| Patent | Date |
|---|
Trench MOS schottky diode and method for producing same
Grant 11,456,388 - Sasaki , et al. September 27, 2 | 2022-09-27 |
Diode
Grant 11,355,594 - Sasaki June 7, 2 | 2022-06-07 |
Semiconductor substrate, semiconductor element and method for producing semiconductor substrate
Grant 11,264,241 - Kuramata , et al. March 1, 2 | 2022-03-01 |
Method For Growing Beta-ga2o3-based Single Crystal Film, And Crystalline Layered Structure
App 20210404086 - GOTO; Ken ; et al. | 2021-12-30 |
Schottky Barrier Diode
App 20210343879 - ARIMA; Jun ; et al. | 2021-11-04 |
Schottky Barrier Diode
App 20210343880 - ARIMA; Jun ; et al. | 2021-11-04 |
Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE
App 20210238766 - SASAKI; Kohei | 2021-08-05 |
Trench MOS Schottky diode
Grant 11,081,598 - Sasaki , et al. August 3, 2 | 2021-08-03 |
Schottky barrier diode
Grant 11,043,602 - Sasaki , et al. June 22, 2 | 2021-06-22 |
Schottky Barrier Diode
App 20210167225 - ARIMA; Jun ; et al. | 2021-06-03 |
Schottky Barrier Diode
App 20210151611 - SASAKI; Kohei ; et al. | 2021-05-20 |
Schottky barrier diode
Grant 11,011,653 - Sasaki , et al. May 18, 2 | 2021-05-18 |
Schottky Barrier Diode
App 20210119062 - ARIMA; Jun ; et al. | 2021-04-22 |
Trench Mos Schottky Diode And Method For Producing Same
App 20210020789 - SASAKI; Kohei ; et al. | 2021-01-21 |
Semiconductor element and crystalline laminate structure
Grant 10,861,945 - Sasaki , et al. December 8, 2 | 2020-12-08 |
Trench MOS-type Schottky diode
Grant 10,825,935 - Sasaki , et al. November 3, 2 | 2020-11-03 |
Field Effect Transistor
App 20200235234 - SASAKI; Kohei | 2020-07-23 |
Semiconductor Substrate, Semiconductor Element And Method For Producing Semiconductor Substrate
App 20200168460 - KURAMATA; Akito ; et al. | 2020-05-28 |
Diode
App 20200168711 - SASAKI; Kohei | 2020-05-28 |
Ga2o3-based Semiconductor Device
App 20200144377 - HIGASHIWAKI; Masataka ; et al. | 2020-05-07 |
GA2O3-based single crystal substrate, and production method therefor
Grant 10,633,761 - Sasaki | 2020-04-28 |
Trench Mos Schottky Diode
App 20200066921 - SASAKI; Kohei ; et al. | 2020-02-27 |
Schottky Barrier Diode
App 20190363197 - SASAKI; Kohei ; et al. | 2019-11-28 |
Ga.sub.2O.sub.3-based crystal film, and crystal multilayer structure
Grant 10,358,742 - Sasaki , et al. | 2019-07-23 |
Trench Mos-type Schottky Diode
App 20190148563 - SASAKI; Kohei ; et al. | 2019-05-16 |
Ga.sub.2O.sub.3-based semiconductor element
Grant 10,249,767 - Sasaki , et al. | 2019-04-02 |
Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structure
Grant 10,230,007 - Sasaki , et al. | 2019-03-12 |
Ga2o3-based Single Crystal Substrate, And Production Method Therefor
App 20190062942 - SASAKI; Kohei | 2019-02-28 |
High voltage withstand Ga2O3-based single crystal schottky barrier diode
Grant 10,199,512 - Sasaki , et al. Fe | 2019-02-05 |
Ga2O3-based single crystal substrate, and production method therefor
Grant 10,161,058 - Sasaki Dec | 2018-12-25 |
Ga2O3 SEMICONDUCTOR ELEMENT
App 20180350967 - SASAKI; Kohei ; et al. | 2018-12-06 |
High Withstand Voltage Schottky Barrier Diode
App 20180254355 - SASAKI; Kohei ; et al. | 2018-09-06 |
METHOD OF GROWING Ga2O3-BASED CRYSTAL FILM, AND CRYSTAL MULTILAYER STRUCTURE
App 20170350037 - SASAKI; Kohei ; et al. | 2017-12-07 |
Semiconductor Element And Production Method For Same
App 20170288061 - SASAKI; Kohei ; et al. | 2017-10-05 |
Semiconductor Element And Crystalline Laminate Structure
App 20170278933 - SASAKI; Kohei ; et al. | 2017-09-28 |
Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE
App 20170233892 - SASAKI; Kohei | 2017-08-17 |
