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name:-0.020798921585083
name:-0.021711826324463
name:-0.00077390670776367
SAYAMA; Hirokazu Patent Filings

SAYAMA; Hirokazu

Patent Applications and Registrations

Patent applications and USPTO patent grants for SAYAMA; Hirokazu.The latest application filed is for "semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same".

Company Profile
1.45.42
  • SAYAMA; Hirokazu - Tokyo JP
  • SAYAMA; Hirokazu - Kanagawa JP
  • Sayama; Hirokazu - Chiyoda-ku JP
  • Sayama; Hirokazu - Hyogo JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20210313467 - SAYAMA; Hirokazu ;   et al.
2021-10-07
Semiconductor Device And Method Of Manufacturing The Same
App 20210249353 - SAYAMA; Hirokazu ;   et al.
2021-08-12
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The
App 20200227557 - SAYAMA; Hirokazu ;   et al.
2020-07-16
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20180069119 - SAYAMA; Hirokazu ;   et al.
2018-03-08
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 9,847,417 - Sayama , et al. December 19, 2
2017-12-19
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20170104099 - SAYAMA; Hirokazu ;   et al.
2017-04-13
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 9,614,081 - Sayama , et al. April 4, 2
2017-04-04
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20160315192 - SAYAMA; Hirokazu ;   et al.
2016-10-27
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 9,412,867 - Sayama , et al. August 9, 2
2016-08-09
Method of manufacturing semiconductor device with offset sidewall structure
Grant 9,349,816 - Ota , et al. May 24, 2
2016-05-24
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20160056289 - SAYAMA; Hirokazu ;   et al.
2016-02-25
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20160056254 - OTA; Kazunobu ;   et al.
2016-02-25
Method of manufacturing semiconductor device with offset sidewall structure
Grant 9,214,464 - Ota , et al. December 15, 2
2015-12-15
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 9,209,191 - Sayama , et al. December 8, 2
2015-12-08
Semiconductor Device Including A High Voltage P-channel Transistor And Method For Manufacturing The Same
App 20150340287 - SAYAMA; Hirokazu
2015-11-26
Semiconductor Device And Method For Producing The Same
App 20150325486 - SAYAMA; Hirokazu
2015-11-12
Semiconductor device including a high voltage P-channel transistor and method for manufacturing the same
Grant 9,129,841 - Sayama September 8, 2
2015-09-08
Semiconductor device and method for producing the same
Grant 9,112,013 - Sayama August 18, 2
2015-08-18
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20150194428 - OTA; Kazunobu ;   et al.
2015-07-09
Method of manufacturing semiconductor device with offset sidewall structure
Grant 8,987,081 - Ota , et al. March 24, 2
2015-03-24
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20140377920 - OTA; Kazunobu ;   et al.
2014-12-25
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20140322878 - SAYAMA; Hirokazu ;   et al.
2014-10-30
Method of manufacturing semiconductor device with offset sidewall structure
Grant 8,859,360 - Ota , et al. October 14, 2
2014-10-14
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 8,809,186 - Sayama , et al. August 19, 2
2014-08-19
Semiconductor device
Grant 8,742,497 - Sayama June 3, 2
2014-06-03
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20140113418 - Ota; Kazunobu ;   et al.
2014-04-24
Method of manufacturing semiconductor device with offset sidewall structure
Grant 8,642,418 - Ota , et al. February 4, 2
2014-02-04
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20140024194 - SAYAMA; Hirokazu ;   et al.
2014-01-23
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20130330890 - OTA; Kazunobu ;   et al.
2013-12-12
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 8,586,475 - Sayama , et al. November 19, 2
2013-11-19
Semiconductor Device
App 20130277738 - SAYAMA; Hirokazu
2013-10-24
Method of manufacturing semiconductor device with offset sidewall structure
Grant 8,541,272 - Ota , et al. September 24, 2
2013-09-24
Semiconductor Device And Method For Producing The Same
App 20130234258 - SAYAMA; Hirokazu
2013-09-12
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20130203223 - OTA; Kazunobu ;   et al.
2013-08-08
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20130130457 - SAYAMA; Hirokazu ;   et al.
2013-05-23
Method of manufacturing semiconductor device with offset sidewall structure
Grant 8,415,213 - Ota , et al. April 9, 2
2013-04-09
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 8,372,747 - Sayama , et al. February 12, 2
2013-02-12
Semiconductor Device And Method For Manufacturing The Same
App 20120153388 - SAYAMA; Hirokazu
2012-06-21
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20110275185 - OTA; Kazunobu ;   et al.
2011-11-10
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20110207312 - Sayama; Hirokazu ;   et al.
2011-08-25
Method of manufacturing semiconductor device with offset sidewall structure
