loadpatents
name:-0.0063209533691406
name:-0.018826961517334
name:-0.00044894218444824
Sakudo; Noriyuki Patent Filings

Sakudo; Noriyuki

Patent Applications and Registrations

Patent applications and USPTO patent grants for Sakudo; Noriyuki.The latest application filed is for "charge neutralizing device".

Company Profile
0.17.3
  • Sakudo; Noriyuki - Ishikawa JP
  • Sakudo; Noriyuki - Kanazawa JP
  • Sakudo, Noriyuki - Kanazawa-shi JP
  • Sakudo; Noriyuki - Hitachi JP
  • Sakudo; Noriyuki - Ome JP
  • Sakudo; Noriyuki - Ohme JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Charge neutralizing device
Grant 7,557,364 - Ito , et al. July 7, 2
2009-07-07
Charge Neutralizing Device
App 20070228294 - Ito; Hiroyuki ;   et al.
2007-10-04
Waveguide and microwave ion source equipped with the waveguide
Grant 7,166,965 - Ito , et al. January 23, 2
2007-01-23
Waveguide and microwave ion source equipped with the waveguide
App 20040090185 - Ito, Hiroyuki ;   et al.
2004-05-13
Method and apparatus for modifying surface of container made of polymeric compound
App 20020117114 - Ikenaga, Noriaki ;   et al.
2002-08-29
Ion implanting apparatus
Grant 5,349,196 - Amemiya , et al. September 20, 1
1994-09-20
Microwave-powered plasma-generating apparatus and method
Grant 5,266,146 - Ohno , et al. November 30, 1
1993-11-30
External resonance circuit type radio frequency quadrupole accelerator
Grant 5,086,256 - Tokiguchi , et al. February 4, 1
1992-02-04
Microwave ion source
Grant 5,053,678 - Koike , et al. October 1, 1
1991-10-01
Charged particle source
Grant 4,924,101 - Sakudo , et al. May 8, 1
1990-05-08
Charged particle accelerator using quadrupole electrodes
Grant 4,801,847 - Sakudo , et al. January 31, 1
1989-01-31
Ion source
Grant 4,658,143 - Tokiguchi , et al. April 14, 1
1987-04-14
Ion implanter
Grant 4,633,138 - Tokiguchi , et al. December 30, 1
1986-12-30
Method of forming electrical contact to a semiconductor substrate via a metallic silicide or silicon alloy layer formed in the substrate
Grant 4,577,396 - Yamamoto , et al. March 25, 1
1986-03-25
Microwave plasma source having improved switching operation from plasma ignition phase to normal ion extraction phase
Grant 4,543,465 - Sakudo , et al. September 24, 1
1985-09-24
Microwave plasma source
Grant 4,433,228 - Nishimatsu , et al. February 21, 1
1984-02-21
Microwave discharge ion source
Grant 4,409,520 - Koike , et al. October 11, 1
1983-10-11
Microwave plasma ion source
Grant 4,393,333 - Sakudo , et al. July 12, 1
1983-07-12
Microwave plasma ion source
Grant 4,316,090 - Sakudo , et al. February 16, 1
1982-02-16
Plasma etching apparatus
Grant 4,101,411 - Suzuki , et al. July 18, 1
1978-07-18

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