Roberds; Brian

Patent Applications and Registrations

Patent applications and USPTO patent grants for Roberds; Brian.The latest application filed is for "systems and methods for facilitating remote security threat detection".

Company Profile

0.16.18

Roberds; Brian - Broken Arrow OK
Roberds; Brian - Beaverton OR
Roberds; Brian - Escondido CA
Roberds; Brian - Santa Clara CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Systems And Methods For Facilitating Remote Security Threat Detection App 20150121523 - Crowley; Raymond ; et al.	2015-04-30
Secure Real-time Business Processing Systems App 20100174648 - Krantz; Daniel W. ; et al.	2010-07-08
Transistor structure and method of fabrication Grant 6,952,040 - Chau , et al. October 4, 2	2005-10-04
Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering Grant 6,873,013 - Roberds , et al. March 29, 2	2005-03-29
Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel Grant 6,815,310 - Roberds , et al. November 9, 2	2004-11-09
Interfacial layer for gate electrode and high-k dielectric layer and methods of fabrication Grant 6,809,017 - Arghavani , et al. October 26, 2	2004-10-26
Method for bonding and debonding films using a high-temperature polymer App 20040102020 - Roberds, Brian ; et al.	2004-05-27
MOS transistor using mechanical stress to control short channel effects Grant 6,740,913 - Doyle , et al. May 25, 2	2004-05-25
Method for reduced capacitance interconnect system using gaseous implants into the ILD Grant 6,656,822 - Doyle , et al. December 2, 2	2003-12-02
Transistor structure and method of fabrication Grant 6,653,700 - Chau , et al. November 25, 2	2003-11-25
Interfacial layer for gate electrode and high-k dielectric layer and methods of fabrication App 20030211680 - Arghavani, Raza ; et al.	2003-11-13
Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering Grant 6,642,133 - Roberds , et al. November 4, 2	2003-11-04
Method for bonding and debonding films using a high-temperature polymer Grant 6,638,835 - Roberds , et al. October 28, 2	2003-10-28
Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering App 20030178680 - Roberds, Brian ; et al.	2003-09-25
Interfacial layer for gate electrode and high-k dielectric layer and methods of fabrication Grant 6,620,713 - Arghavani , et al. September 16, 2	2003-09-16
Method for bonding and debonding films using a high-temperature polymer App 20030170424 - Roberds, Brian ; et al.	2003-09-11
Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel App 20030148584 - Roberds, Brian ; et al.	2003-08-07
Interfacial layer for gate electrode and high-k dielectric layer and methods of fabrication App 20030124871 - Arghavani, Reza ; et al.	2003-07-03
Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering App 20030116812 - Roberds, Brian ; et al.	2003-06-26
Method for bonding and debonding films using a high-temperature polymer App 20030108715 - Roberds, Brian ; et al.	2003-06-12
Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel Grant 6,563,152 - Roberds , et al. May 13, 2	2003-05-13
Novel transistor structure and method of fabrication App 20030011037 - Chau, Robert S. ; et al.	2003-01-16
Novel transistor structure and method of fabrication App 20030001219 - Chau, Robert S. ; et al.	2003-01-02
Technique to produce isolated junctions by forming an insulation layer App 20020098667 - Roberds, Brian	2002-07-25
Method For Reduced Capacitance Interconnect System Using Gaseous Implants Into The Ild App 20020090791 - DOYLE, BRIAN S. ; et al.	2002-07-11
Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel App 20020086472 - Roberds, Brian ; et al.	2002-07-04
Technique To Produce Isolated Junctions By Forming An Insulation Layer App 20020086510 - Roberds, Brian	2002-07-04
Methodology for control of short channel effects in MOS transistors App 20020074598 - Doyle, Brian S. ; et al.	2002-06-20
Technique to produce isolated junctions by forming an insulation layer Grant 6,399,973 - Roberds June 4, 2	2002-06-04
Methodology for control of short channel effects in MOS transistors Grant 6,362,082 - Doyle , et al. March 26, 2	2002-03-26
Technique to obtain increased channel mobilities in NMOS transistors by gate electrode engineering Grant 6,281,532 - Doyle , et al. August 28, 2	2001-08-28
Integrated circuit with dynamic threshold voltage App 20010014494 - Doyle, Brian S. ; et al.	2001-08-16
Integrated circuit with dynamic threshold voltage Grant 6,261,878 - Doyle , et al. July 17, 2	2001-07-17
Method of increasing the mobility of MOS transistors by use of localized stress regions Grant 6,228,694 - Doyle , et al. May 8, 2	2001-05-08

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