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Patent applications and USPTO patent grants for Rolph; Randy K..The latest application filed is for "mocvd reactor system for indium antimonide epitaxial material".
Patent | Date |
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MOCVD reactor system for indium antimonide epitaxial material Grant 5,702,532 - Wen , et al. December 30, 1 | 1997-12-30 |
Bubbler for solid metal organic source material and method of producing saturated carrying gas Grant 5,553,395 - Wen , et al. September 10, 1 | 1996-09-10 |
Field emitter structure and fabrication process providing passageways for venting of outgassed materials from active electronic area Grant 5,083,958 - Longo , et al. January 28, 1 | 1992-01-28 |
Field emitter structure providing passageways for venting of outgassed materials from active electronic area Grant 5,063,323 - Longo , et al. November 5, 1 | 1991-11-05 |
Self-aligned gate process for fabricating field emitter arrays Grant 4,943,343 - Bardai , et al. July 24, 1 | 1990-07-24 |
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