Patent | Date |
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Electronic device including at least one nano-object Grant 11,450,755 - Reboh , et al. September 20, 2 | 2022-09-20 |
Method For Modifying A Strain State Of At Least One Semiconductor Layer App 20220293414 - REBOH; Shay ;   et al. | 2022-09-15 |
Method For Direct Hydrophilic Bonding Of Substrates App 20220223467 - REBOH; Shay ;   et al. | 2022-07-14 |
Rf Substrate Structure And Method Of Production App 20220189994 - Augendre; Emmanuel ;   et al. | 2022-06-16 |
Low-temperature Method For Manufacturing A Semiconductor-on-insulator Substrate App 20220172984 - Reboh; Shay ;   et al. | 2022-06-02 |
Semiconductor Substrate Polishing Method App 20220157612 - Reboh; Shay ;   et al. | 2022-05-19 |
Method For Fabricating A Doped Region Of A Microelectronic Device App 20220157970 - Reboh; Shay | 2022-05-19 |
Method Of Manufacturing A Doped Area Of A Microelectronic Device App 20220157608 - REBOH; Shay | 2022-05-19 |
Method Of Manufacturing A Doped Area Of A Microelectronic Device App 20220077310 - REBOH; Shay ;   et al. | 2022-03-10 |
Method For Germanium Enrichment Around The Channel Of A Transistor App 20220068638 - NIEBOJEWSKI; Heimanu ;   et al. | 2022-03-03 |
Method for fabricating an integrated circuit including a NMOS transistor and a PMOS transistor Grant 11,217,446 - Posseme , et al. January 4, 2 | 2022-01-04 |
Transistor with superposed bars and double-gate structure Grant 11,177,371 - Coquand , et al. November 16, 2 | 2021-11-16 |
Method For Making Superimposed Transistors App 20210328014 - REBOH; Shay ;   et al. | 2021-10-21 |
Low-temperature Method For Transfer And Healing Of A Semiconductor Layer App 20210305097 - REBOH; Shay | 2021-09-30 |
Method of manufacturing a field effect transistor with optimized performances Grant 11,121,231 - Reboh September 14, 2 | 2021-09-14 |
Creation Of Stress In The Channel Of A Nanosheet Transistor App 20210257450 - Loubet; Nicolas ;   et al. | 2021-08-19 |
Method of fabrication of a semiconductor device including one or more nanostructures Grant 11,088,247 - Reboh , et al. August 10, 2 | 2021-08-10 |
Method for making superimposed transistors Grant 11,081,547 - Reboh , et al. August 3, 2 | 2021-08-03 |
Method of manufacturing of a field effect transistor having a junction aligned with spacers Grant 11,062,951 - Reboh July 13, 2 | 2021-07-13 |
Multilayer Stack Of Semiconductor-on-insulator Type, Associated Production Process, And Radio Frequency Module Comprising It App 20210210377 - REBOH; Shay ;   et al. | 2021-07-08 |
Method Of Forming A Porous Portion In A Substrate App 20210210357 - REBOH; Shay ;   et al. | 2021-07-08 |
Substrates Including Useful Layers App 20210202302 - Landru; Didier ;   et al. | 2021-07-01 |
Creation of stress in the channel of a nanosheet transistor Grant 11,049,933 - Loubet , et al. June 29, 2 | 2021-06-29 |
Manufacturing Process Of An Rf-soi Trapping Layer Substrate Resulting From A Crystalline Transformation Of A Buried Layer App 20210183690 - REBOH; Shay ;   et al. | 2021-06-17 |
Method For Modifying The Strain State Of A Block Of A Semiconducting Material App 20210098265 - MAITREJEAN; Sylvain ;   et al. | 2021-04-01 |
Method for transferring a useful layer Grant 10,950,491 - Landru , et al. March 16, 2 | 2021-03-16 |
Method Of Healing An Implanted Layer Comprising A Heat Treatment Prior To Recrystallisation By Laser Annealing App 20210057267 - ACOSTA ALBA; Pablo ;   et al. | 2021-02-25 |
Creation Of Stress In The Channel Of A Nanosheet Transistor App 20210020743 - Loubet; Nicolas ;   et al. | 2021-01-21 |
