Robins; Scott
Patent Applications and Registrations
Patent applications and USPTO patent grants for Robins; Scott.The latest application filed is for "thyristor device with carbon lifetime adjustment implant and its method of fabrication".
Company Profile
0.56.3
- Robins; Scott - San Jose CA
Patent Activity
| Patent | Date |
|---|---|
| Thyristor semiconductor memory and method of manufacture Grant 8,093,107 - Nemati , et al. January 10, 2 | 2012-01-10 |
| Gettering contaminants for integrated circuits formed on a silicon-on-insulator structure Grant 8,017,998 - Banna , et al. September 13, 2 | 2011-09-13 |
| Fin thyristor-based semiconductor device Grant 7,968,381 - Horch , et al. June 28, 2 | 2011-06-28 |
| Thyristor based memory cell Grant 7,894,256 - Nemati , et al. February 22, 2 | 2011-02-22 |
| Thyristor based memory cell Grant 7,894,255 - Nemati , et al. February 22, 2 | 2011-02-22 |
| Thyristor device with carbon lifetime adjustment implant and its method of fabrication Grant 7,858,449 - Yang , et al. December 28, 2 | 2010-12-28 |
| High ion/Ioff SOI MOSFET using body voltage control Grant 7,859,011 - Lee , et al. December 28, 2 | 2010-12-28 |
| Reducing effects of parasitic transistors in thyristor-based memory using an isolation or damage region Grant 7,554,130 - Robins , et al. June 30, 2 | 2009-06-30 |
| Thyristor Device With Carbon Lifetime Adjustment Implant And Its Method Of Fabrication App 20090162979 - Yang; Kevin J. ; et al. | 2009-06-25 |
| High Ion/ioff Soi Mosfet Using Body Voltage Control App 20090140288 - Lee; Zachary K. ; et al. | 2009-06-04 |
| Semiconductor device with leakage implant and method of fabrication Grant 7,491,586 - Horch , et al. February 17, 2 | 2009-02-17 |
| High Ion/Ioff SOI MOSFET using body voltage control Grant 7,489,008 - Lee , et al. February 10, 2 | 2009-02-10 |
| Thyristor device with carbon lifetime adjustment implant and its method of fabrication Grant 7,488,626 - Yang , et al. February 10, 2 | 2009-02-10 |
| Thyristor-based device with trench dielectric material Grant 7,374,974 - Horch , et al. May 20, 2 | 2008-05-20 |
| Thyristor-based device having dual control ports Grant 7,320,895 - Horch , et al. January 22, 2 | 2008-01-22 |
| Data restore in thryistor based memory devices Grant 7,245,525 - Lee , et al. July 17, 2 | 2007-07-17 |
| Trench isolation for thyristor-based device Grant 7,183,591 - Horch , et al. February 27, 2 | 2007-02-27 |
| Thyristor-based semiconductor memory device and its method of manufacture Grant 7,157,342 - Tarabbia , et al. January 2, 2 | 2007-01-02 |
| Fin thyristor-based semiconductor device Grant 7,135,745 - Horch , et al. November 14, 2 | 2006-11-14 |
| Self-aligned thin capacitively-coupled thyristor structure Grant 7,125,753 - Horch , et al. October 24, 2 | 2006-10-24 |
| High Ion/Ioff SOI MOSFET using body voltage control Grant 7,109,532 - Lee , et al. September 19, 2 | 2006-09-19 |
| Thyristor device with carbon lifetime adjustment implant and its method of fabrication Grant 7,075,122 - Yang , et al. July 11, 2 | 2006-07-11 |
| Reference cells for TCCT based memory cells Grant 7,064,977 - Horch , et al. June 20, 2 | 2006-06-20 |
| Thyristor having a first emitter with relatively lightly doped portion to the base Grant 7,053,423 - Nemati , et al. May 30, 2 | 2006-05-30 |
| Method and system for writing data to memory cells Grant 7,054,191 - Gupta , et al. May 30, 2 | 2006-05-30 |
| Shunt connection to the emitter of a thyristor Grant 7,049,182 - Horch , et al. May 23, 2 | 2006-05-23 |
| Gated-thyristor approach having angle-implanted base region Grant 7,037,763 - Nemati , et al. May 2, 2 | 2006-05-02 |
| Buried emitter contact for thyristor-based semiconductor device Grant 7,030,425 - Horch , et al. April 18, 2 | 2006-04-18 |
