Scholze; Andreas

Patent Applications and Registrations

Patent applications and USPTO patent grants for Scholze; Andreas.The latest application filed is for "contact-first field-effect transistors".

Company Profile

2.12.11

Scholze; Andreas - Colchester VT

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Contact-first Field-effect Transistors App 20200066871 - Hook; Terence P. ; et al.	2020-02-27
Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode Grant 10,297,589 - Gauthier, Jr. , et al.	2019-05-21
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction Grant 10,249,714 - Guo , et al.	2019-04-02
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction and semiconductor device having reduced junction leakage Grant 9,793,272 - Guo , et al. October 17, 2	2017-10-17
Method Of Forming Epitaxial Buffer Layer For Finfet Source And Drain Junction Leakage Reduction App 20170294510 - GUO; DECHAO ; et al.	2017-10-12
FINFET having notched fins and method of forming same Grant 9,786,765 - Nowak , et al. October 10, 2	2017-10-10
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction Grant 9,786,661 - Guo , et al. October 10, 2	2017-10-10
Finfet Having Notched Fins And Method Of Forming Same App 20170236917 - Nowak; Edward J. ; et al.	2017-08-17
Electrostatic Discharge And Passive Structures Integrated In A Vertical Gate Fin-type Field Effect Diode App 20170229443 - Gauthier, JR.; Robert J. ; et al.	2017-08-10
Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode Grant 9,704,852 - Gauthier, Jr. , et al. July 11, 2	2017-07-11
Subsurface wires of integrated chip and methods of forming Grant 9,601,513 - Hook , et al. March 21, 2	2017-03-21
Field-isolated bulk FinFET Grant 9,536,882 - Anderson , et al. January 3, 2	2017-01-03
Electrostatic Discharge And Passive Structures Integrated In A Veritcal Gate Fin-type Field Effect Diode App 20160379972 - Gauthier, JR.; Robert J. ; et al.	2016-12-29
Contact-first Field-effect Transistors App 20160372600 - Hook; Terence B. ; et al.	2016-12-22
Method Of Forming Epitaxial Buffer Layer For Finfet Source And Drain Junction Leakage Reduction App 20160284701 - GUO; DECHAO ; et al.	2016-09-29
Method Of Forming Epitaxial Buffer Layer For Finfet Source And Drain Junction Leakage Reduction App 20160276463 - GUO; DECHAO ; et al.	2016-09-22
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction Grant 9,390,976 - Guo , et al. July 12, 2	2016-07-12
Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode Grant 9,391,065 - Gauthier, Jr. , et al. July 12, 2	2016-07-12
Field-isolated Bulk Finfet App 20160181247 - Anderson; Brent A. ; et al.	2016-06-23
Epitaxial Buffer Layer For Finfet Source And Drain Junction Leakage Reduction App 20150318211 - GUO; DECHAO ; et al.	2015-11-05
Buried oxidation for enhanced mobility Grant 8,647,935 - Anderson , et al. February 11, 2	2014-02-11
Buried Oxidation For Enhanced Mobility App 20120153353 - Anderson; Brent A. ; et al.	2012-06-21

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.