Satoh; Issei

Patent Applications and Registrations

Patent applications and USPTO patent grants for Satoh; Issei.The latest application filed is for "ta-nb alloy powder and anode element for solid electrolytic capacitor".

Company Profile

1.30.34

Satoh; Issei - Kobe JP
SATOH; Issei - Kobe-shi JP
Satoh; Issei - Itami N/A JP
SATOH; Issei - Itami-shi JP
Satoh; Issei - Hyogo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Ta--Nb alloy powder and anode element for solid electrolytic capacitor Grant 10,329,644 - Maeshima , et al.	2019-06-25
Ta-Nb ALLOY POWDER AND ANODE ELEMENT FOR SOLID ELECTROLYTIC CAPACITOR App 20170283916 - MAESHIMA; Takayuki ; et al.	2017-10-05
Ta Powder, Production Method Therefor, And Ta Granulated Powder App 20160104580 - MAESHIMA; Takayuki ; et al.	2016-04-14
Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layer Grant 9,184,228 - Seki , et al. November 10, 2	2015-11-10
Method of Manufacturing GaN-Based Film and Composite Substrate Used Therefor App 20150118830 - SATOH; Issei ; et al.	2015-04-30
Method of manufacturing GaN-based film and composite substrate used therefor Grant 8,962,365 - Satoh , et al. February 24, 2	2015-02-24
Si.sub.(1-V-W-X)C.sub.WAl.sub.XN.sub.V substrate, and epitaxial wafer Grant 8,937,339 - Satoh , et al. January 20, 2	2015-01-20
Method of manufacturing semiconductor wafer, and composite base and composite substrate for use in that method Grant 8,748,890 - Seki , et al. June 10, 2	2014-06-10
Process for producing Si.sub.(1-v-w-x)C.sub.wAl.sub.xN.sub.v base material, process for producing epitaxial wafer, Si.sub.(1-v-w-x)C.sub.wAl.sub.xN.sub.v base material, and epitaxial wafer Grant 8,715,414 - Satoh , et al. May 6, 2	2014-05-06
Method of manufacturing GaN-based film Grant 8,697,564 - Fujiwara , et al. April 15, 2	2014-04-15
Method of manufacturing GaN-based film Grant 8,697,550 - Satoh , et al. April 15, 2	2014-04-15
Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystal Grant 8,613,802 - Satoh , et al. December 24, 2	2013-12-24
Compound semiconductor single-crystal manufacturing device and manufacturing method Grant 8,591,653 - Satoh , et al. November 26, 2	2013-11-26
Method of manufacturing a Si.sub.(1-v-w-x)C.sub.wAl.sub.xN.sub.v substrate, method of manufacturing an epitaxial wafer, Si.sub.(1-v-w-x)C.sub.wAl.sub.xN.sub.v substrate, and epitaxial wafer Grant 8,540,817 - Satoh , et al. September 24, 2	2013-09-24
Method Of Manufacturing Semiconductor Wafer, And Composite Base And Composite Substrate For Use In That Method App 20130221492 - SEKI; Yuki ; et al.	2013-08-29
Method of manufacturing semiconductor wafer, and composite base and composite substrate for use in that method Grant 8,497,185 - Seki , et al. July 30, 2	2013-07-30
Protective-film-attached Composite Substrate And Method Of Manufacturing Semiconductor Device App 20130168693 - Satoh; Issei ; et al.	2013-07-04
METHOD OF MANUFACTURING GaN-BASED FILM AND COMPOSITE SUBSTRATE USED THEREFOR App 20130149847 - Satoh; Issei ; et al.	2013-06-13
PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv BASE MATERIAL, AND EPITAXIAL WAFER App 20130105858 - SATOH; Issei ; et al.	2013-05-02
METHOD OF MANUFACTURING GaN-BASED FILM App 20130040442 - Satoh; Issei ; et al.	2013-02-14
Group Iii Nitride Composite Substrate App 20130032928 - Satoh; Issei ; et al.	2013-02-07
Thin film of aluminum nitride and process for producing the thin film of aluminum nitride Grant 8,367,577 - Satoh , et al. February 5, 2	2013-02-05
AlxGa.sub.(1-x)N single crystal, method of producing AlxGa.sub.(1-x)N single crystal, and optical lens Grant 8,363,326 - Arakawa , et al. January 29, 2	2013-01-29
