Patent | Date |
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SiC-PN power diode Grant 7,646,026 - Friedrichs , et al. January 12, 2 | 2010-01-12 |
Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure Grant 7,615,802 - Elpelt , et al. November 10, 2 | 2009-11-10 |
SiC-PN Power Diode App 20080217627 - Friedrichs; Peter ;   et al. | 2008-09-11 |
Electronic switching device Grant 7,206,178 - Friedrichs , et al. April 17, 2 | 2007-04-17 |
Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure App 20060255373 - Elpelt; Rudolf ;   et al. | 2006-11-16 |
Electronic switching device and an operating method thereof Grant 7,082,020 - Friedrichs , et al. July 25, 2 | 2006-07-25 |
Semiconductor structure with a switch element and an edge element Grant 7,071,503 - Dohnke , et al. July 4, 2 | 2006-07-04 |
Semiconductor structure with a switch element and an edge element App 20050062112 - Dohnke, Karl ;   et al. | 2005-03-24 |
Method for contacting a semiconductor configuration Grant 6,815,351 - Friedrichs , et al. November 9, 2 | 2004-11-09 |
Electronic switching device and an operating method thereof App 20040047098 - Friedrichs, Peter ;   et al. | 2004-03-11 |
Semiconductor construction with buried island region and contact region Grant 6,693,322 - Friedrichs , et al. February 17, 2 | 2004-02-17 |
Electronic switching device App 20040027753 - Friedrichs, Peter ;   et al. | 2004-02-12 |
Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configuration Grant 6,667,495 - Friedrichs , et al. December 23, 2 | 2003-12-23 |
Method for contacting a semiconductor configuration App 20030146437 - Friedrichs, Peter ;   et al. | 2003-08-07 |
Semiconductor construction with buried island region and contact region App 20030137010 - Friedrichs, Peter ;   et al. | 2003-07-24 |
Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor device Grant 6,468,890 - Bartsch , et al. October 22, 2 | 2002-10-22 |
Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structure Grant 6,316,791 - Schorner , et al. November 13, 2 | 2001-11-13 |
Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor device App 20010023124 - Bartsch, Wolfgang ;   et al. | 2001-09-20 |
Semiconductor configuration with an Ohmic contact-connection and method for contacting a semiconductor configuration App 20010002705 - Friedrichs, Peter ;   et al. | 2001-06-07 |
Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configuration App 20010001484 - Friedrichs, Peter ;   et al. | 2001-05-24 |
Method for patterning semiconductors with high precision, good homogeneity and reproducibility Grant 6,204,135 - Peters , et al. March 20, 2 | 2001-03-20 |
Silicon carbide semiconductor configuration with a high degree of channel mobility Grant 6,097,039 - Peters , et al. August 1, 2 | 2000-08-01 |