Sagoi; Masayuki

Patent Applications and Registrations

Patent applications and USPTO patent grants for Sagoi; Masayuki.The latest application filed is for "magnetoresistive element and magnetic memory device".

Company Profile

0.20.17

Sagoi; Masayuki - Yokohama JP
Sagoi; Masayuki - Yokohama-shi JP
Sagoi; Masayuki - Kanagawa-ken JP
Sagoi; Masayuki - Tokyo JP
Sagoi; Masayuki - Kanagawa JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Magnetoresistive element and magnetic memory device Grant 7,593,193 - Inomata , et al. September 22, 2	2009-09-22
Magnetoresistive element and magnetic memory device Grant 7,345,852 - Inomata , et al. March 18, 2	2008-03-18
Magnetoresistive Element And Magnetic Memory Device App 20070297101 - Inomata; Koichiro ; et al.	2007-12-27
Method of manufacturing a magnetoresistance effect device Grant 7,140,096 - Kishi , et al. November 28, 2	2006-11-28
Magnetoresistive element and magnetic memory device App 20060146451 - Inomata; Koichiro ; et al.	2006-07-06
Magnetoresistive element and magnetic memory device Grant 7,038,894 - Inomata , et al. May 2, 2	2006-05-02
Semiconductor memory device having memory cells including ferromagnetic films and control method thereof Grant 7,035,137 - Iwata , et al. April 25, 2	2006-04-25
Ferromagnetic double tunnel junction element with asymmetric energy band Grant 6,995,962 - Saito , et al. February 7, 2	2006-02-07
Magnetoresistive element and magnetic memory device Grant 6,987,653 - Inomata , et al. January 17, 2	2006-01-17
Magnetoresistive element and magnetic memory device App 20050185347 - Inomata, Koichiro ; et al.	2005-08-25
Magnetoresistance effect device, method of manufacturing the same, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information reproducing apparatus App 20050078417 - Kishi, Tatsuya ; et al.	2005-04-14
Ferromagnetic double tunnel junction element with asymmetric energy band App 20050078418 - Saito, Yoshiaki ; et al.	2005-04-14
Magnetic memory with reduced write current Grant 6,868,002 - Saito , et al. March 15, 2	2005-03-15
Semiconductor memory device having memory cells including ferromagnetic films and control method thereof App 20050036362 - Iwata, Yoshihisa ; et al.	2005-02-17
Ferromagnetic double tunnel junction element with asymmetric energy band Grant 6,839,206 - Saito , et al. January 4, 2	2005-01-04
Magnetoresistive element and magnetic memory device App 20040175596 - Inomata, Koichiro ; et al.	2004-09-09
Magnetic memory App 20040156231 - Saito, Yoshiaki ; et al.	2004-08-12
Magnetic memory having antiferromagnetically coupled recording layer Grant 6,751,074 - Inomata , et al. June 15, 2	2004-06-15
Magnetic memory device with divided write wirings App 20040109349 - Nakajima, Kentaro ; et al.	2004-06-10
Magnetoresistance effect device Grant 6,730,949 - Kishi , et al. May 4, 2	2004-05-04
Magnetic memory with reduced write current Grant 6,707,711 - Saito , et al. March 16, 2	2004-03-16
Magnetoresistive element and magnetic memory device App 20030197984 - Inomata, Koichiro ; et al.	2003-10-23
Magnetoresistive element and magnetic memory device Grant 6,611,405 - Inomata , et al. August 26, 2	2003-08-26
Magnetoresistance effect device, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information Grant 6,605,836 - Kishi , et al. August 12, 2	2003-08-12
Magnetic memory App 20030137870 - Saito, Yoshiaki ; et al.	2003-07-24
Magnetic memory device Grant 6,590,803 - Saito , et al. July 8, 2	2003-07-08
Magnetic memory with reduced write current Grant 6,556,473 - Saito , et al. April 29, 2	2003-04-29
Magnetoresistance effect device App 20020191451 - Kishi, Tatsuya ; et al.	2002-12-19
Magnetoresistance effect element App 20020159203 - Saito, Yoshiaki ; et al.	2002-10-31
Magnetic memory device Grant 6,473,336 - Nakajima , et al. October 29, 2	2002-10-29
Magnetic memory device App 20020141232 - Saito, Yoshiaki ; et al.	2002-10-03
Magnetoresistance effect device, method of manufacturing the same, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information reproducing apparatus App 20020130339 - Kishi, Tatsuya ; et al.	2002-09-19
Magnetic memory App 20020034094 - Saito, Yoshiaki ; et al.	2002-03-21
Magnetic memory device App 20020006058 - Nakajima, Kentaro ; et al.	2002-01-17
Perpendicular magnetic recording floppy disk Grant 4,801,481 - Sagoi , et al. January 31, 1	1989-01-31
Magnetic recording medium Grant 4,761,334 - Sagoi , et al. August 2, 1	1988-08-02
Magnetic recording medium Grant 4,701,374 - Sagoi , et al. October 20, 1	1987-10-20

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