Process for producing Si.sub.(1-v-w-x)C.sub.wAl.sub.xN.sub.v base material, process for producing epitaxial wafer, Si.sub.(1-v-w-x)C.sub.wAl.sub.xN.sub.v base material, and epitaxial wafer Grant 8,357,597 - Satoh , et al. January 22, 2	2013-01-22
Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystal Grant 8,293,011 - Miyanaga , et al. October 23, 2	2012-10-23
Composite Base Including Sintered Base And Base Surface Flattening Layer, And Composite Substrate Including That Composite Base And Semiconductor Crystalline Layer App 20120228612 - Seki; Yuki ; et al.	2012-09-13
Method Of Manufacturing Semiconductor Wafer, And Composite Base And Composite Substrate For Use In That Method App 20120228613 - SEKI; Yuki ; et al.	2012-09-13
Wavelength conversion element and method for manufacturing wavelength conversion element Grant 8,259,386 - Satoh , et al. September 4, 2	2012-09-04
METHOD OF MANUFACTURING GaN-BASED FILM App 20120118222 - FUJIWARA; Shinsuke ; et al.	2012-05-17
METHOD OF MANUFACTURING GaN-BASED FILM App 20120122301 - FUJIWARA; Shinsuke ; et al.	2012-05-17
Nitride Semiconductor Crystal Manufacturing Method, Nitride Semiconductor Crystal, and Nitride Semiconductor Crystal Manufacturing Apparatus App 20110265709 - Satoh; Issei ; et al.	2011-11-03
Wavelength converter manufacturing method and wavelength converter Grant 7,995,267 - Satoh , et al. August 9, 2	2011-08-09
Nitride Semiconductor Crystal Manufacturing Apparatus, Nitride Semiconductor Crystal Manufacturing Method, and Nitride Semiconductor Crystal App 20110171462 - Satoh; Issei ; et al.	2011-07-14
Wavelength Conversion Element And Method For Manufacturing Wavelength Conversion Element App 20110134509 - Satoh; Issei ; et al.	2011-06-09
AlGaN BULK CRYSTAL MANUFACTURING METHOD AND AlGaN SUBSTRATE MANUFACTURING METHOD App 20110114016 - Miyanaga; Michimasa ; et al.	2011-05-19
AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL LENS App 20110109973 - Arakawa; Satoshi ; et al.	2011-05-12
Method For Producing Group Iii-nitride Crystal And Group Iii-nitride Crystal App 20110110840 - Miyanaga; Michimasa ; et al.	2011-05-12
AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL COMPONENT App 20110104438 - Arakawa; Satoshi ; et al.	2011-05-05
AlxGa1-xN Single Crystal and Electromagnetic Wave Transmission Body App 20110076453 - Arakawa; Satoshi ; et al.	2011-03-31
PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, SI(1-v-w-x)CwAlxNv BASE MATERIAL, AND EPITAXIAL WAFER App 20110042788 - Satoh; Issei ; et al.	2011-02-24
Method of Growing AlN Crystals, and AlN Laminate App 20110042684 - Tanizaki; Keisuke ; et al.	2011-02-24
METHOD OF MANUFACTURING A Si(1-v-w-x)CwAlxNv SUBSTRATE, METHOD OF MANUFACTURING AN EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv SUBSTRATE, AND EPITAXIAL WAFER App 20110039071 - Satoh; Issei ; et al.	2011-02-17
PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv BASE MATERIAL, AND EPITAXIAL WAFER App 20110031534 - Satoh; Issei ; et al.	2011-02-10
Compound Semiconductor Single-Crystal Manufacturing Device and Manufacturing Method App 20100319614 - Satoh; Issei ; et al.	2010-12-23
AlN Crystal and Method of Its Growth App 20100242833 - Satoh; Issei ; et al.	2010-09-30
Thin Film of Aluminum Nitride and Process for Producing the Thin Film of Aluminum Nitride App 20100209622 - Satoh; Issei ; et al.	2010-08-19
Wavelength Converter Manufacturing Method and Wavelength Converter App 20100033806 - Satoh; Issei ; et al.	2010-02-11
Method For Growing Group Iii Nitride Semiconductor Crystal And Growing Device For Group Iii Nitride Semiconductor Crystal App 20090158994 - Miyanaga; Michimasa ; et al.	2009-06-25

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