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Patent applications and USPTO patent grants for Ros Bengoechea; Onintza.The latest application filed is for "process for forming a layer of equiaxed titanium nitride and a mosfet device having a metal gate electrode including a layer of equiaxed titanium nitride".
Patent | Date |
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Silicon addition for silicon nitride etching selectivity Grant 10,283,370 - Ros Bengoechea , et al. | 2019-05-07 |
Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride Grant 10,211,059 - Caubet , et al. Feb | 2019-02-19 |
Process For Forming A Layer Of Equiaxed Titanium Nitride And A Mosfet Device Having A Metal Gate Electrode Including A Layer Of Equiaxed Titanium Nitride App 20170256625 - Caubet; Pierre ;   et al. | 2017-09-07 |
Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride Grant 9,691,871 - Caubet , et al. June 27, 2 | 2017-06-27 |
Process For Forming A Layer Of Equiaxed Titanium Nitride And A Mosfet Device Having A Metal Gate Electrode Including A Layer Of Equiaxed Titanium Nitride App 20170179250 - Caubet; Pierre ;   et al. | 2017-06-22 |
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