of Forming Such Devices App 20100012912 - Schricker; April D.	2010-01-21
Carbon-based Interface Layer For A Memory Device And Methods Of Forming The Same App 20100006811 - Xu; Huiwen ; et al.	2010-01-14
Carbon Nano-film Reversible Resistance-switchable Elements And Methods Of Forming The Same App 20090283735 - Li; Yubao ; et al.	2009-11-19
Methods For Etching Carbon Nano-tube Films For Use In Non-volatile Memories App 20090278112 - Schricker; April D. ; et al.	2009-11-12
Memory Cell That Employs A Selectively Fabricated Carbon Nano-tube Reversible Resistance-switching Element Formed Over A Bottom Conductor And Methods Of Forming The Same App 20090256131 - Schricker; April D.	2009-10-15
Memory Cell That Includes A Carbon-based Memory Element And Methods Of Forming The Same App 20090256132 - Scheuerlein; Roy E. ; et al.	2009-10-15
Damascene Integration Methods For Graphitic Films In Three-dimensional Memories And Memories Formed Therefrom App 20090257270 - Schricker; April D. ; et al.	2009-10-15
Memory Cell That Employs A Selectively Fabricated Carbon Nano-tube Reversible Resistance-switching Element, And Methods Of Forming The Same App 20090256130 - Schricker; April D.	2009-10-15

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.