| Patent | Date |
|---|
Self Aligned Pattern Formation Post Spacer Etchback In Tight Pitch Configurations
App 20210280422 - Burns; Sean D. ; et al. | 2021-09-09 |
Structure and method for equal substrate to channel height between N and P fin-FETs
Grant 11,043,494 - Clevenger , et al. June 22, 2 | 2021-06-22 |
FinFET gate cut after dummy gate removal
Grant 11,024,715 - Sporre , et al. June 1, 2 | 2021-06-01 |
Photoresist bridging defect removal by reverse tone weak developer
Grant 11,022,891 - Bi , et al. June 1, 2 | 2021-06-01 |
Photoresist bridging defect removal by reverse tone weak developer
Grant 11,022,890 - Bi , et al. June 1, 2 | 2021-06-01 |
Self aligned pattern formation post spacer etchback in tight pitch configurations
Grant 11,018,007 - Burns , et al. May 25, 2 | 2021-05-25 |
Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs
Grant 10,957,583 - Burns , et al. March 23, 2 | 2021-03-23 |
Finfet Gate Cut After Dummy Gate Removal
App 20200243648 - Sporre; John R. ; et al. | 2020-07-30 |
FinFET gate cut after dummy gate removal
Grant 10,600,868 - Sporre , et al. | 2020-03-24 |
Self Aligned Pattern Formation Post Spacer Etchback In Tight Pitch Configurations
App 20200075336 - Burns; Sean D. ; et al. | 2020-03-05 |
Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs
Grant 10,546,774 - Burns , et al. Ja | 2020-01-28 |
Self aligned pattern formation post spacer etchback in tight pitch configurations
Grant 10,529,569 - Burns , et al. J | 2020-01-07 |
Self-aligned Quadruple Patterning (saqp) For Routing Layouts Including Multi-track Jogs
App 20190393082 - Burns; Sean D. ; et al. | 2019-12-26 |
Enhanced self-alignment of vias for a semiconductor device
Grant 10,515,894 - Briggs , et al. Dec | 2019-12-24 |
Structure And Method For Equal Substrate To Channel Height Between N And P Fin-fets
App 20190326289 - CLEVENGER; Lawrence A. ; et al. | 2019-10-24 |
Self aligned conductive lines with relaxed overlay
Grant 10,395,985 - Burns , et al. A | 2019-08-27 |
Structure and method for equal substrate to channel height between N and P fin-FETs
Grant 10,381,348 - Clevenger , et al. A | 2019-08-13 |
Vertical transport FET with two or more gate lengths
Grant 10,361,127 - Karve , et al. | 2019-07-23 |
Vertical Transport Fet With Two Or More Gate Lengths
App 20190206738 - Karve; Gauri ; et al. | 2019-07-04 |
Finfet Gate Cut After Dummy Gate Removal
App 20190189517 - Sporre; John R. ; et al. | 2019-06-20 |
Method and structure for forming a replacement contact
Grant 10,249,533 - Shearer , et al. | 2019-04-02 |
Separate N and P fin etching for reduced CMOS device leakage
Grant 10,229,910 - Chu , et al. | 2019-03-12 |
FinFET gate cut after dummy gate removal
Grant 10,229,854 - Sporre , et al. | 2019-03-12 |
Enhanced self-alignment of vias for asemiconductor device
Grant 10,211,151 - Briggs , et al. Feb | 2019-02-19 |
Self Aligned Pattern Formation Post Spacer Etchback In Tight Pitch Configurations
App 20180350599 - Burns; Sean D. ; et al. | 2018-12-06 |
Self aligned pattern formation post spacer etchback in tight pitch configurations
Grant 10,121,661 - Burns , et al. November 6, 2 | 2018-11-06 |
Self aligned conductive lines with relaxed overlay
Grant 10,083,864 - Burns , et al. September 25, 2 | 2018-09-25 |
Enhanced Self-alignment Of Vias For A Semiconductor Device
App 20180254242 - BRIGGS; Benjamin D. ; et al. | 2018-09-06 |
Photoresist Bridging Defect Removal By Reverse Tone Weak Developer
App 20180239254 - Bi; Zhenxing ; et al. | 2018-08-23 |
Photoresist Bridging Defect Removal By Reverse Tone Weak Developer
App 20180239253 - Bi; Zhenxing ; et al. | 2018-08-23 |
Self Aligned Conductive Lines With Relaxed Overlay
App 20180233408 - Burns; Sean D. ; et al. | 2018-08-16 |
Self-aligned Quadruple Patterning (saqp) For Routing Layouts Including Multi-track Jogs
App 20180233403 - Burns; Sean D. ; et al. | 2018-08-16 |
Self Aligned Pattern Formation Post Spacer Etchback In Tight Pitch Configurations
App 20180197738 - Burns; Sean D. ; et al. | 2018-07-12 |
Structure And Method For Equal Substrate To Channel Height Between N And P Fin-fets
App 20180197858 - CLEVENGER; Lawrence A. ; et al. | 2018-07-12 |
Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs
Grant 9,991,156 - Burns , et al. June 5, 2 | 2018-06-05 |
Separate N And P Fin Etching For Reduced Cmos Device Leakage
App 20180097002 - Chu; Isabel C. ; et al. | 2018-04-05 |
Self aligned pattern formation post spacer etchback in tight pitch configurations
Grant 9,934,970 - Burns , et al. April 3, 2 | 2018-04-03 |
Self aligned conductive lines
Grant 9,911,647 - Burns , et al. March 6, 2 | 2018-03-06 |
Self Aligned Conductive Lines With Relaxed Overlay
App 20180005885 - Burns; Sean D. ; et al. | 2018-01-04 |
Self Aligned Conductive Lines
App 20170358487 - Burns; Sean D. ; et al. | 2017-12-14 |
Self-aligned Quadruple Patterning (saqp) For Routing Layouts Including Multi-track Jogs
App 20170352585 - Burns; Sean D. ; et al. | 2017-12-07 |
Self aligned conductive lines
Grant 9,786,554 - Burns , et al. October 10, 2 | 2017-10-10 |
Method and structure for cut material selection
Grant 9,779,944 - Burns , et al. October 3, 2 | 2017-10-03 |
Separate N and P fin etching for reduced CMOS device leakage
Grant 9,711,507 - Chu , et al. July 18, 2 | 2017-07-18 |
Interconnect structure having large self-aligned vias
Grant 9,659,820 - Zhang , et al. May 23, 2 | 2017-05-23 |
Interconnect structure having large self-aligned vias
Grant 9,658,523 - Zhang , et al. May 23, 2 | 2017-05-23 |
Self aligned conductive lines with relaxed overlay
Grant 9,607,886 - Burns , et al. March 28, 2 | 2017-03-28 |
Interconnect Structure Having Large Self-aligned Vias
App 20160247722 - Zhang; John H. ; et al. | 2016-08-25 |
Interconnect structure having large self-aligned vias
Grant 9,391,020 - Zhang , et al. July 12, 2 | 2016-07-12 |
Interconnect Structure Having Large Self-aligned Vias
App 20150279780 - Zhang; John H. ; et al. | 2015-10-01 |
Interconnect Structure Having Large Self-aligned Vias
App 20150279784 - Zhang; John H. ; et al. | 2015-10-01 |
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