loadpatents
name:-0.0074210166931152
name:-0.0066368579864502
name:-0.0021378993988037
ROBY; Mary Alyssa Drummond Patent Filings

ROBY; Mary Alyssa Drummond

Patent Applications and Registrations

Patent applications and USPTO patent grants for ROBY; Mary Alyssa Drummond.The latest application filed is for "barrier structure within a microelectronic enclosure".

Company Profile
1.5.7
  • ROBY; Mary Alyssa Drummond - Plano TX
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Barrier Structure Within A Microelectronic Enclosure
App 20220212919 - HOLM; Jennifer Lynne ;   et al.
2022-07-07
Method of forming a semiconductor device
Grant 10,319,899 - Jiang , et al.
2019-06-11
High-temperature isotropic plasma etching process to prevent electrical shorts
Grant 9,939,710 - Jiang , et al. April 10, 2
2018-04-10
Piezoeletric Wet Etch Process With Reduced Resist Lifting And Controlled Undercut
App 20170338401 - Jiang; Neng ;   et al.
2017-11-23
Piezoeletric wet etch process with reduced resist lifting and controlled undercut
Grant 9,755,139 - Jiang , et al. September 5, 2
2017-09-05
High-temperature Isotropic Plasma Etching Process To Prevent Electrical Shorts
App 20160313627 - Jiang; Neng ;   et al.
2016-10-27
High-temperature isotropic plasma etching process to prevent electrical shorts
Grant 9,405,089 - Jiang , et al. August 2, 2
2016-08-02
Bond-pad integration scheme for improved moisture barrier and electrical contact
Grant 9,304,283 - Soman , et al. April 5, 2
2016-04-05
METHODS TO IMPROVE THE CRYSTALLINITY OF PbZrTiO3 AND Pt FILMS FOR MEMS APPLICATIONS
App 20150380635 - Srinivasan; Bhaskar ;   et al.
2015-12-31
Piezoeletric Wet Etch Process With Reduced Resist Lifting And Controlled Undercut
App 20150380637 - Jiang; Neng ;   et al.
2015-12-31
Bond-pad Integration Scheme For Improved Moisture Barrier And Electrical Contact
App 20150338604 - Soman; Joel ;   et al.
2015-11-26
High-temperature Isotropic Plasma Etching Process To Prevent Electrical Shorts
App 20150340245 - Jiang; Neng ;   et al.
2015-11-26

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