Field effect transistor with reduced contact resistance Grant 10,896,956 - Coquand , et al. January 19, 2 | 2021-01-19 |
Method For Producing At Least One Device In Compressive Strained Semiconductor App 20210005443 - GABEN; Loic ;   et al. | 2021-01-07 |
Method for modifying the strain state of a block of a semiconducting material Grant 10,879,083 - Maitrejean , et al. December 29, 2 | 2020-12-29 |
Method for fabricating a field-effect transistor Grant 10,818,775 - Reboh , et al. October 27, 2 | 2020-10-27 |
Electronic Device Including At Least One Nano-object App 20200321452 - REBOH; Shay ;   et al. | 2020-10-08 |
Method of manufacturing at least one field effect transistor having epitaxially grown electrodes Grant 10,727,320 - Reboh , et al. | 2020-07-28 |
Method Of Manufacturing A Field Effect Transistor With Optimized Performances App 20200235226 - REBOH; Shay | 2020-07-23 |
Optimizing junctions of gate all around structures with channel pull back Grant 10,714,392 - Loubet , et al. | 2020-07-14 |
Method For Layer Transfer With Localised Reduction Of A Capacity To Initiate A Fracture App 20200219762 - Reboh; Shay ;   et al. | 2020-07-09 |
Method Of Fabrication Of A Semiconductor Device Including One Or More Nanostructures App 20200212179 - REBOH; Shay ;   et al. | 2020-07-02 |
Method For Fabricating An Integrated Circuit Including A Nmos Transistor And A Pmos Transistor App 20200203161 - POSSEME; Nicolas ;   et al. | 2020-06-25 |
Method Of Fabricating A Semiconductor Substrate Having A Stressed Semiconductor Region App 20200194273 - REBOH; Shay ;   et al. | 2020-06-18 |
Method Of Manufacturing Of A Field Effect Transistor Having A Junction Aligned With Spacers App 20200161186 - REBOH; Shay | 2020-05-21 |
Structure With Superimposed Semiconductor Bars Having A Uniform Semiconductor Casing App 20200111872 - REBOH; Shay ;   et al. | 2020-04-09 |
Method For Making Superimposed Transistors App 20200098859 - Reboh; Shay ;   et al. | 2020-03-26 |
Method for fabricating a device with a tensile-strained NMOS transistor and a uniaxial compression strained PMOS transistor Grant 10,600,786 - Maitrejean , et al. | 2020-03-24 |
Transistor With Superposed Bars And Double-gate Structure App 20200058768 - COQUAND; Remi ;   et al. | 2020-02-20 |
Method for forming doped extension regions in a structure having superimposed nanowires Grant 10,553,723 - Coquand , et al. Fe | 2020-02-04 |
Optimizing Junctions of Gate All Around Structures with Channel Pull Back App 20200027791 - Loubet; Nicolas ;   et al. | 2020-01-23 |
Method for making a semiconductor device with a compressive stressed channel Grant 10,431,683 - Reboh , et al. O | 2019-10-01 |
Method For Transferring A Useful Layer App 20190221471 - Landru; Didier ;   et al. | 2019-07-18 |
Method to increase strain in a semiconductor region for forming a channel of the transistor Grant 10,347,721 - Reboh , et al. July 9, 2 | 2019-07-09 |
Method For Fabricating Of At Least A Field-effect Transistor App 20190207016 - REBOH; Shay ;   et al. | 2019-07-04 |
Method Of Fabrication Of A Semiconductor Device Including One Or More Nanostructures App 20190198614 - REBOH; Shay ;   et al. | 2019-06-27 |
Field Effect Transistor With Reduced Contact Resistance App 20190198616 - COQUAND; Remi ;   et al. | 2019-06-27 |
Method For Fabricating A Field-effect Transistor App 20190157422 - REBOH; Shay ;   et al. | 2019-05-23 |
Method for producing a semiconductor device with self-aligned internal spacers Grant 10,269,930 - Reboh , et al. | 2019-04-23 |
Method of fabricating a FET transistor having a strained channel Grant 10,263,077 - Reboh , et al. | 2019-04-16 |
