SAKOTSUBO; Yukihiro

Patent Applications and Registrations

Patent applications and USPTO patent grants for SAKOTSUBO; Yukihiro.The latest application filed is for "three-dimensional memory device with plural channels per memory opening and methods of making the same".

Company Profile

2.14.13

SAKOTSUBO; Yukihiro - Yokkaichi JP
Sakotsubo; Yukihiro - Tokyo N/A JP
Sakotsubo; Yukihiro - Kanagawa JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Three-dimensional Memory Device With Plural Channels Per Memory Opening And Methods Of Making The Same App 20220189981 - SAKOTSUBO; Yukihiro	2022-06-16
Three-dimensional memory device including bump-containing bit lines and methods for manufacturing the same Grant 11,355,437 - Cui , et al. June 7, 2	2022-06-07
Three-dimensional Memory Device Including Bump-containing Bit Lines And Methods For Manufacturing The Same App 20220045005 - CUI; Zhixin ; et al.	2022-02-10
Nand String Containing Separate Hole And Electron Tunneling Dielectric Layers And Methods For Forming The Same App 20210020651 - SAKOTSUBO; Yukihiro	2021-01-21
NAND string containing separate hole and electron tunneling dielectric layers and methods for forming the same Grant 10,892,279 - Sakotsubo January 12, 2	2021-01-12
Ferroelectric non-volatile memory Grant 10,734,408 - Dong , et al.	2020-08-04
Ferroelectric Non-volatile Memory App 20200020704 - Dong; Yingda ; et al.	2020-01-16
Ferroelectric non-volatile memory Grant 10,461,095 - Dong , et al. Oc	2019-10-29
Ferroelectric non-volatile memory Grant 10,453,862 - Dong , et al. Oc	2019-10-22
Ferroelectric non-volatile memory Grant 10,453,861 - Dong , et al. Oc	2019-10-22
Ferroelectric Non-volatile Memory App 20190304987 - Dong; Yingda ; et al.	2019-10-03
Ferroelectric Non-volatile Memory App 20190304988 - Dong; Yingda ; et al.	2019-10-03
Ferroelectric Non-volatile Memory App 20190304986 - Dong; Yingda ; et al.	2019-10-03
Non-volatile memory device containing oxygen-scavenging material portions and method of making thereof Grant 9,812,505 - Sakotsubo November 7, 2	2017-11-07
Non-volatile Memory Device Containing Oxygen-scavenging Material Portions And Method Of Making Thereof App 20170141161 - SAKOTSUBO; Yukihiro	2017-05-18
Fully isolated selector for memory device Grant 9,437,658 - Sakotsubo September 6, 2	2016-09-06
Fully Isolated Selector For Memory Device App 20160043143 - SAKOTSUBO; Yukihiro	2016-02-11
Semiconductor device with variable resistance element and method for manufacturing the same Grant 8,766,233 - Sakotsubo , et al. July 1, 2	2014-07-01
Nonvolatile semiconductor storage device and a manufacturing method thereof Grant 8,710,478 - Sakotsubo April 29, 2	2014-04-29
Nonvolatile semiconductor memory device and manufacturing method thereof Grant 8,598,564 - Sakotsubo December 3, 2	2013-12-03
Nonvolatile Semicocductor Memory Device And Manufacturing Method Thereof App 20130062588 - SAKOTSUBO; Yukihiro	2013-03-14
Nonvolatile Semiconductor Storage Device And A Manufacturing Method Thereof App 20120313068 - SAKOTSUBO; Yukihiro	2012-12-13
Semiconductor Device And Method For Manufacturing The Same App 20120267598 - Sakotsubo; Yukihiro ; et al.	2012-10-25

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