Patent | Date |
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Device isolation design rules for HAST improvement Grant 11,018,220 - Hanson , et al. May 25, 2 | 2021-05-25 |
III-nitride semiconductor structures comprising low atomic mass species Grant 10,211,294 - Roberts , et al. Feb | 2019-02-19 |
Parasitic Channel Mitigation Via Reaction With Active Species App 20190013196 - Roberts; John Claassen ;   et al. | 2019-01-10 |
Device Isolation Design Rules For Hast Improvement App 20180308927 - Hanson; Allen W. ;   et al. | 2018-10-25 |
Parasitic Channel Mitigation Via Back Side Implantation App 20180158685 - Roberts; John Claassen | 2018-06-07 |
Iii-nitride Semiconductor Structures Comprising Spatially Patterned Implanted Species App 20180122928 - Roberts; John Claassen ;   et al. | 2018-05-03 |
Parasitic Channel Mitigation Using Rare-earth Oxide And/or Rare-earth Nitride Diffusion Barrier Regions App 20180026098 - Linthicum; Kevin J. ;   et al. | 2018-01-25 |
Parasitic channel mitigation via back side implantation Grant 9,799,520 - Roberts October 24, 2 | 2017-10-24 |
III-nitride semiconductor structures comprising spatially patterned implanted species Grant 9,773,898 - Roberts , et al. September 26, 2 | 2017-09-26 |
Parasitic channel mitigation via reaction with active species Grant 9,704,705 - Roberts , et al. July 11, 2 | 2017-07-11 |
Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions Grant 9,673,281 - Linthicum , et al. June 6, 2 | 2017-06-06 |
Parasitic channel mitigation in III-nitride material semiconductor structures Grant 9,627,473 - Roberts , et al. April 18, 2 | 2017-04-18 |
Parasitic Channel Mitigation Using Rare-earth Oxide And/or Rare-earth Nitride Diffusion Barrier Regions App 20170069717 - Linthicum; Kevin J. ;   et al. | 2017-03-09 |
Parasitic Channel Mitigation Via Implantation Of Low Atomic Mass Species App 20170069742 - Roberts; John Claassen ;   et al. | 2017-03-09 |
Iii-nitride Semiconductor Structures Comprising Low Atomic Mass Species App 20170069720 - Roberts; John Claassen ;   et al. | 2017-03-09 |
Parasitic Channel Mitigation Via Reaction With Active Species App 20170069484 - Roberts; John Claassen ;   et al. | 2017-03-09 |
Parasitic Channel Mitigation Using Aluminum Nitride Diffusion Barrier Regions App 20170069716 - Roberts; John Claassen ;   et al. | 2017-03-09 |
Parasitic Channel Mitigation Via Counterdopant Profile Matching App 20170069744 - Roberts; John Claassen ;   et al. | 2017-03-09 |
Methods Of Spatially Implanting Species In Iii-nitride Semiconductor Structures App 20170069500 - Roberts; John Claassen ;   et al. | 2017-03-09 |
Iii-nitride Semiconductor Structures Comprising Spatially Patterned Implanted Species App 20170069746 - Roberts; John Claassen ;   et al. | 2017-03-09 |
Parasitic Channel Mitigation Via Back Side Implantation App 20170069743 - Roberts; John Claassen | 2017-03-09 |
Parasitic Channel Mitigation In Iii-nitride Material Semiconductor Structures App 20170069713 - Roberts; John Claassen ;   et al. | 2017-03-09 |
Gallium nitride material processing and related device structures Grant 8,343,824 - Piner , et al. January 1, 2 | 2013-01-01 |
Gallium nitride material transistors and methods associated with the same Grant 7,569,871 - Nagy , et al. August 4, 2 | 2009-08-04 |
Gallium Nitride Materials And Methods Associated With The Same App 20080200013 - Piner; Edwin Lanier ;   et al. | 2008-08-21 |
Gallium nitride material transistors and methods associated with the same Grant 7,352,016 - Nagy , et al. April 1, 2 | 2008-04-01 |
Gallium nitride materials and methods associated with the same Grant 7,352,015 - Piner , et al. April 1, 2 | 2008-04-01 |
III-nitride material structures including silicon substrates Grant 7,247,889 - Hanson , et al. July 24, 2 | 2007-07-24 |
III-nitride material structures including silicon substrates App 20060118819 - Hanson; Allen W. ;   et al. | 2006-06-08 |
Gallium nitride materials and methods associated with the same App 20050285142 - Piner, Edwin Lanier ;   et al. | 2005-12-29 |
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