Patent | Date |
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Method of manufacturing a semiconductor integrated circuit device Grant 7,445,983 - Fujishima , et al. November 4, 2 | 2008-11-04 |
Method of manufacturing a semiconductor integrated circuit device Grant 7,445,982 - Fujishima , et al. November 4, 2 | 2008-11-04 |
Method of manufacturing a semiconductor integrated circuit device Grant 7,344,935 - Fujishima , et al. March 18, 2 | 2008-03-18 |
Method of manufacturing a semiconductor integrated circuit device App 20070298563 - Fujishima; Naoto ;   et al. | 2007-12-27 |
Method of manufacturing a semiconductor integrated circuit device App 20070298562 - Fujishima; Naoto ;   et al. | 2007-12-27 |
Phase shifted transmitter architecture for communication systems Grant 7,260,157 - Hagh , et al. August 21, 2 | 2007-08-21 |
Super junction / resurf LDMOST (SJR-LDMOST) Grant 7,023,050 - Salama , et al. April 4, 2 | 2006-04-04 |
Trench-type MOSFET having a reduced device pitch and on-resistance Grant 7,005,352 - Fujishima , et al. February 28, 2 | 2006-02-28 |
Method of manufacturing a semiconductor integrated circuit device App 20050142713 - Fujishima, Naoto ;   et al. | 2005-06-30 |
Low-voltage low-power high-linearity active CMOS mixer App 20050124311 - Mahmoudi, Farsheed ;   et al. | 2005-06-09 |
Super junction / resurf ldmost (sjr-LDMOST) App 20050017300 - Salama, C. Andre T. ;   et al. | 2005-01-27 |
Trench-type MOSFET having a reduced device pitch and on-resistance App 20040256666 - Fujishima, Naoto ;   et al. | 2004-12-23 |
Semiconductor integrated circuit device and method of manufacturing the same Grant 6,800,904 - Fujishima , et al. October 5, 2 | 2004-10-05 |
Trench-type MOSFET having a reduced device pitch and on-resistance Grant 6,781,197 - Fujishima , et al. August 24, 2 | 2004-08-24 |
Superjunction LDMOST using an insulator substrate for power integrated circuits Grant 6,768,180 - Salama , et al. July 27, 2 | 2004-07-27 |
Phase shifted transmitter architecture for communication systems App 20040101065 - Hagh, Sotoudeh Hamedi ;   et al. | 2004-05-27 |
Semiconductor integrated circuit device and method of manufacturing the same App 20040075138 - Fujishima, Naoto ;   et al. | 2004-04-22 |
Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing same App 20040014263 - Fujishima, Naoto ;   et al. | 2004-01-22 |
Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing same Grant 6,664,163 - Fujishima , et al. December 16, 2 | 2003-12-16 |
Superjunction LDMOST using an insulator substrate for power integrated circuits App 20030190789 - Salama, C. Andre T. ;   et al. | 2003-10-09 |
Trench-type MOSFET having a reduced device pitch and on-resistance App 20020158287 - Fujishima, Naoto ;   et al. | 2002-10-31 |
Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing same App 20020113263 - Fujishima, Naoto ;   et al. | 2002-08-22 |
Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing same Grant 6,316,807 - Fujishima , et al. November 13, 2 | 2001-11-13 |
Semiconductor LDMOS device with upper and lower passages Grant 4,922,327 - Mena , et al. May 1, 1 | 1990-05-01 |