Schoerner; Reinhold

Patent Applications and Registrations

Patent applications and USPTO patent grants for Schoerner; Reinhold.The latest application filed is for "silicon carbide semiconductor component".

Company Profile

5.6.6

Schoerner; Reinhold - Grossenseebach DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Silicon carbide semiconductor component Grant 11,177,380 - Wehrhahn-Kilian , et al. November 16, 2	2021-11-16
Semiconductor device with junction termination zone Grant 10,861,964 - Rupp , et al. December 8, 2	2020-12-08
Semiconductor devices and a circuit for controlling a field effect transistor of a semiconductor device Grant 10,818,749 - Mauder , et al. October 27, 2	2020-10-27
Semiconductor device with termination structure including field zones and method of manufacturing Grant 10,541,325 - Elpelt , et al. Ja	2020-01-21
Silicon Carbide Semiconductor Component App 20190296143 - Wehrhahn-Kilian; Larissa ; et al.	2019-09-26
Semiconductor Device with Junction Termination Zone App 20190131446 - Rupp; Roland ; et al.	2019-05-02
Semiconductor Device with Termination Structure Including Field Zones and Method of Manufacturing App 20190131447 - Elpelt; Rudolf ; et al.	2019-05-02
Method for manufacturing a semiconductor device comprising a metal nitride layer and semiconductor device Grant 10,014,383 - Konrath , et al. July 3, 2	2018-07-03
Semiconductor Devices and a Circuit for Controlling a Field Effect Transistor of a Semiconductor Device App 20170170264 - Mauder; Anton ; et al.	2017-06-15
Method For Manufacturing A Semiconductor Device Comprising A Metal Nitride Layer And Semiconductor Device App 20160181388 - Konrath; Jens Peter ; et al.	2016-06-23
Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material Grant 6,936,850 - Friedrichs , et al. August 30, 2	2005-08-30
Semiconductor device made from silicon carbide with a schottky contact and an ohmic contact made from a nickel-aluminum material and process for producing the semiconductor device App 20020125482 - Friedrichs, Peter ; et al.	2002-09-12

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