Grant 7,998,802 - Ota , et al. August 16, 2
2011-08-16
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 7,960,281 - Sayama , et al. June 14, 2
2011-06-14
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20090253235 - Ota; Kazunobu ;   et al.
2009-10-08
Method of manufacturing semiconductor device with offset sidewall structure
Grant 7,563,663 - Ota , et al. July 21, 2
2009-07-21
Method of manufacturing semiconductor device with offset sidewall structure
Grant 7,531,402 - Ota , et al. May 12, 2
2009-05-12
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20090081843 - SAYAMA; Hirokazu ;   et al.
2009-03-26
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 7,470,618 - Sayama , et al. December 30, 2
2008-12-30
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20070207578 - OTA; Kazunobu ;   et al.
2007-09-06
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20070202634 - OTA; Kazunobu ;   et al.
2007-08-30
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20070128816 - SAYAMA; Hirokazu ;   et al.
2007-06-07
Method of manufacturing semiconductor device with offset sidewall structure
Grant 7,220,637 - Ota , et al. May 22, 2
2007-05-22
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 7,183,204 - Sayama , et al. February 27, 2
2007-02-27
Semiconductor device and method of manufacturing same
App 20060273394 - Matsumoto; Takuji ;   et al.
2006-12-07
Semiconductor device and method of manufacturing same
Grant 7,109,553 - Matsumoto , et al. September 19, 2
2006-09-19
Method of manufacturing semiconductor device
Grant 7,015,107 - Sugihara , et al. March 21, 2
2006-03-21
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
App 20050202603 - Sayama, Hirokazu ;   et al.
2005-09-15
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 6,906,393 - Sayama , et al. June 14, 2
2005-06-14
Manufacturing method of semiconductor device
Grant 6,872,642 - Oda , et al. March 29, 2
2005-03-29
Method of manufacturing semiconductor device having gate electrode with expanded upper portion
Grant 6,835,610 - Sayama , et al. December 28, 2
2004-12-28
Semiconductor device and method of manufacturing same
App 20040222465 - Matsumoto, Takuji ;   et al.
2004-11-11
Semiconductor device having offset insulation film formed on insulation film, and method of manufacturing the same
Grant 6,806,537 - Matsumoto , et al. October 19, 2
2004-10-19
Manufacturing method of semiconductor device
App 20040101999 - Oda, Hidekazu ;   et al.
2004-05-27
Semiconductor device and manufacturing method thereof
Grant 6,740,939 - Sayama , et al. May 25, 2
2004-05-25
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
App 20040097030 - Sayama, Hirokazu ;   et al.
2004-05-20
Method of manufacturing semiconductor device having gate electrode with expanded upper portion
App 20040043549 - Sayama, Hirokazu ;   et al.
2004-03-04
Method of manufacturing semiconductor device
Grant 6,670,277 - Sayama , et al. December 30, 2
2003-12-30
Method of manufacturing semiconductor device
Grant 6,667,206 - Sayama December 23, 2
2003-12-23
Method of manufacturing semiconductor device
App 20030170958 - Sugihara, Kohei ;   et al.
2003-09-11
Semiconductor device, method of manufacturing the same and exposure mask for implantation
Grant 6,600,180 - Ueno , et al. July 29, 2
2003-07-29
Semiconductor device
Grant 6,600,195 - Nishida , et al. July 29, 2
2003-07-29
Method of manufacturing semiconductor device with offset sidewall structure
App 20030059983 - Ota, Kazunobu ;   et al.
2003-03-27
Semiconductor device and method of manufacturing same
App 20030025135 - Matsumoto, Takuji ;   et al.
2003-02-06
Semiconductor device and manufacturing method thereof
App 20020164858 - Sayama, Hirokazu ;   et al.
2002-11-07
Method of manufacturing semiconductor device
App 20020160613 - Sayama, Hirokazu ;   et al.
2002-10-31
Semiconductor device and manufacturing method thereof
App 20020047163 - Sayama, Hirokazu ;   et al.
2002-04-25
Method of manufacturing semiconductor device
App 20020031883 - Sayama, Hirokazu
2002-03-14
Method of manufacturing semiconductor device
Grant 6,344,388 - Oishi , et al. February 5, 2
2002-02-05
Semiconductor Device And Method Of Manufacturing Seciconductor Device
App 20020006706 - NISHIDA, YUKIO ;   et al.
2002-01-17
Semiconductor device manufacturing method
Grant 6,335,252 - Oishi , et al. January 1, 2
2002-01-01
Semiconductor device and manufacturing method thereof
Grant 6,281,558 - Sayama , et al. August 28, 2
2001-08-28
Semiconductor device and method of manufacturing the same
Grant 6,218,262 - Kuroi , et al. April 17, 2
2001-04-17
Semiconductor device and method of fabricating thereof
Grant 6,017,800 - Sayama , et al. January 25, 2
2000-01-25
Semiconductor device and method of manufacturing the same
Grant 5,889,335 - Kuroi , et al. March 30, 1
1999-03-30
Complementary MOS field effect transistor with tunnel effect means
Grant 5,744,845 - Sayama , et al. April 28, 1
1998-04-28

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