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name:-0.01306414604187
name:-0.014203071594238
name:-0.0040059089660645
RIDEAU; Denis Patent Filings

RIDEAU; Denis

Patent Applications and Registrations

Patent applications and USPTO patent grants for RIDEAU; Denis.The latest application filed is for "integrated circuit comprising a single photon avalanche diode and corresponding manufacturing method".

Company Profile
4.12.17
  • RIDEAU; Denis - Grenoble FR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Integrated Circuit Comprising A Single Photon Avalanche Diode And Corresponding Manufacturing Method
App 20220190184 - RIDEAU; Denis ;   et al.
2022-06-16
Image sensor
Grant 11,049,892 - Crocherie , et al. June 29, 2
2021-06-29
Image sensor
Grant 10,903,259 - Rideau , et al. January 26, 2
2021-01-26
Single-photon Avalanche Photodiode
App 20200203547 - BENHAMMOU; Younes ;   et al.
2020-06-25
Image Sensor
App 20200013812 - Crocherie; Axel ;   et al.
2020-01-09
Image Sensor
App 20200013820 - Rideau; Denis ;   et al.
2020-01-09
Method of forming stressed semiconductor layer
Grant 9,543,214 - Rideau , et al. January 10, 2
2017-01-10
Process for fabricating SOI transistors for an increased integration density
Grant 9,514,996 - Andrieu , et al. December 6, 2
2016-12-06
Process For Fabricating Soi Transistors For An Increased Integration Density
App 20160307809 - ANDRIEU; Francois ;   et al.
2016-10-20
PMOS transistor with improved mobility of the carriers
Grant 9,356,090 - Fiori , et al. May 31, 2
2016-05-31
Method of locally stressing a semiconductor layer
Grant 9,331,175 - Morin , et al. May 3, 2
2016-05-03
Method of stressing a semiconductor layer
Grant 9,318,372 - Nier , et al. April 19, 2
2016-04-19
Method For Relaxing The Transverse Mechanical Stresses Within The Active Region Of A Mos Transistor, And Corresponding Integrated Circuit
App 20160099183 - Rideau; Denis ;   et al.
2016-04-07
Method of forming stressed SOI layer
Grant 9,305,828 - Rideau , et al. April 5, 2
2016-04-05
Method of introducing local stress in a semiconductor layer
Grant 9,240,466 - Morin , et al. January 19, 2
2016-01-19
Pmos Transistor With Improved Mobility Of The Carriers
App 20150311277 - Fiori; Vincent ;   et al.
2015-10-29
Method Of Stressing A Semiconductor Layer
App 20150118823 - Nier; Olivier ;   et al.
2015-04-30
Method Of Forming Stressed Soi Layer
App 20150118824 - Rideau; Denis ;   et al.
2015-04-30
Method Of Forming Stressed Semiconductor Layer
App 20150118805 - Rideau; Denis ;   et al.
2015-04-30
Method For Relaxing The Transverse Mechanical Stresses Within The Active Region Of A Mos Transistor, And Corresponding Integrated Circuit
App 20150097241 - Rideau; Denis ;   et al.
2015-04-09
Method Of Locally Stressing A Semiconductor Layer
App 20150044827 - Morin; Pierre ;   et al.
2015-02-12
Method Of Introducing Local Stress In A Semiconductor Layer
App 20150044826 - Morin; Pierre ;   et al.
2015-02-12
Metal oxide semiconductor (MOS) device with locally thickened gate oxide
Grant 8,928,051 - Dornel , et al. January 6, 2
2015-01-06
Metal oxide semiconductor (MOS) device with locally thickened gate oxide
Grant 8,741,704 - Dornel , et al. June 3, 2
2014-06-03
Metal Oxide Semiconductor (mos) Device With Locally Thickened Gate Oxide
App 20140070331 - Dornel; Erwan ;   et al.
2014-03-13
Metal Oxide Semiconductor (mos) Device With Locally Thickened Gate Oxide
App 20130234218 - Dornel; Erwan ;   et al.
2013-09-12
Semiconductor Device and Method Making Same
App 20110303990 - Dornel; Erwan ;   et al.
2011-12-15

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