SAKAGUCHI; Yasuyuki

Patent Applications and Registrations

Patent applications and USPTO patent grants for SAKAGUCHI; Yasuyuki.The latest application filed is for "method of inspecting lubricating oil composition and method of producing lubricating oil composition".

Company Profile

0.10.12

SAKAGUCHI; Yasuyuki - Tokyo JP
SAKAGUCHI; Yasuyuki - Chichibu-shi JP
Sakaguchi; Yasuyuki - Chichibu N/A JP
Sakaguchi; Yasuyuki - Chiba JP
Sakaguchi; Yasuyuki - Chiba-shi JP
Sakaguchi; Yasuyuki - Saitama JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method Of Inspecting Lubricating Oil Composition And Method Of Producing Lubricating Oil Composition App 20220074840 - MONDEN; Ryuji ; et al.	2022-03-10
Silicon Carbide Epitaxial Wafer And Manufacturing Method Therefor App 20140339571 - MOMOSE; Kenji ; et al.	2014-11-20
Silicon carbide epitaxial wafer and manufacturing method therefor Grant 8,823,015 - Momose , et al. September 2, 2	2014-09-02
Silicon Carbide Single Crystal Substrate App 20130224954 - SAKAGUCHI; Yasuyuki	2013-08-29
Semiconductor device and method of manufacturing the same Grant 8,513,674 - Sugai , et al. August 20, 2	2013-08-20
Silicon Carbide Epitaxial Wafer And Manufacturing Method Therefor App 20120146056 - Momose; Kenji ; et al.	2012-06-14
Semiconductor Device And Method Of Manufacturing The Same App 20110233563 - Sugai; Akihiko ; et al.	2011-09-29
Method for producing silicon carbide single crystal Grant 7,993,453 - Oyanagi , et al. August 9, 2	2011-08-09
Silicon Carbide Single Crystal Substrate App 20110183113 - Sakaguchi; Yasuyuki	2011-07-28
Water-based Polishing Slurry For Polishing Silicon Carbide Single Crystal Substrate, And Polishing Method For The Same App 20100092366 - Kogoi; Hisao ; et al.	2010-04-15
Process For Producing Silicon Carbide Single Crystal App 20100028240 - Shonai; Tomohiro ; et al.	2010-02-04
Method For Producing Silicon Carbide Single Crystal App 20090184327 - Oyanagi; Naoki ; et al.	2009-07-23
Silicon carbide single crystal and method and apparatus for producing the same Grant 7,371,281 - Sakaguchi , et al. May 13, 2	2008-05-13
Silicon carbide single crystal and method and apparatus for producing the same App 20060144324 - Sakaguchi; Yasuyuki ; et al.	2006-07-06
Ammonia for use in manufacture of GaN-type compound semiconductor and method for manufacturing GaN-type compound semiconductor Grant 7,029,940 - Hayashida , et al. April 18, 2	2006-04-18
Ammonia for use in manufacture of GaN-type compound semiconductor and method for manufacturing GaN-type compound semiconductor App 20040192048 - Hayashida, Hideki ; et al.	2004-09-30
Ammonia for use in manufacture of GaN-type compound semiconductor and method for manufacturing GaN-type compound semiconductor Grant 6,719,842 - Hayashida , et al. April 13, 2	2004-04-13
Ammonia For Use In Manufacture Of Gan-type Compound Semiconductor And Method For Manufacturing Gan-type Compound Semiconductor App 20030033973 - HAYASHIDA, HIDEKI ; et al.	2003-02-20
A1GaInP light emitting diode Grant 5,744,829 - Murasato , et al. April 28, 1	1998-04-28
Semiconductor light emitting diode Grant 5,656,829 - Sakaguchi , et al. August 12, 1	1997-08-12

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