| Patent | Date |
|---|
Light receiving member with non-single-crystal silicon layer containing Cr, Fe, Na, Ni and Mg
Grant 5,741,615 - Saitoh , et al. April 21, 1 | 1998-04-21 |
Microwave plasma chemical vapor deposition process using a microwave window and movable, dielectric sheet
Grant 5,637,358 - Otoshi , et al. June 10, 1 | 1997-06-10 |
Method of producing a semiconductor device
Grant 5,635,408 - Sano , et al. June 3, 1 | 1997-06-03 |
Deposited film forming apparatus
Grant 5,527,396 - Saitoh , et al. June 18, 1 | 1996-06-18 |
Device for forming deposited film
Grant 5,482,557 - Kanai , et al. January 9, 1 | 1996-01-09 |
Photovoltaic device and a forming method thereof
Grant 5,417,770 - Saitoh , et al. May 23, 1 | 1995-05-23 |
Method for forming functional deposited films by means of microwave plasma chemical vapor deposition method
Grant 5,061,511 - Saitoh , et al. October 29, 1 | 1991-10-29 |
Microwave plasma chemical vapor deposition apparatus for forming functional deposited film with means for stabilizing plasma discharge
Grant 5,016,565 - Saitoh , et al. May 21, 1 | 1991-05-21 |
Method for forming functional deposited films by means of microwave plasma chemical vapor deposition method
Grant 4,957,772 - Saitoh , et al. September 18, 1 | 1990-09-18 |
Microwave plasma CVD apparatus having substrate shielding member
Grant 4,953,498 - Hashizume , et al. September 4, 1 | 1990-09-04 |
Microwave plasma CVD apparatus having an improved microwave transmissive window
Grant 4,930,442 - Iida , et al. June 5, 1 | 1990-06-05 |
Process for the formation of a functional deposited film by way of microwave plasma CVD method
Grant 4,897,281 - Arai , et al. January 30, 1 | 1990-01-30 |
Process for forming a deposited film on each of a plurality of substrates by way of microwave plasma chemical vapor deposition method
Grant 4,897,284 - Arai , et al. January 30, 1 | 1990-01-30 |
Method for forming a metal film on a substrate
Grant 4,844,950 - Saitoh , et al. July 4, 1 | 1989-07-04 |
Apparatus for forming deposited film
Grant 4,834,023 - Saitoh , et al. May 30, 1 | 1989-05-30 |
Method for forming deposited film
Grant 4,822,636 - Saitoh , et al. April 18, 1 | 1989-04-18 |
Process for producing electroluminescent devices
Grant 4,804,558 - Saitoh , et al. February 14, 1 | 1989-02-14 |
Member with light receiving layer of A-SI(GE) and A-SI and having plurality of non-parallel interfaces
Grant 4,701,393 - Saitoh , et al. October 20, 1 | 1987-10-20 |
Member having light receiving layer with smoothly interconnecting nonparallel interfaces
Grant 4,696,882 - Saitoh , et al. September 29, 1 | 1987-09-29 |
Photoconductive member
Grant 4,666,807 - Saitoh , et al. May 19, 1 | 1987-05-19 |
Light receiving member having photosensitive layer with non-parallel interfaces
Grant 4,650,736 - Saitoh , et al. March 17, 1 | 1987-03-17 |
Photoconductive member having amorphous silicon matrix with oxygen and impurity containing regions
Grant 4,636,450 - Ogawa , et al. January 13, 1 | 1987-01-13 |
Photoconductive member with a-Si; a-(Si/Ge) and a-(Si/C) layers
Grant 4,598,032 - Saitoh , et al. July 1, 1 | 1986-07-01 |
Photoconductive member of layer of A-Ge, A-Si increasing (O) and layer of A-Si(C) or (N)
Grant 4,592,982 - Saitoh , et al. June 3, 1 | 1986-06-03 |
Photoconductive member with amorphous silicon germanium regions and containing oxygen
Grant 4,569,892 - Saitoh February 11, 1 | 1986-02-11 |
Photoconductive member comprising a hydrogenated or halogenated amorphous silicon and geranium layer
Grant 4,567,127 - Saitoh , et al. January 28, 1 | 1986-01-28 |
Photoconductive member comprising silicon and oxygen
Grant 4,547,448 - Shirai , et al. October 15, 1 | 1985-10-15 |
Method for forming a deposition film
Grant 4,546,008 - Saitoh , et al. October 8, 1 | 1985-10-08 |
Photoconductive member having multiple amorphous layers
Grant 4,536,459 - Misumi , et al. August 20, 1 | 1985-08-20 |
Amorphous silicon photoconductive member with interface and rectifying layers
Grant 4,522,905 - Ogawa , et al. June 11, 1 | 1985-06-11 |
Photoconductive member having an amorphous silicon layer
Grant 4,501,807 - Shirai , et al. February 26, 1 | 1985-02-26 |
Photoconductive member comprising multiple amorphous layers
Grant 4,490,454 - Misumi , et al. December 25, 1 | 1984-12-25 |
Photoconductive member with doped and oxygen containing amorphous silicon layers
Grant 4,486,521 - Misumi , et al. December 4, 1 | 1984-12-04 |
Photoconductive member with a -Si having two layer regions
Grant 4,465,750 - Ogawa , et al. August 14, 1 | 1984-08-14 |
Photoconductive member with .alpha.-Si and C, U or D and dopant
Grant 4,460,669 - Ogawa , et al. July 17, 1 | 1984-07-17 |
Photoconductive member with .alpha.-Si and C, N or O and dopant
Grant 4,460,670 - Ogawa , et al. July 17, 1 | 1984-07-17 |
Photoconductive member with multiple amorphous Si layers
Grant 4,452,874 - Ogawa , et al. June 5, 1 | 1984-06-05 |
Amorphous photoconductive member with .alpha.-Si interlayers
Grant 4,452,875 - Ogawa , et al. June 5, 1 | 1984-06-05 |
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