Roh; Kwan-jong

Patent Applications and Registrations

Patent applications and USPTO patent grants for Roh; Kwan-jong.The latest application filed is for "method of manufacturing a semiconductor device".

Company Profile

0.10.14

Roh; Kwan-jong - Anyang KR
Roh; Kwan-Jong - Gunpo-si KR
Roh; Kwan-Jong - Gyeonggi-do KR
Roh; Kwan-Jong - Anyang-si KR
Roh, Kwan-Jong - Anyang-city KR
Roh, Kwan-Jong - US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for fabricating semiconductor device using a nickel salicide process Grant 8,008,177 - San , et al. August 30, 2	2011-08-30
Method of manufacturing a semiconductor device Grant 7,932,149 - Park , et al. April 26, 2	2011-04-26
Nickel alloy salicide transistor structure and method for manufacturing same Grant 7,781,322 - Ku , et al. August 24, 2	2010-08-24
Semiconductor integrated circuit device and method of manufacturing the same Grant 7,709,340 - Ahn , et al. May 4, 2	2010-05-04
Method of manufacturing a semiconductor device App 20090286369 - Park; Jee-Hyun ; et al.	2009-11-19
Methods of forming metal silicide layers by annealing metal layers using inert heat transferring gases established in a convection apparatus Grant 7,569,483 - Jung , et al. August 4, 2	2009-08-04
Trench isolation type semiconductor device and related method of manufacture Grant 7,557,415 - Youn , et al. July 7, 2	2009-07-07
Method for forming a metal silicide layer in a semiconductor device Grant 7,375,025 - Lee , et al. May 20, 2	2008-05-20
Semiconductor integrated circuit device and method of manufacturing the same App 20070187770 - Ahn; Jong-hyon ; et al.	2007-08-16
Trench isolation type semiconductor device and related method of manufacture App 20070164391 - Youn; Ki-seog ; et al.	2007-07-19
Nickel salicide process with reduced dopant deactivation Grant 7,232,756 - Ku , et al. June 19, 2	2007-06-19
Semiconductor device having self-aligned silicide layer and method thereof App 20060223296 - Sun; Min-Chul ; et al.	2006-10-05
Methods of fabricating a semiconductor device having MOS transistor with strained channel Grant 7,084,061 - Sun , et al. August 1, 2	2006-08-01
Method for forming a metal silicide layer in a semiconductor device App 20060068585 - Lee; Eung-Joon ; et al.	2006-03-30
Salicide process and method of fabricating semiconductor device using the same App 20060063380 - Jung; Sug-Woo ; et al.	2006-03-23
Method for forming a metal silicide layer in a semiconductor device Grant 7,005,373 - Lee , et al. February 28, 2	2006-02-28
Salicide process using bi-metal layer and method of fabricating semiconductor device using the same App 20060003534 - Roh; Kwan-Jong ; et al.	2006-01-05
Nickel alloy salicide transistor structure and method for manufacturing same App 20050236715 - Ku, Ja-Hum ; et al.	2005-10-27
Nickel salicide processes and methods of fabricating semiconductor devices using the same App 20050158996 - Kim, Min-Joo ; et al.	2005-07-21
Nickel alloy salicide transistor structure and method for manufacturing same App 20040266182 - Ku, Ja-Hum ; et al.	2004-12-30
Methods of fabricating a semiconductor device having MOS transistor with strained channel App 20040253791 - Sun, Min-Chul ; et al.	2004-12-16
Nickel salicide process with reduced dopant deactivation App 20040209432 - Ku, Ja-Hum ; et al.	2004-10-21
Method for forming a metal silicide layer in a semiconductor device App 20040175890 - Lee, Eung-Joon ; et al.	2004-09-09
Method for fabricating semiconductor device using a nickel salicide process App 20040097060 - San, Min-Chul ; et al.	2004-05-20

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