Semiconductor Element, Method For Manufacturing Same, Semiconductor Substrate, And Crystal Laminate Structure
App 20170213918 - SASAKI; Kohei ; et al. | 2017-07-27 |
Crystal laminate structure and method for producing same
Grant 9,716,004 - Sasaki July 25, 2 | 2017-07-25 |
Substrate for epitaxial growth, and crystal laminate structure
Grant 9,685,515 - Sasaki June 20, 2 | 2017-06-20 |
Method for producing Ga.sub.2O.sub.3 based crystal film
Grant 9,657,410 - Sasaki May 23, 2 | 2017-05-23 |
Method for controlling donor concentration in Ga.sub.2O.sub.3-based and method for forming ohmic contact
Grant 9,611,567 - Sasaki , et al. April 4, 2 | 2017-04-04 |
Ga2O3 SEMICONDUCTOR ELEMENT
App 20160365418 - Sasaki; Kohei ; et al. | 2016-12-15 |
Ga2O3 BASED CRYSTAL FILM FORMING METHOD, AND CRYSTAL LAMINATED STRUCTURE
App 20160312380 - SASAKI; Kohei | 2016-10-27 |
Ga2o3-based Semiconductor Element
App 20160300953 - Sasaki; Kohei ; et al. | 2016-10-13 |
Ga.sub.2O.sub.3 semiconductor element
Grant 9,461,124 - Sasaki , et al. October 4, 2 | 2016-10-04 |
Telephone Reservation System
App 20160283868 - OKU; Kyuta ; et al. | 2016-09-29 |
METHOD FOR GROWING BETA-Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTALLINE LAYERED STRUCTURE
App 20160265137 - GOTO; Ken ; et al. | 2016-09-15 |
Ga2O3 semiconductor element
Grant 9,437,689 - Sasaki , et al. September 6, 2 | 2016-09-06 |
Substrate For Epitaxial Growth, And Crystal Laminate Structure
App 20160233307 - Sasaki; Kohei | 2016-08-11 |
Ga2O3 SEMICONDUCTOR ELEMENT
App 20160141372 - SASAKI; Kohei ; et al. | 2016-05-19 |
METHOD OF FORMING HIGH-RESISTIVITY REGION IN Ga2O3-BASED SINGLE CRYSTAL, AND CRYSTAL LAMINATE STRUCTURE AND SEMICONDUCTOR ELEMENT
App 20160042949 - SASAKI; Kohei ; et al. | 2016-02-11 |
Method of forming Ga2O3-based crystal film and crystal multilayer structure
Grant 9,245,749 - Sasaki , et al. January 26, 2 | 2016-01-26 |
Ga2O3 SINGLE CRYSTAL SUBSTRATE, AND PRODUCTION METHOD THEREFOR
App 20160017512 - SASAKI; Kohei | 2016-01-21 |
METHOD FOR CONTROLLING DONOR CONCENTRATION IN Ga2O3 SINGLE CRYSTAL BODY, AND METHOD FOR FORMING OHMIC CONTACT
App 20160002823 - SASAKI; Kohei ; et al. | 2016-01-07 |
Method for controlling concentration of donor in GA.sub.2O.sub.3-based single crystal
Grant 9,202,876 - Sasaki December 1, 2 | 2015-12-01 |
Substrate for epitaxial growth, and crystal laminate structure
Grant 9,142,623 - Sasaki September 22, 2 | 2015-09-22 |
Method of Forming Ga2O3-Based Crystal Film and Crystal Multilayer Structure
App 20150179445 - SASAKI; Kohei ; et al. | 2015-06-25 |
Method For Controlling Concentration Of Donor In Ga2o3-based Single Crystal
App 20150115279 - Sasaki; Kohei | 2015-04-30 |
Method for controlling concentration of donor in GA.sub.2O.sub.3--based single crystal
Grant 8,951,897 - Sasaki February 10, 2 | 2015-02-10 |
Method For Producing Ga2o3 Crystal Film
App 20140331919 - Sasaki; Kohei | 2014-11-13 |
Substrate For Epitaxial Growth, And Crystal Laminate Structure
App 20140239452 - Sasaki; Kohei | 2014-08-28 |
Ga2O3 SEMICONDUCTOR ELEMENT
App 20140217469 - Sasaki; Kohei ; et al. | 2014-08-07 |
Ga2O3 SEMICONDUCTOR ELEMENT
App 20140217470 - Sasaki; Kohei ; et al. | 2014-08-07 |
Crystal Laminate Structure And Method For Producing Same
App 20140217554 - Sasaki; Kohei | 2014-08-07 |
Ga2O3 SEMICONDUCTOR ELEMENT
App 20140217405 - Sasaki; Kohei ; et al. | 2014-08-07 |
Method For Controlling Concentration Of Donor In Ga2o3-based Single Crystal
App 20140220734 - Sasaki; Kohei | 2014-08-07 |
Ga2O3 SEMICONDUCTOR ELEMENT
App 20140217471 - Sasaki; Kohei ; et al. | 2014-08-07 |
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