| Patent | Date |
|---|
Passivation layer for germanium substrate
Grant 11,270,887 - Romero , et al. March 8, 2 | 2022-03-08 |
Selective Gate Spacers For Semiconductor Devices
App 20210143265 - Clendenning; Scott B. ; et al. | 2021-05-13 |
Selective gate spacers for semiconductor devices
Grant 10,971,600 - Clendenning , et al. April 6, 2 | 2021-04-06 |
Selective deposition utilizing sacrificial blocking layers for semiconductor devices
Grant 10,756,215 - Kloster , et al. A | 2020-08-25 |
Passivation Layer For Germanium Substrate
App 20200168462 - ROMERO; Patricio E. ; et al. | 2020-05-28 |
Selective Gate Spacers For Semiconductor Devices
App 20200020786 - Clendenning; Scott B. ; et al. | 2020-01-16 |
Inherently selective precursors for deposition of second or third row transition metal thin films
Grant 10,464,959 - Romero No | 2019-11-05 |
Selective gate spacers for semiconductor devices
Grant 10,396,176 - Clendenning , et al. A | 2019-08-27 |
Scandium Precursor For Sc2o3 Or Sc2s3 Atomic Layer Deposition
App 20190202842 - ROMERO; PATRICIO E. | 2019-07-04 |
Selective Deposition Utilizing Sacrificial Blocking Layers For Semiconductor Devices
App 20190189803 - KLOSTER; Grant ; et al. | 2019-06-20 |
Selective deposition utilizing sacrificial blocking layers for semiconductor devices
Grant 10,243,080 - Kloster , et al. | 2019-03-26 |
Transition metal dry etch by atomic layer removal of oxide layers for device fabrication
Grant 10,217,646 - Romero , et al. Feb | 2019-02-26 |
Inherently Selective Precursors For Deposition Of Second Or Third Row Transition Metal Thin Films
App 20180222933 - ROMERO; Patricio E. | 2018-08-09 |
Selective Gate Spacers For Semiconductor Devices
App 20180219080 - CLENDENNING; Scott B. ; et al. | 2018-08-02 |
Transition Metal Dry Etch By Atomic Layer Removal Of Oxide Layers For Device Fabrication
App 20180138054 - ROMERO; Patricio E. ; et al. | 2018-05-17 |
Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD)
Grant 9,932,671 - Blackwell , et al. April 3, 2 | 2018-04-03 |
Selective Deposition Utilizing Sacrificial Blocking Layers For Semiconductor Devices
App 20170330972 - KLOSTER; GRANT ; et al. | 2017-11-16 |
Process and material for preventing deleterious expansion of high aspect ratio copper filled through silicon vias (TSVs)
Grant 9,786,559 - Zimmerman , et al. October 10, 2 | 2017-10-10 |
Selective Diffusion Barrier Between Metals Of An Integrated Circuit Device
App 20170148739 - ROBERTS; Jeanette M. ; et al. | 2017-05-25 |
Precursor and Process Design for Photo-Assisted Metal Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD)
App 20170058401 - BLACKWELL; James M. ; et al. | 2017-03-02 |
Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)
Grant 9,583,389 - Romero , et al. February 28, 2 | 2017-02-28 |
Forming layers of materials over small regions by selective chemical reaction including limiting enchroachment of the layers over adjacent regions
Grant 9,530,733 - Bristol , et al. December 27, 2 | 2016-12-27 |
Conformal thin film deposition of electropositive metal alloy films
Grant 9,455,150 - Clendenning , et al. September 27, 2 | 2016-09-27 |
Electropositive metal containing layers for semiconductor applications
Grant 9,390,932 - Romero , et al. July 12, 2 | 2016-07-12 |
Method of forming a metal from a cobalt metal precursor
Grant 9,385,033 - Blackwell , et al. July 5, 2 | 2016-07-05 |
Forming Layers Of Materials Over Small Regions By Selectiv Chemical Reaction Including Limiting Enchroachment Of The Layers Over Adjacent Regions
App 20160190060 - Bristol; Robert L. ; et al. | 2016-06-30 |
Process And Material For Preventing Deleterious Expansion Of High Aspect Ratio Copper Filled Through Silicon Vias (tsvs)
App 20160163596 - Zimmerman; Paul A. ; et al. | 2016-06-09 |
Selective Area Deposition Of Metal Films By Atomic Layer Deposition (ald) And Chemical Vapor Deposition (cvd)
App 20160086850 - Romero; Patricio E. ; et al. | 2016-03-24 |
Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)
Grant 9,236,292 - Romero , et al. January 12, 2 | 2016-01-12 |
Electropositive Metal Containing Layers For Semiconductor Applications
App 20150243508 - Romero; Patricio E. ; et al. | 2015-08-27 |
Additives to improve the performance of a precursor source for cobalt deposition
Grant 9,090,964 - Blackwell , et al. July 28, 2 | 2015-07-28 |
Scalable and high yield synthesis of transition metal bis-diazabutadienes
Grant 9,067,958 - Romero June 30, 2 | 2015-06-30 |
Additives To Improve The Performance Of A Precursor Source For Cobalt Deposition
App 20150176119 - Blackwell; James M. ; et al. | 2015-06-25 |
Selective Area Deposition Of Metal Films By Atomic Layer Deposition (ald) And Chemical Vapor Deposition (cvd)
App 20150170961 - Romero; Patricio E. ; et al. | 2015-06-18 |
Scalable And High Yield Synthesis Of Transition Metal Bis-Diazabutadienes
App 20150105573 - Romero; Patricio E. | 2015-04-16 |
Cobalt Metal Precursors
App 20150093890 - Blackwell; James M. ; et al. | 2015-04-02 |
Electropositive metal containing layers for semiconductor applications
Grant 8,952,355 - Romero , et al. February 10, 2 | 2015-02-10 |
Process And Material For Preventing Deleterious Expansion Of High Aspect Ratio Copper Filled Through Silicon Vias (tsvs)
App 20140117559 - Zimmerman; Paul A. ; et al. | 2014-05-01 |
Electropositive Metal Containing Layers For Semiconductor Applications
App 20130270513 - Romero; Patricio E. ; et al. | 2013-10-17 |
Combined Formose/Transfer Hydrogenation Process for Ethylene Glycol Synthesis
App 20100305368 - Grubbs; Robert H. ; et al. | 2010-12-02 |
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