Method for fabricating a field effect transistor having a surrounding grid Grant 10,256,102 - Coquand , et al. | 2019-04-09 |
Method for making a semiconductor device with self-aligned inner spacers Grant 10,217,842 - Reboh , et al. Feb | 2019-02-26 |
Method for making a semiconductor device with nanowire and aligned external and internal spacers Grant 10,217,849 - Barraud , et al. Feb | 2019-02-26 |
Method For Forming Doped Extension Regions In A Structure Having Superimposed Nanowires App 20190051744 - Coquand; Remi ;   et al. | 2019-02-14 |
Method of fabrication of a semiconductor substrate having at least a tensilely strained semiconductor portion Grant 10,205,021 - Reboh Feb | 2019-02-12 |
Method of making a transistor having a source and a drain obtained by recrystallization of semiconductor Grant 10,170,621 - Reboh , et al. J | 2019-01-01 |
Enhanced method of stressing a transistor channel zone Grant 10,147,818 - Reboh , et al. De | 2018-12-04 |
Process for fabricating a field effect transistor having a coating gate Grant 10,147,788 - Augendre , et al. De | 2018-12-04 |
Method of producing a channel structure formed from a plurality of strained semiconductor bars Grant 10,141,424 - Coquand , et al. Nov | 2018-11-27 |
Method for fabricating a transistor having a vertical channel having nano layers Grant 10,134,875 - Reboh , et al. November 20, 2 | 2018-11-20 |
Method Of Eliminating Faults In A Semiconductor Film Comprising The Formation Of A Hydrogen Trapping Layer App 20180315644 - TAUZIN; Aurelie ;   et al. | 2018-11-01 |
Manufacturing of silicon strained in tension on insulator by amorphisation then recrystallisation Grant 10,115,590 - Reboh , et al. October 30, 2 | 2018-10-30 |
Process for fabricating a field effect transistor having a coating gate Grant 10,109,735 - Coquand , et al. October 23, 2 | 2018-10-23 |
Method For Fabricating A Field Effect Transistor Having A Surrounding Grid App 20180301341 - COQUAND; Remi ;   et al. | 2018-10-18 |
Process for fabricating a vertical-channel nanolayer transistor Grant 10,096,694 - Coquand , et al. October 9, 2 | 2018-10-09 |
Method For Fabricating A Transistor Having A Vertical Channel Having Nano Layers App 20180204931 - REBOH; Shay ;   et al. | 2018-07-19 |
Method for patterning a thin film Grant 10,014,183 - Reboh , et al. July 3, 2 | 2018-07-03 |
Process For Fabricating A Field Effect Transistor Having A Coating Gate App 20180182893 - COQUAND; Remi ;   et al. | 2018-06-28 |
Method For Making A Semiconductor Device With Nanowire And Aligned External And Internal Spacers App 20180175163 - BARRAUD; Sylvain ;   et al. | 2018-06-21 |
Method For Making A Semiconductor Device With Self-aligned Inner Spacers App 20180175167 - REBOH; Shay ;   et al. | 2018-06-21 |
Method For Producing A Semiconductor Device With Self-aligned Internal Spacers App 20180175166 - Reboh; Shay ;   et al. | 2018-06-21 |
Method For Making A Semiconductor Device With A Compressive Stressed Channel App 20180175194 - Reboh; Shay ;   et al. | 2018-06-21 |
Method for doping source and drain regions of a transistor by means of selective amorphisation Grant 9,966,453 - Reboh , et al. May 8, 2 | 2018-05-08 |
Process For Fabricating A Field Effect Transistor Having A Coating Gate App 20180108733 - Augendre; Emmanuel ;   et al. | 2018-04-19 |
Method of fabricating a transistor channel structure with uniaxial strain Grant 9,935,019 - Reboh , et al. April 3, 2 | 2018-04-03 |
Method To Increase Strain In A Semiconductor Region For Forming A Channel Of The Transistor App 20180082837 - REBOH; Shay ;   et al. | 2018-03-22 |
