Rebane; Yury Toomasovich

Patent Applications and Registrations

Patent applications and USPTO patent grants for Rebane; Yury Toomasovich.The latest application filed is for "method of separating surface layer of semiconductor crystal using a laser beam perpendicular to the separating plane".

Company Profile

4.14.13

Rebane; Yury Toomasovich - Saint-Petersburg RU
Rebane; Yury Toomasovich - St Petersburg RU
Rebane; Yury Toomasovich - 194214 St Petersburg RU

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of separating surface layer of semiconductor crystal using a laser beam perpendicular to the separating plane Grant 11,103,960 - Shreter , et al. August 31, 2	2021-08-31
Method of separating surface layer of semiconductor crystal using a laser beam perpendicular to the separating plane Grant 10,828,727 - Shreter , et al. November 10, 2	2020-11-10
Method of Separating Surface Layer of Semiconductor Crystal Using a Laser Beam Perpendicular to the Separating Plane App 20190160598 - Shreter; Yury Georgievich ; et al.	2019-05-30
Method of laser separation of the epitaxial film or the epitaxial film layer from the growth substrate of the epitaxial semiconductor structure (variations) Grant 9,966,296 - Shreter , et al. May 8, 2	2018-05-08
Semiconductor light-emitting device with an axis of symmetry Grant 9,948,065 - Shreter , et al. April 17, 2	2018-04-17
Semiconductor Light-emitting Device With An Axis Of Symmetry App 20170110853 - Shreter; Yury Georgievich ; et al.	2017-04-20
Method of laser separation of the epitaxial film or the epitaxial film layer from the growth substrate of the epitaxial semiconductor structure (variations) App 20160172228 - Shreter; Yury Georgievich ; et al.	2016-06-16
Method of laser separation of the epitaxial film or of the epitaxial film layer from the growth substrate of the epitaxial semiconductor structure (variations) Grant 9,337,025 - Shreter , et al. May 10, 2	2016-05-10
Light emitting semiconductor device Grant 7,265,374 - Lee , et al. September 4, 2	2007-09-04
Light emitting diode with diffraction lattice App 20070057266 - Wang; Pei-Jih ; et al.	2007-03-15
Chemical vapor deposition reactor App 20060288933 - Lee; Stephen Sen-Tien ; et al.	2006-12-28
Light emitting semiconductor device App 20060278880 - Lee; Stephen ; et al.	2006-12-14
Semiconductor laser based on matrix, array or single triangle optical cavity with spatially distributed current injection Grant 7,023,892 - Wang , et al. April 4, 2	2006-04-04
Chemical vapor deposition reactor Grant 7,011,711 - Shreter , et al. March 14, 2	2006-03-14
Light emitting diode with diffraction lattice App 20060043398 - Wang; Pei-Jih ; et al.	2006-03-02
Vertical cavity surface emitting semiconductor laser with triangle prism optical cavity resonator Grant 6,924,511 - Wang , et al. August 2, 2	2005-08-02
Vertical cavity surface emitting semiconductor laser with triangle prism optical cavity resonator App 20040217381 - Wang, Wang Nang ; et al.	2004-11-04
Chemical vapor deposition reactor App 20040129213 - Shreter, Yury Georgievich ; et al.	2004-07-08
Semiconductor laser based on matrix, array or single triangle optical cavity with spatially distributed current injection App 20030123509 - Wang, Wang Nang ; et al.	2003-07-03

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