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Patent applications and USPTO patent grants for Rumennik; Vladimir.The latest application filed is for "high-voltage transistor with multi-layer conduction region".
Patent | Date |
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High-voltage transistor with multi-layer conduction region Grant 6,828,631 - Rumennik , et al. December 7, 2 | 2004-12-07 |
High-voltage transistor with multi-layer conduction region App 20040217419 - Rumennik, Vladimir ;   et al. | 2004-11-04 |
High-voltage Transistor With Multi-layer Conduction Region App 20040207012 - Rumennik, Vladimir ;   et al. | 2004-10-21 |
High-voltage transistor with multi-layer conduction region Grant 6,800,903 - Rumennik , et al. October 5, 2 | 2004-10-05 |
Method of making a high-voltage transistor with buried conduction regions Grant 6,787,437 - Rumennik , et al. September 7, 2 | 2004-09-07 |
High-voltage transistor with multi-layer conduction region Grant 6,777,749 - Rumennik , et al. August 17, 2 | 2004-08-17 |
High-voltage transistor with multi-layer conduction region Grant 6,768,172 - Rumennik , et al. July 27, 2 | 2004-07-27 |
Method of making a high-voltage transistor with buried conduction regions Grant 6,724,041 - Rumennik , et al. April 20, 2 | 2004-04-20 |
High-voltage transistor with multi-layer conduction region Grant 6,633,065 - Rumennik , et al. October 14, 2 | 2003-10-14 |
High-voltage transistor with multi-layer conduction region App 20030151093 - Rumennik, Vladimir ;   et al. | 2003-08-14 |
High-voltage transistor with multi-layer conduction region App 20030151101 - Rumennik, Vladimir ;   et al. | 2003-08-14 |
High current field-effect transistor Grant 6,600,182 - Rumennik July 29, 2 | 2003-07-29 |
High-voltage transistor with multi-layer conduction region Grant 6,570,219 - Rumennik , et al. May 27, 2 | 2003-05-27 |
High current field-effect transistor App 20030057459 - Rumennik, Vladimir | 2003-03-27 |
Method of making a high-voltage transistor with buried conduction regions App 20030042541 - Rumennik, Vladimir ;   et al. | 2003-03-06 |
High-voltage transistor with multi-layer conduction region App 20030025155 - Rumennik, Vladimir ;   et al. | 2003-02-06 |
Method Of Making A High-voltage Transistor With Buried Conduction Regions App 20020153556 - Rumennik, Vladimir ;   et al. | 2002-10-24 |
High-voltage transistor with multi-layer conduction region App 20020053698 - Rumennik, Vladimir ;   et al. | 2002-05-09 |
High-voltage transistor with multi-layer conduction region App 20020050613 - Rumennik, Vladimir ;   et al. | 2002-05-02 |
High-voltage transistor with multi-layer conduction region Grant 6,207,994 - Rumennik , et al. March 27, 2 | 2001-03-27 |
Method of making a high-voltage transistor with multiple lateral conduction layers Grant 6,168,983 - Rumennik , et al. January 2, 2 | 2001-01-02 |
Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current Grant 5,430,315 - Rumennik July 4, 1 | 1995-07-04 |
Method of making high voltage transistor Grant 5,411,901 - Grabowski , et al. May 2, 1 | 1995-05-02 |
Bi-directional MOSFET switch Grant 5,323,044 - Rumennik , et al. June 21, 1 | 1994-06-21 |
High voltage transistor Grant 5,274,259 - Grabowski , et al. December 28, 1 | 1993-12-28 |
Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes Grant 5,258,636 - Rumennik , et al. November 2, 1 | 1993-11-02 |
MOS gated bipolar transistor Grant 5,072,268 - Rumennik December 10, 1 | 1991-12-10 |
Plural polygon source pattern for MOSFET Grant 5,008,725 - Lidow , et al. April 16, 1 | 1991-04-16 |
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