Rottner; Kurt

Patent Applications and Registrations

Patent applications and USPTO patent grants for Rottner; Kurt.The latest application filed is for "method for producing a region doped with boron in a sic-layer".

Company Profile

0.9.0

Rottner; Kurt - Kista SE
Rottner; Kurt - Erlangen DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for producing a region doped with boron in a SiC-layer Grant 6,703,294 - Schoner , et al. March 9, 2	2004-03-09
Schottky diode of SiC and a method for production thereof Grant 6,104,043 - Hermansson , et al. August 15, 2	2000-08-15
Fabrication of a SiC semiconductor device comprising a pn junction with a voltage absorbing edge Grant 6,040,237 - Bakowski , et al. March 21, 2	2000-03-21
SiC semiconductor device comprising a pn junction with a voltage absorbing edge Grant 6,002,159 - Bakowski , et al. December 14, 1	1999-12-14
Method for producing a semiconductor device comprising an implantation step Grant 5,849,620 - Harris , et al. December 15, 1	1998-12-15
Method for producing a semiconductor device having a semiconductor layer of SiC by implanting Grant 5,710,059 - Rottner January 20, 1	1998-01-20
Method for producing a semiconductor device having semiconductor layers of SiC by the use of an ion-implantation technique Grant 5,705,406 - Rottner , et al. January 6, 1	1998-01-06
Method for producing a semiconductor device by the use of an implanting step Grant 5,674,765 - Rottner , et al. October 7, 1	1997-10-07
Circuit coupling an oscillator to an electrical load Grant 5,053,727 - Jann , et al. October 1, 1	1991-10-01

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