SAKURADA; Masahiro

Patent Applications and Registrations

Patent applications and USPTO patent grants for SAKURADA; Masahiro.The latest application filed is for "method for evaluating edge shape of silicon wafer, apparatus for evaluating thereof, silicon wafer, method for selecting and met".

Company Profile

1.19.21

SAKURADA; Masahiro - Annaka-shi JP
Sakurada; Masahiro - Annaka JP
Sakurada; Masahiro - Fukushima JP
Sakurada, Masahiro - Nishishirakawa-gun Fukushima JP
Sakurada, Masahiro - Fukushima-ken JP
Sakurada; Masahiro - Tokyo JP
Sakurada; Masahiro - Koriyama JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method For Evaluating Edge Shape Of Silicon Wafer, Apparatus For Evaluating Thereof, Silicon Wafer, Method For Selecting And Met App 20200240929 - SAKURADA; Masahiro ; et al.	2020-07-30
Silicon epitaxial wafer and method of producing silicon epitaxial wafer Grant 10,355,092 - Sakurada July 16, 2	2019-07-16
Method of producing silicon single crystal Grant 9,938,634 - Sakurada , et al. April 10, 2	2018-04-10
Method For Heat-treating Silicon Single Crystal Wafer App 20170253995 - QU; Wei Feng ; et al.	2017-09-07
Epitaxial wafer and manufacturing method thereof Grant 9,425,345 - Hoshi , et al. August 23, 2	2016-08-23
Silicon Epitaxial Wafer And Method Of Producing Silicon Epitaxial Wafer App 20160126318 - SAKURADA; Masahiro	2016-05-05
Method Of Producing Silicon Single Crystal App 20160068992 - SAKURADA; Masahiro ; et al.	2016-03-10
Epitaxial Wafer And Manufacturing Method Thereof App 20140374861 - Hoshi; Ryoji ; et al.	2014-12-25
Method of manufacturing single crystal Grant 8,147,611 - Sakurada , et al. April 3, 2	2012-04-03
Quartz Glass Crucible for Pulling Silicon Single Crystal and Method of Manufacturing Quartz Glass Crucible for Pulling Silicon Single Crystal App 20100139549 - Sakurada; Masahiro ; et al.	2010-06-10
Method of Manufacturing Single Crystal App 20100126409 - Sakurada; Masahiro ; et al.	2010-05-27
Soi wafer and a method for producing the same Grant 7,518,187 - Sakurada April 14, 2	2009-04-14
Soi wafer and a method for producing the same Grant 7,407,866 - Sakurada , et al. August 5, 2	2008-08-05
Method for producing a single crystal and a single crystal Grant 7,384,477 - Sakurada , et al. June 10, 2	2008-06-10
An Apparatus for Producing a Single Crystal App 20080035050 - Sakurada; Masahiro	2008-02-14
Method for producing a single crystal and a single crystal Grant 7,323,048 - Sakurada , et al. January 29, 2	2008-01-29
Annealed wafer and method for manufacturing the same Grant 7,311,888 - Takeno , et al. December 25, 2	2007-12-25
Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal Grant 7,294,196 - Sakurada , et al. November 13, 2	2007-11-13
Graphite heater for producing single crystal, apparatus for producing single crystal, and method for producing single crystal Grant 7,258,744 - Sakurada , et al. August 21, 2	2007-08-21
Method for producing single crystal and single crystal Grant 7,226,507 - Mitamura , et al. June 5, 2	2007-06-05
Method of producing P-doped silicon single crystal and P-doped N-type silicon single crystal wafer Grant 7,214,268 - Sakurada , et al. May 8, 2	2007-05-08
Process for producing single crystal and single crystal App 20070017433 - Sakurada; Masahiro ; et al.	2007-01-25
SOI wafer and a method for producing an SOI wafer Grant 7,129,123 - Sakurada , et al. October 31, 2	2006-10-31
Method for producing single crystal and single crystal App 20060174819 - Mitamura; Nobuaki ; et al.	2006-08-10
Process for producing single crystal and single crystal App 20060130740 - Sakurada; Masahiro	2006-06-22
Soi wafer and production method therefor App 20060113594 - Sakurada; Masahiro ; et al.	2006-06-01
Soi wafer and method for manufacturing same App 20060086313 - Sakurada; Masahiro	2006-04-27
Annealed wafer and anneald wafer manufacturing method App 20060075957 - Takeno; Hiroshi ; et al.	2006-04-13
Process for producing p doped silicon single crystal and p doped n type silicon single crystal wafer App 20060065184 - Sakurada; Masahiro ; et al.	2006-03-30
Silicon single crystal wafer and epitaxial wafer, and method for producing silicon single crystal App 20050252441 - Sakurada, Masahiro ; et al.	2005-11-17
Graphite heater for producing single crystal, single crystal productin system and single crystal productin method App 20050205004 - Sakurada, Masahiro ; et al.	2005-09-22
Silicon single crystal wafer and method for producing silicon single crystal Grant 6,913,646 - Sakurada , et al. July 5, 2	2005-07-05
Silicon single crystal wafer and method for manufacturing the same Grant 6,893,499 - Fusegawa , et al. May 17, 2	2005-05-17
Soi wafer and method for manufacturing soi wafer App 20050064632 - Sakurada, Masahiro ; et al.	2005-03-24
Silicon single crystal wafer and method for producing silicon single crystal App 20030116082 - Sakurada, Masahiro ; et al.	2003-06-26
Silicon single crystal wafer and method for manufacturing the same App 20030106484 - Fusegawa, Izumi ; et al.	2003-06-12
Silicon single crystal wafer and a method for producing it App 20010000093 - Sakurada, Masahiro ; et al.	2001-04-05
Method for producing silicon monocrystal and silicon monocrystal wafer Grant 6,174,364 - Yamanaka , et al. January 16, 2	2001-01-16
Apparatus for manufacturing crystals according to the Czochralski method, and crystals manufactured by the manufacturing method Grant 5,948,163 - Sakurada , et al. September 7, 1	1999-09-07
Apparatus and method for the uniform distribution of crystal defects upon a silicon single crystal Grant 5,704,973 - Sakurada , et al. January 6, 1	1998-01-06