| Patent | Date |
|---|
Semiconductor device including an anode contact region having a varied doping concentration
Grant 11,444,158 - Sandow , et al. September 13, 2 | 2022-09-13 |
RC IGBT with an IGBT section and a diode section
Grant 11,398,472 - Laven , et al. July 26, 2 | 2022-07-26 |
Reverse-conducting igbt having a reduced forward recovery voltage
Grant 11,296,213 - Sandow , et al. April 5, 2 | 2022-04-05 |
Voltage-Controlled Switching Device with Resistive Path
App 20220102478 - Sandow; Christian Philipp ; et al. | 2022-03-31 |
Power semiconductor device
Grant 11,276,772 - Mauder , et al. March 15, 2 | 2022-03-15 |
Power semiconductor device
Grant 11,264,459 - Baburske , et al. March 1, 2 | 2022-03-01 |
Power Semiconductor Device Having Nanometer-Scale Structure
App 20220059650 - Mauder; Anton ; et al. | 2022-02-24 |
Diode Including a Plurality of Trenches
App 20220045221 - Sandow; Christian Philipp ; et al. | 2022-02-10 |
Semiconductor Device Including a Plurality of Trenches
App 20220045200 - Sandow; Christian Philipp ; et al. | 2022-02-10 |
Vertical Power Semiconductor Device And Manufacturing Method
App 20210359117 - Pfirsch; Frank Dieter ; et al. | 2021-11-18 |
Power semiconductor device having fully depleted channel regions
Grant 11,171,202 - Mauder , et al. November 9, 2 | 2021-11-09 |
Rc Igbt
App 20210296479 - Pfirsch; Frank Dieter ; et al. | 2021-09-23 |
Reverse-Conducting IGBT Having a Reduced Forward Recovery Voltage
App 20210296474 - Sandow; Christian Philipp ; et al. | 2021-09-23 |
Insulated gate bipolar transistor device having a fin structure
Grant 11,038,016 - Sandow , et al. June 15, 2 | 2021-06-15 |
Semiconductor Device Including Insulated Gate Bipolar Transistor
App 20210175329 - Sandow; Christian Philipp ; et al. | 2021-06-10 |
Power semiconductor switch with improved controllability
Grant 11,011,629 - Beninger-Bina , et al. May 18, 2 | 2021-05-18 |
Insulated gate bipolar transistor having first and second field stop zone portions and manufacturing method
Grant 11,004,963 - Spulber , et al. May 11, 2 | 2021-05-11 |
Semiconductor Device Including A Transistor With One Or More Barrier Regions
App 20210134977 - Leendertz; Caspar ; et al. | 2021-05-06 |
RC IGBT with an IGBT Section and a Diode Section
App 20210083081 - Laven; Johannes Georg ; et al. | 2021-03-18 |
Diode with Structured Barrier Region
App 20210083051 - Laven; Johannes Georg ; et al. | 2021-03-18 |
IGBT with fully depletable n- and p-channel regions
Grant 10,950,718 - Mauder , et al. March 16, 2 | 2021-03-16 |
Semiconductor device comprising a barrier region
Grant 10,923,578 - Leendertz , et al. February 16, 2 | 2021-02-16 |
IGBT with dV/dt Controllability
App 20210043759 - Philippou; Alexander ; et al. | 2021-02-11 |
IGBT with fully depletable n- and p-channel regions
Grant 10,903,347 - Mauder , et al. January 26, 2 | 2021-01-26 |
IGBT with dV/dt controllability
Grant 10,840,362 - Philippou , et al. November 17, 2 | 2020-11-17 |
Insulated Gate Bipolar Transistor Device Having a Fin Structure
App 20200350402 - Sandow; Christian Philipp ; et al. | 2020-11-05 |
Insulated gate bipolar Transistor device having a fin structure
Grant 10,748,995 - Sandow , et al. A | 2020-08-18 |
Power Semiconductor Device
App 20200259007 - A1 | 2020-08-13 |
Power Semiconductor Device
App 20200194550 - Baburske; Roman ; et al. | 2020-06-18 |
Power semiconductor device having different channel regions
Grant 10,672,767 - Mauder , et al. | 2020-06-02 |
Power Semiconductor Switch with Improved Controllability
App 20200168727 - Beninger-Bina; Markus ; et al. | 2020-05-28 |
Power semiconductor transistor
Grant 10,665,706 - Mauder , et al. | 2020-05-26 |
Power semiconductor device with dV/dt controllability
Grant 10,644,141 - Leendertz , et al. | 2020-05-05 |
Power Semiconductor Device Having Different Channel Regions
App 20190371794 - Mauder; Anton ; et al. | 2019-12-05 |
Method for self adaption of gate current controls by capacitance measurement of a power transistor
Grant 10,469,057 - Frank , et al. No | 2019-11-05 |
Insulated Gate Bipolar Transistor Device Having a Fin Structure
App 20190333991 - Sandow; Christian Philipp ; et al. | 2019-10-31 |
Power semiconductor device having cells with channel regions of different conductivity types
Grant 10,453,918 - Mauder , et al. Oc | 2019-10-22 |
Power Semiconductor Transistor
App 20190296135 - Mauder; Anton ; et al. | 2019-09-26 |
Power Semiconductor Device Having Fully Depleted Channel Regions
App 20190267447 - Mauder; Anton ; et al. | 2019-08-29 |
Power semiconductor device having different channel regions
Grant 10,396,074 - Mauder , et al. A | 2019-08-27 |
