loadpatents
Patent applications and USPTO patent grants for Sakiyama; Keizo.The latest application filed is for "electroluminescent device".
Patent | Date |
---|---|
Electroluminescent device Grant 7,208,768 - Ono , et al. April 24, 2 | 2007-04-24 |
EPIR device and semiconductor devices utilizing the same Grant 7,027,322 - Suzuki , et al. April 11, 2 | 2006-04-11 |
Electroluminescent device App 20050253136 - Ono, Yoshi ;   et al. | 2005-11-17 |
EPIR device and semiconductor devices utilizing the same App 20050040482 - Suzuki, Toshimasa ;   et al. | 2005-02-24 |
Spin transistor magnetic random access memory device Grant 6,753,562 - Hsu , et al. June 22, 2 | 2004-06-22 |
Raised silicide source/drain MOS transistors having enlarged source/drain contact regions and method Grant 6,352,899 - Sakiyama , et al. March 5, 2 | 2002-03-05 |
Semiconductor memory device with amorphous diffusion barrier between capacitor and plug Grant 5,965,942 - Itoh , et al. October 12, 1 | 1999-10-12 |
Method for etching PT film Grant 5,515,984 - Yokoyama , et al. May 14, 1 | 1996-05-14 |
Method for forming a wiring layer Grant 5,420,077 - Saito , et al. * May 30, 1 | 1995-05-30 |
Non-volatile random access memory with ferroelectric capacitor Grant 5,416,735 - Onishi , et al. May 16, 1 | 1995-05-16 |
Non-volatile random access memory having a high load device Grant 5,414,653 - Onishi , et al. May 9, 1 | 1995-05-09 |
Semiconductor memory device having two transistors and at least one ferroelectric film capacitor Grant 5,357,460 - Yusuki , et al. October 18, 1 | 1994-10-18 |
Non-volatile semiconductor memory Grant 5,331,181 - Tanaka , et al. July 19, 1 | 1994-07-19 |
Anti-fuse memory device with switched capacitor setting method Grant 5,299,152 - Ishihara , et al. March 29, 1 | 1994-03-29 |
Method for writing into semiconductor memory Grant 5,299,151 - Ishihara , et al. March 29, 1 | 1994-03-29 |
Semiconductor device with PZT/PLZT film and lead-containing electrode Grant 5,293,075 - Onishi , et al. March 8, 1 | 1994-03-08 |
Semiconductor memory device and a method for producing the same Grant 5,290,725 - Tanaka , et al. March 1, 1 | 1994-03-01 |
Semiconductor memory device Grant 5,181,188 - Yamauchi , et al. January 19, 1 | 1993-01-19 |
Semiconductor memory device having a volatile memory device and a non-volatile memory device Grant 5,140,552 - Yamauchi , et al. August 18, 1 | 1992-08-18 |
Semiconductor device Grant 5,119,163 - Ishihara , et al. June 2, 1 | 1992-06-02 |
Process for producing semiconductor devices Grant 5,108,783 - Tanigawa , et al. April 28, 1 | 1992-04-28 |
Semiconductor memory device having a volatile memory device and a non-volatile memory device Grant 5,075,888 - Yamauchi , et al. December 24, 1 | 1991-12-24 |
High resistive element Grant 5,049,970 - Tanaka , et al. September 17, 1 | 1991-09-17 |
Semiconductor memory device Grant 5,043,946 - Yamauchi , et al. August 27, 1 | 1991-08-27 |
Monolithic semiconductor integrated circuit with programmable elements for minimizing deviation of threshold value Grant 4,695,745 - Mimoto , et al. September 22, 1 | 1987-09-22 |
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