Ranade; Rajiv

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ranade; Rajiv.The latest application filed is for "method to fill deep trench structures with void-free polysilicon or silicon".

Company Profile

0.6.3

Ranade; Rajiv - Brewster NY
Ranade; Rajiv - Beacon NY
Ranade; Rajiv - Fishkill NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for dry etching deep trenches in a substrate Grant 6,821,900 - Athavale , et al. November 23, 2	2004-11-23
Method to fill deep trench structures with void-free polysilicon or silicon Grant 6,809,005 - Ranade , et al. October 26, 2	2004-10-26
Method To Fill Deep Trench Structures With Void-free Polysilicon Or Silicon App 20040180510 - Ranade, Rajiv ; et al.	2004-09-16
Circuit with buried strap including liner Grant 6,768,155 - JaiPrakash , et al. July 27, 2	2004-07-27
Circuit with buried strap including liner App 20040000683 - JaiPrakash, Venkatachalam C. ; et al.	2004-01-01
Method of manufacturing circuit with buried strap including a liner Grant 6,605,504 - JaiPrakash , et al. August 12, 2	2003-08-12
Method of deep trench formation with improved profile control and surface area Grant 6,544,838 - Ranade , et al. April 8, 2	2003-04-08
Method of deep trench formation with improved profile control and surface area App 20020132422 - Ranade, Rajiv ; et al.	2002-09-19
Method of forming deep trench capacitors Grant 6,103,585 - Michaelis , et al. August 15, 2	2000-08-15

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