Method for producing a strained semiconductor on insulator substrate Grant 9,899,217 - Reboh , et al. February 20, 2 | 2018-02-20 |
Method for making a transistor in a stack of superimposed semiconductor layers Grant 9,876,121 - Barraud , et al. January 23, 2 | 2018-01-23 |
Method For Patterning A Thin Film App 20170358459 - REBOH; Shay ;   et al. | 2017-12-14 |
Method Of Producing A Channel Structure Formed From A Plurality Of Strained Semiconductor Bars App 20170345915 - COQUAND; Remi ;   et al. | 2017-11-30 |
Method Of Making A Transistor Having A Source And A Drain Obtained By Recrystallization Of Semiconductor App 20170345931 - REBOH; Shay ;   et al. | 2017-11-30 |
Method Of Fabricating A Transistor With Nano-layers Having A Vertical Channel App 20170330958 - COQUAND; Remi ;   et al. | 2017-11-16 |
Manufacturing Of Silicon Strained In Tension On Insulator By Amorphisation Then Recrystallisation App 20170309483 - REBOH; Shay ;   et al. | 2017-10-26 |
Method For Fabricating A Device With A Tensile-strained Nmos Transistor And A Uniaxial Compression Strained Pmos Transistor App 20170263607 - MAITREJEAN; Sylvain ;   et al. | 2017-09-14 |
Method for producing strained semi-conductor blocks on the insulating layer of a semi-conductor on insulator substrate Grant 9,761,607 - Reboh , et al. September 12, 2 | 2017-09-12 |
Method for causing tensile strain in a semiconductor film Grant 9,704,709 - Augendre , et al. July 11, 2 | 2017-07-11 |
Method Of Fabricating A Transistor Channel Structure With Uniaxial Strain App 20170076997 - REBOH; Shay ;   et al. | 2017-03-16 |
Method For Causing Tensile Strain In A Semiconductor Film App 20170076944 - AUGENDRE; Emmanuel ;   et al. | 2017-03-16 |
Local strain generation in an SOI substrate Grant 9,502,558 - Reboh , et al. November 22, 2 | 2016-11-22 |
Method For Doping Source And Drain Regions Of A Transistor By Means Of Selective Amorphisation App 20160300927 - REBOH; Shay ;   et al. | 2016-10-13 |
Method For Making A Transistor In A Stack Of Superimposed Semiconductor Layers App 20160276494 - BARRAUD; Sylvain ;   et al. | 2016-09-22 |
Enhanced method of introducing a stress in a transistor channel by means of sacrificial sources/drain regions and gate replacement Grant 9,431,538 - Reboh , et al. August 30, 2 | 2016-08-30 |
Method To Introduce Stress In A Channel Of A Transistor Using Sacrificial Sources And Drain Region And Gate Replacement App 20160149037 - REBOH; Shay ;   et al. | 2016-05-26 |
Method For Stress Control In A Channel Region Of A Transistor App 20160149039 - REBOH; Shay ;   et al. | 2016-05-26 |
Method for manufacturing a transistor in which the strain applied to the channel is increased Grant 9,343,375 - Batude , et al. May 17, 2 | 2016-05-17 |
Recrystallization of source and drain blocks from above Grant 9,246,006 - Batude , et al. January 26, 2 | 2016-01-26 |
Method To Fabricate A Transistor Wherein The Level Of Strain Applied To The Channel Is Enhanced App 20160020153 - BATUDE; Perrine ;   et al. | 2016-01-21 |
Generation Of Localized Strain In A Soi Substrate App 20160005862 - REBOH; Shay ;   et al. | 2016-01-07 |
Method For Producing Strained Semi-conductor Blocks On The Insulating Layer Of A Semi-conductor On Insulator Substrate App 20150179665 - REBOH; Shay ;   et al. | 2015-06-25 |
Method For Modifying The Strain State Of A Block Of A Semiconducting Material App 20150179474 - MAITREJEAN; Sylvain ;   et al. | 2015-06-25 |
Method Of Fabricating A Semiconductor Substrate On Insulator App 20150155170 - REBOH; Shay ;   et al. | 2015-06-04 |