Rodriguez; Philippe

Patent Applications and Registrations

Patent applications and USPTO patent grants for Rodriguez; Philippe.The latest application filed is for "method for forming ohmic contacts, particularly of ni(gesn) type implementing laser annealing".

Company Profile

6.6.9

Rodriguez; Philippe - Grenoble FR
RODRIGUEZ; Philippe - Grenoble Cedex 09 FR
Rodriguez; Philippe - Le Grand Lemps FR
Rodriguez; Philippe - Rives FR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Contacting area on germanium Grant 11,450,776 - Ludurczak , et al. September 20, 2	2022-09-20
METHOD FOR FORMING OHMIC CONTACTS, PARTICULARLY OF Ni(GeSn) TYPE IMPLEMENTING LASER ANNEALING App 20220037477 - QUINTERO COLMENA; Andrea-Carolina ; et al.	2022-02-03
Process for producing a component comprising III-V materials and contacts compatible with silicon process flows Grant 11,075,501 - Ghegin , et al. July 27, 2	2021-07-27
Contacting Area On Germanium App 20210066535 - Ludurczak; Willy ; et al.	2021-03-04
Contacting Area On Germanium App 20200313008 - Ludurczak; Willy ; et al.	2020-10-01
Process For Producing A Component Comprising Iii-v Materials And Contacts Compatible With Silicon Process Flows App 20200274321 - GHEGIN; Elodie ; et al.	2020-08-27
Formation of Ohmic contacts for a device provided with a region made of III-V material and a region made of another semiconductor material Grant 10,388,653 - Rodriguez , et al. A	2019-08-20
Process for producing an intermetallic contact based on Ni on In.sub.xGa.sub.1-xAs Grant 10,361,087 - Rodriguez , et al.	2019-07-23
Procede De Fabrication D'une Heterostructure Comportant Des Structures Elementaires Actives Ou Passives En Materiau Iii-v A La S App 20190187375 - NEMOUCHI; Fabrice ; et al.	2019-06-20
Procede De Realisation De Contact Intermetallique A Base De Ni Sur Inxga1-xas App 20190006182 - RODRIGUEZ; Philippe ; et al.	2019-01-03
Jet spouted bed type reactor device having a specific profile for CVD Grant 10,068,674 - Brothier , et al. September 4, 2	2018-09-04
Formation Of Ohmic Contacts For A Device Provided With A Region Made Of Iii-v Material And A Region Made Of Another Semiconductor Material App 20170062424 - RODRIGUEZ; Philippe ; et al.	2017-03-02
Jet Spouted Bed Type Reactor Device Having A Specific Profile For CVD App 20140193570 - Brothier; Meryl ; et al.	2014-07-10

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