| Varied trench depth for thyristor isolation Grant 7,015,077 - Horch , et al. March 21, 2 | 2006-03-21 |
| Trench isolation for thyristor-based device Grant 6,998,652 - Horch , et al. February 14, 2 | 2006-02-14 |
| Method for making a recessed thyristor control port Grant 6,979,602 - Horch , et al. December 27, 2 | 2005-12-27 |
| Thyristor-based device having a reduced-resistance contact to a buried emitter region Grant 6,980,457 - Horch , et al. December 27, 2 | 2005-12-27 |
| Thyristor-based device having dual control ports Grant 6,965,129 - Horch , et al. November 15, 2 | 2005-11-15 |
| Semiconductor device with leakage implant and method of fabrication App 20050233506 - Horch, Andrew E. ; et al. | 2005-10-20 |
| Data restore in thryistor based memory devices Grant 6,944,051 - Lee , et al. September 13, 2 | 2005-09-13 |
| Reference cells for TCCT based memory cells Grant 6,940,772 - Horch , et al. September 6, 2 | 2005-09-06 |
| Method of manufacturing a thyristor device with a control port in a trench Grant 6,913,955 - Horch , et al. July 5, 2 | 2005-07-05 |
| Self-aligned thin capacitively-coupled thyristor structure Grant 6,911,680 - Horch , et al. June 28, 2 | 2005-06-28 |
| Reference cells for TCCT based memory cells Grant 6,901,021 - Horch , et al. May 31, 2 | 2005-05-31 |
| Stability in thyristor-based memory device Grant 6,891,205 - Cho , et al. May 10, 2 | 2005-05-10 |
| Increased base-emitter capacitance Grant 6,888,177 - Nemati , et al. May 3, 2 | 2005-05-03 |
| Carrier coupler for thyristor-based semiconductor device Grant 6,872,602 - Nemati , et al. March 29, 2 | 2005-03-29 |
| Thyristor-based device with trench dielectric material Grant 6,835,997 - Horch , et al. December 28, 2 | 2004-12-28 |
| Thyristor having a first emitter with relatively lightly doped portion to the base Grant 6,828,176 - Nemati , et al. December 7, 2 | 2004-12-07 |
| Method for trench isolation for thyristor-based device Grant 6,818,482 - Horch , et al. November 16, 2 | 2004-11-16 |
| Varied trench depth for thyristor isolation Grant 6,815,734 - Horch , et al. November 9, 2 | 2004-11-09 |
| Thyristor-based device including trench isolation Grant 6,777,271 - Robins , et al. August 17, 2 | 2004-08-17 |
| Method of forming self-aligned thin capacitively-coupled thyristor structure Grant 6,767,770 - Horch , et al. July 27, 2 | 2004-07-27 |
| Carrier coupler for thyristor-based semiconductor device Grant 6,756,612 - Nemati , et al. June 29, 2 | 2004-06-29 |
| Thyristor-based device including trench dielectric isolation for thyristor-body regions Grant 6,727,528 - Robins , et al. April 27, 2 | 2004-04-27 |
| Thyristor with lightly-doped emitter Grant 6,703,646 - Nemati , et al. March 9, 2 | 2004-03-09 |
| Thyristor-based device that inhibits undesirable conductive channel formation Grant 6,690,039 - Nemati , et al. February 10, 2 | 2004-02-10 |
| Thyristor-based device over substrate surface Grant 6,690,038 - Cho , et al. February 10, 2 | 2004-02-10 |
| Thyristor-based device adapted to inhibit parasitic current Grant 6,686,612 - Horch , et al. February 3, 2 | 2004-02-03 |
| Recessed thyristor control port Grant 6,683,330 - Horch , et al. January 27, 2 | 2004-01-27 |
| Shunt connection to emitter Grant 6,666,481 - Horch , et al. December 23, 2 | 2003-12-23 |
| Thyristor-based device over substrate surface Grant 6,653,174 - Cho , et al. November 25, 2 | 2003-11-25 |
| Stability in thyristor-based memory device Grant 6,653,175 - Nemati , et al. November 25, 2 | 2003-11-25 |
| Stability in thyristor-based memory device Grant 6,462,359 - Nemati , et al. October 8, 2 | 2002-10-08 |
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