Insulated gate bipolar transistor device having a fin structure
Grant 10,388,734 - Sandow , et al. A | 2019-08-20 |
Power semiconductor device having fully depleted channel regions
Grant 10,367,057 - Mauder , et al. July 30, 2 | 2019-07-30 |
Power Semiconductor Device with dV/dt Controllability
App 20190214490 - Leendertz; Caspar ; et al. | 2019-07-11 |
Power semiconductor device having fully depleted channel regions
Grant 10,340,336 - Mauder , et al. | 2019-07-02 |
Semiconductor Device Comprising a Barrier Region
App 20190189772 - Leendertz; Caspar ; et al. | 2019-06-20 |
IGBT with Fully Depletable n- and p-Channel Regions
App 20190189789 - Mauder; Anton ; et al. | 2019-06-20 |
Power semiconductor transistor having fully depleted channel region
Grant 10,326,009 - Mauder , et al. | 2019-06-18 |
Insulated Gate Bipolar Transistor Having First and Second Field Stop Zone Portions and Manufacturing Method
App 20190165151 - Spulber; Oana Julia ; et al. | 2019-05-30 |
IGBT with dV/dt Controllability
App 20190123186 - Philippou; Alexander ; et al. | 2019-04-25 |
Power Semiconductor Device Having Fully Depleted Channel Regions
App 20190109188 - Mauder; Anton ; et al. | 2019-04-11 |
Power Semiconductor Device Having Cells with Channel Regions of Different Conductivity Types
App 20190081142 - Mauder; Anton ; et al. | 2019-03-14 |
Power Semiconductor Device Having Different Channel Regions
App 20180366464 - Mauder; Anton ; et al. | 2018-12-20 |
Power semiconductor device having fully depleted channel region
Grant 10,141,404 - Mauder , et al. Nov | 2018-11-27 |
Power semiconductor device having fully depleted channel regions
Grant 10,134,835 - Mauder , et al. November 20, 2 | 2018-11-20 |
Power semiconductor device having fully depleted channel regions
Grant 10,083,960 - Mauder , et al. September 25, 2 | 2018-09-25 |
Insulated Gate Bipolar Transistor Device Having a Fin Structure
App 20180269285 - Sandow; Christian Philipp ; et al. | 2018-09-20 |
Power semiconductor device having fully depleted channel regions
Grant 9,997,517 - Mauder , et al. June 12, 2 | 2018-06-12 |
Insulated gate bipolar transistor device having a fin structure
Grant 9,978,837 - Sandow , et al. May 22, 2 | 2018-05-22 |
Power Semiconductor Transistor Having Fully Depleted Channel Region
App 20180138301 - Mauder; Anton ; et al. | 2018-05-17 |
Power Semiconductor Device Having Fully Depleted Channel Region
App 20180006115 - Mauder; Anton ; et al. | 2018-01-04 |
Power Semiconductor Device Having Fully Depleted Channel Regions
App 20180006027 - Mauder; Anton ; et al. | 2018-01-04 |
Power Semiconductor Device Having Fully Depleted Channel Regions
App 20180006109 - Mauder; Anton ; et al. | 2018-01-04 |
Power Semiconductor Device Having Fully Depleted Channel Regions
App 20180006110 - Mauder; Anton ; et al. | 2018-01-04 |
Power Semiconductor Device Having Fully Depleted Channel Regions
App 20180006029 - Mauder; Anton ; et al. | 2018-01-04 |
Power semiconductor transistor having fully depleted channel region
Grant 9,859,408 - Mauder , et al. January 2, 2 | 2018-01-02 |
Semiconductor device with a reduced band gap zone
Grant 9,859,272 - Schulze , et al. January 2, 2 | 2018-01-02 |
Semiconductor devices
Grant 9,819,341 - Sandow , et al. November 14, 2 | 2017-11-14 |
IGBT having at least one first type transistor cell and reduced feedback capacitance
Grant 9,741,795 - Sandow , et al. August 22, 2 | 2017-08-22 |
Power Semiconductor Transistor Having Fully Depleted Channel Region
App 20170117397 - Mauder; Anton ; et al. | 2017-04-27 |
Insulated Gate Bipolar Transistor Device Having a Fin Structure
App 20170084692 - Sandow; Christian Philipp ; et al. | 2017-03-23 |
Semiconductor Devices
App 20170033794 - Sandow; Christian Philipp ; et al. | 2017-02-02 |
Semiconductor Device with a Reduced Band Gap Zone
App 20170025408 - Schulze; Hans-Joachim ; et al. | 2017-01-26 |
Insulated gate bipolar transistor device, semiconductor device and method for forming said devices
Grant 9,525,029 - Sandow , et al. December 20, 2 | 2016-12-20 |
IGBT Having at Least One First Type Transistor Cell and Reduced Feedback Capacitance
App 20160005818 - Sandow; Christian Philipp ; et al. | 2016-01-07 |
Insulated Gate Bipolar Transistor Device, Semiconductor Device and Method for Forming Said Devices
App 20150380533 - Sandow; Christian Philipp ; et al. | 2015-12-31 |
IGBT with reduced feedback capacitance
Grant 9,166,027 - Sandow , et al. October 20, 2 | 2015-10-20 |
IGBT with Reduced Feedback Capacitance
App 20150091053 - Sandow; Christian Philipp ; et al. | 2015-04-02 |
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