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Patent applications and USPTO patent grants for Schaff; William J..The latest application filed is for "patterning during film growth".
Patent | Date |
---|---|
Highly doped III-nitride semiconductors Grant 7,993,938 - Schaff , et al. August 9, 2 | 2011-08-09 |
Method of forming an AlN coated heterojunction field effect transistor Grant 7,622,322 - Schaff , et al. November 24, 2 | 2009-11-24 |
Patterning During Film Growth App 20090227093 - Schaff; William J. ;   et al. | 2009-09-10 |
Highly Doped Iii-nitride Semiconductors App 20090165816 - Schaff; William J. ;   et al. | 2009-07-02 |
Highly doped III-nitride semiconductors Grant 7,485,901 - Schaff , et al. February 3, 2 | 2009-02-03 |
Highly doped III-nitride semiconductors Grant 7,482,191 - Schaff , et al. January 27, 2 | 2009-01-27 |
Broad spectrum solar cell Grant 7,217,882 - Walukiewicz , et al. May 15, 2 | 2007-05-15 |
Highly doped III-nitride semiconductors Grant 6,953,740 - Schaff , et al. October 11, 2 | 2005-10-11 |
Highly doped III-nitride semiconductors App 20050179047 - Schaff, William J. ;   et al. | 2005-08-18 |
Highly doped III-nitride semiconductors App 20050179050 - Schaff, William J. ;   et al. | 2005-08-18 |
Highly doped III-nitride semiconductors Grant 6,888,170 - Schaff , et al. May 3, 2 | 2005-05-03 |
Broad spectrum solar cell App 20040118451 - Walukiewicz, Wladyslaw ;   et al. | 2004-06-24 |
Highly doped III-nitride semiconductors App 20030173578 - Schaff, William J. ;   et al. | 2003-09-18 |
Highly doped III-nitride semiconductors App 20030176003 - Schaff, William J. ;   et al. | 2003-09-18 |
AIN coated heterojunction field effect transistor and method of forming an AIN coating App 20020137236 - Schaff, William J. ;   et al. | 2002-09-26 |
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