Ristow; Dietrich
Patent Applications and Registrations
Patent applications and USPTO patent grants for Ristow; Dietrich.The latest application filed is for "method for manufacturing a field effect transistor using an auxiliary layer deposited at a very flat incident angle".
- Ristow; Dietrich - Neubiberg DE
| Patent | Date |
|---|---|
| Method for manufacturing a field effect transistor using an auxiliary layer deposited at a very flat incident angle Grant 5,960,269 - Ristow , et al. September 28, 1 | 1999-09-28 |
| Method for manufacturing a field effect transistor Grant 5,298,444 - Ristow March 29, 1 | 1994-03-29 |
| Metal-semiconductor-field effect transistor (MESFET) with lightly doped drain contact region for higher voltage breakdown Grant 4,425,573 - Ristow January 10, 1 | 1984-01-10 |
| Method of making a MESFET having same type conductivity for source, drain, and gate regions Grant 4,325,747 - Ristow April 20, 1 | 1982-04-20 |
| Production of electrical components, particularly RC networks Grant 3,913,224 - Preissinger , et al. October 21, 1 | 1975-10-21 |
| Electrical Capacitors And Method Of Making Same Grant 3,857,074 - Heywang , et al. December 24, 1 | 1974-12-24 |
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