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Patent applications and USPTO patent grants for Sai-Halasz; George A..The latest application filed is for "method for fabricating shallow junctions by preamorphizing with dopant of same conductivity as substrate".
Patent | Date |
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Method for fabricating shallow junctions by preamorphizing with dopant of same conductivity as substrate Grant 4,889,819 - Davari , et al. December 26, 1 | 1989-12-26 |
Electron beam lithography alignment using electric field changes to achieve registration Grant 4,871,919 - Donohue , et al. October 3, 1 | 1989-10-03 |
Room temperature cryogenic test interface Grant 4,498,046 - Faris , et al. February 5, 1 | 1985-02-05 |
Microwave-infrared detector with semiconductor superlattice region Grant 4,348,686 - Esaki , et al. September 7, 1 | 1982-09-07 |
Heterojunction superlattice with potential well depth greater than half the bandgap Grant 4,250,515 - Esaki , et al. February 10, 1 | 1981-02-10 |
Controlled absorption in heterojunction structures Grant 4,208,667 - Chang , et al. June 17, 1 | 1980-06-17 |
Infrared optical devices of layered structure Grant 4,205,331 - Esaki , et al. May 27, 1 | 1980-05-27 |
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