Rui; Qiang

Patent Applications and Registrations

Patent applications and USPTO patent grants for Rui; Qiang.The latest application filed is for "igbt manufacturing method".

Company Profile

1.7.7

Rui; Qiang - Jiangsu CN
Rui; Qiang - Wuxi New District CN

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor Grant 10,096,699 - Zhang , et al. October 9, 2	2018-10-09
Manufacturing method for reverse conducting insulated gate bipolar transistor Grant 9,673,193 - Zhang , et al. June 6, 2	2017-06-06
Reverse conduction insulated gate bipolar transistor (IGBT) manufacturing method Grant 9,666,682 - Wang , et al. May 30, 2	2017-05-30
IGBT manufacturing method Grant 9,620,615 - Deng , et al. April 11, 2	2017-04-11
Method for removing polysilicon protection layer on a back face of an IGBT having a field stop structure Grant 9,607,851 - Rui , et al. March 28, 2	2017-03-28
IGBT with built-in diode and manufacturing method therefor Grant 9,595,520 - Deng , et al. March 14, 2	2017-03-14
Manufacturing Method For Reverse Conducting Insulated Gate Bipolar Transistor App 20160379974 - ZHANG; Shuo ; et al.	2016-12-29
Igbt Manufacturing Method App 20160380071 - DENG; Xiaoshe ; et al.	2016-12-29
Reverse Conduction Insulated Gate Bipolar Transistor (igbt) Manufacturing Method App 20160372571 - Wang; Wanli ; et al.	2016-12-22
Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor Grant 9,443,926 - Zhang , et al. September 13, 2	2016-09-13
Field-stop Reverse Conducting Insulated Gate Bipolar Transistor And Manufacturing Method Therefor App 20160240608 - ZHANG; Shuo ; et al.	2016-08-18
Igbt With Built-in Diode And Manufacturing Method Therefor App 20160240528 - DENG; Xiaoshe ; et al.	2016-08-18
Field-stop Reverse Conducting Insulated Gate Bipolar Transistor And Manufacturing Method Therefor App 20160163841 - ZHANG; Shuo ; et al.	2016-06-09
Method For Removing A Polysilicon Protection Layer On A Back Face Of An Igbt Having A Field Stop Structure App 20150155182 - Rui; Qiang ; et al.	2015-06-04

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.